Cited by 19Ferroelectric and Piezoelectric MaterialsFerroelectric and Negative Capacitance DevicesDielectric materials and actuators

Enhancement of Energy Storage Density and Efficiency of PbHfO3 Doped with La Antiferroelectric Thin Films

Hu, Jia, Li, Wenhua, Tang, Xingui, Shen, Zhihao, Wang, Kaiyuan, Zhang, Yansong, Zhang, Siyuan, Jiang, Yanping +1 more·2023·ACS Applied Energy Materials

Abstract

Antiferroelectric materials are widely used in industry owing to their outstanding energy storage properties, excellent fatigue resistance, and satisfactory stability. In this study, Pb 1–3 x /2 La x HfO 3 (abbreviated as PLH- x ) antiferroelectric nanofilms were fabricated using the sol–gel method, and their microstructure, antiferroelectric, and energy storage properties were investigated. The PLH- x films exhibited an orthogonal perovskite structure and good crystallinity. La doping altered the long-range ordering of the film’s lattice structure, generating higher breakdown field strengths and finer hysteresis lines. The PLH-0.01 film showed the best energy storage performance with a recoverable energy density ( W rec ) of 26.74 J/cm 3 and an energy storage efficiency (η) of 68.35%. After 10 8 test cycles, W rec and η decreased by only 3.6 and 2.3%, respectively, demonstrating the outstanding fatigue resistance and stability of the PLH-0.01 film. Moreover, the PLH-0.01 film exhibited good temperature stability and excellent frequency stability. Thus, the energy storage and fatigue characteristics of PLH- x films were considerably improved through La doping. These remarkable improvements confirm the potential of using the PLH- x films for preparing dielectric capacitors.

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Crossref · 10.1021/acsaem.2c02584

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Authors
Hu, J., Li, W., Tang, X., Shen, Z., Wang, K., Zhang, Y., Zhang, S., Jiang, Y., & Guo, X.
Affiliations
  • Guangdong University of Technology (CN)
  • School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou510006, People’s Republic of China
Venue
ACS Applied Energy Materials
Published
2022-12-20
Volume
6
Issue
1
Pages
120-126
ISSN
2574-0962 (ISSN-L)
OpenAlex
W4313447214
Cited by
19
References
54
Citations by year
2026: 2 · 2025: 7 · 2024: 8 · 2023: 2
FWCI
1.14
Type
journal article
Language
en
Open access
closed
Locations
ACS Applied Energy Materials (publishedVersion)
Funders
  • Guangdong Science and Technology Department (2021A1515012607)
  • National Natural Science Foundation of China (11904056, 12172093, 51604087)
  • Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University (EFMDN2021003Z)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Engineering › Biomedical Engineering › Dielectric materials and actuators
Keywords
PbHfO3, lanthanum doping, antiferroelectric thin films, energy storage density, energy storage efficiency, fatigue resistance, dielectric strength, hysteresis, perovskite structure, dielectric capacitors, temperature stability, frequency stability, sol-gel thin films

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