Surface-Dominated HfO2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing

Kwon, Jae Uk; Song, Young Geun; Kim, Ji Eun; Chun, Suk Yeop; Kim, Gu Hyun; Noh, Gichang; Kwak, Joon Young; Hur, Sunghoon; Kang, Chong-Yun; Jeong, Doo Seok; Oh, Soong Ju; Yoon, Jung Ho

doi:10.1021/acsami.2c12247

Cited by 44Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices

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Surface-Dominated HfO2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing

Kwon, Jae Uk, Song, Young Geun, Kim, Ji Eun, Chun, Suk Yeop, Kim, Gu Hyun, Noh, Gichang, Kwak, Joon Young, Hur, Sunghoon, Kang, Chong-Yun, Jeong, Doo Seok, Oh, Soong Ju, Yoon, Jung Ho·2022·ACS Applied Materials & Interfaces

DOI 10.1021/acsami.2c12247

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Abstract

The switching characteristics and performance of oxide-based memristors are predominately determined by oxygen- or oxygen-vacancy-mediated redox reactions and the consequent formation of conducting filaments (CFs). Devices using oxide thin films as the switching layer usually require an electroforming process for subsequent switching operations, which induces large device-to-device variations. In addition, the hard-to-control redox reaction during repeated switching causes random fluctuations or degradation of each resistance state, hindering reliable switching operations. In this study, an HfO 2 nanorod (NR)-based memristor is proposed for simultaneously achieving highly uniform, electroforming-free, fast, and reliable analogue switching properties. The well-controlled redox reaction due to the easy gas exchange with the environment at the surface of the NRs enhances the generation of oxygen or oxygen vacancies during the switching operation, resulting in electroforming-free and reliable switching behavior. In addition, the one-dimensional surface growth of CFs facilitates highly linear conductance modulation with smaller conductance changes compared with the two-dimensional volume growth in thin-film-based memristors, resulting in a high accuracy of >92% in the Modified National Institute of Standards and Technology pattern-recognition test and desirable spike-timing-dependent plasticity.

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The lower accuracy is due to non-ideal linearity characteristics and conductance variation of the analog states.
“This is due to the non‐ideal linearity characteristics and the conductance variation of the analog states.[ 39 ]”
From Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware (2023) · cites this paper as [39]

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Authors: Kwon, J. U., Song, Y. G., Kim, J. E., Chun, S. Y., Kim, G. H., Noh, G., Kwak, J. Y., Hur, S., Kang, C.-Y., Jeong, D. S., Oh, S. J., & Yoon, J. H.
Affiliations: Korea University (KR)
Korea Institute of Science and Technology (KR)
Hanyang University (KR)
Corresponding author: Yoon, Jung Ho
ORCID: Kwon, Jae Uk
Song, Young Geun
Kim, Ji Eun
Noh, Gichang
Kwak, Joon Young
Hur, Sunghoon
Kang, Chong-Yun
Jeong, Doo Seok
Oh, Soong Ju
Yoon, Jung Ho
Venue: ACS Applied Materials & Interfaces
Publisher: American Chemical Society (ACS)
Published: 2022-09-23
Volume: 14
Issue: 39
Pages: 44550-44560
ISSN: 1944-8244 (ISSN-L)
1944-8252
DOI: 10.1021/acsami.2c12247
OpenAlex: W4296798140
Cited by: 44
References: 43
Citations by year: 2026: 11 · 2025: 12 · 2024: 8 · 2023: 11 · 2022: 2
FWCI: 2.26
Type: journal article
Language: en
Open access: closed
Licence: doi.org/10.15223/policy-029 (stm-asf)
doi.org/10.15223/policy-037 (stm-asf)
doi.org/10.15223/policy-045 (stm-asf)
Locations: ACS Applied Materials & Interfaces (publishedVersion)
PubMed (publishedVersion)
Funders: National Research Foundation of Korea (NRF-2021M3F3A2A01037738, NRF-2022R1C1C1004176)
Korea Institute of Science and Technology (2E31771, 2V09333)
Topics: Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords: memristors, electroforming-free switching, oxygen vacancies, conductive filaments, neuromorphic computing, spike-timing-dependent plasticity, pattern recognition, oxide thin films

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Surface-Dominated HfO2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing

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