The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
Light-Gated Memristor with Integrated Logic and Memory Functions
Abstract
Memristive devices are able to store and process information, which offers several key advantages over the transistor-based architectures. However, most of the two-terminal memristive devices have fixed functions once made and cannot be reconfigured for other situations. Here, we propose and demonstrate a memristive device "memlogic" (memory logic) as a nonvolatile switch of logic operations integrated with memory function in a single light-gated memristor. Based on nonvolatile light-modulated memristive switching behavior, a single memlogic cell is able to achieve optical and electrical mixed basic Boolean logic of reconfigurable "AND", "OR", and "NOT" operations. Furthermore, the single memlogic cell is also capable of functioning as an optical adder and digital-to-analog converter. All the memlogic outputs are memristive for in situ data storage due to the nonvolatile resistive switching and persistent photoconductivity effects. Thus, as a memdevice, the memlogic has potential for not only simplifying the programmable logic circuits but also building memristive multifunctional optoelectronics.
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Cites
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Memristive devices and systems
Chua, L. O., & Kang, S. M. (1976) · Proceedings of the IEEE · doi:10.1109/proc.1976.10092 · Cited by 2,604
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Borghetti, J., Snider, G. S., Kuekes, P. J., Yang, J. J., Stewart, D. R., & Williams, R. S. (2010) · Nature · doi:10.1038/nature08940 · Cited by 1,929
Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
Xia, Q., Robinett, W., Cumbie, M. W., Banerjee, N., Cardinali, T. J., Yang, J. J., Wu, W., Li, X., Tong, W. M., Strukov, D. B., et al. (2009) · Nano Letters · doi:10.1021/nl901874j · Cited by 671
Cited by
An Oxide Schottky Junction Artificial Optoelectronic Synapse
Gao, S., Liu, G., Yang, H., Hu, C., Chen, Q., Gong, G., Xue, W., Yi, X., Shang, J., & Li, R.-W. (2019) · ACS Nano · doi:10.1021/acsnano.9b00340 · Cited by 494
Self-citationThe Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
Wang, Y., Lv, Z., Liao, Q., Shan, H., Chen, J., Zhou, Y., Zhou, L., Chen, X., Roy, V. A. L., Wang, Z., et al. (2018) · Advanced Materials · doi:10.1002/adma.201800327 · Cited by 334
Metadata
- Authors
- Tan, H., Liu, G., Yang, H., Yi, X., Pan, L., Shang, J., Long, S., Liu, M., Wu, Y., & Li, R.-W.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2017-10-18
- Volume
- 11
- Issue
- 11
- Pages
- 11298-11305
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2761987713
- Cited by
- 242
- References
- 6
- FWCI
- 8.50
- Type
- journal article
- Language
- en
- Open access
- closed
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