Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
Abstract
Hybrid reconfigurable logic circuits were fabricated by integrating memristor-based crossbars onto a foundry-built CMOS (complementary metal-oxide-semiconductor) platform using nanoimprint lithography, as well as materials and processes that were compatible with the CMOS. Titanium dioxide thin-film memristors served as the configuration bits and switches in a data routing network and were connected to gate-level CMOS components that acted as logic elements, in a manner similar to a field programmable gate array. We analyzed the chips using a purpose-built testing system, and demonstrated the ability to configure individual devices, use them to wire up various logic gates and a flip-flop, and then reconfigure devices.
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Memristors are promising candidates for future high-density nonvolatile memories because of demonstrated high endurance, electroforming-free operation, CMOS compatibility, and integrability in high-density cross-bar arrays.
“Memristors are promising candidates for future high-density nonvolatile memories given their demonstrated desirable properties such as high endurance [4,5], electroforming-free operation [4], compatibility with complementary metal-oxide-semiconductor (CMOS) processes [6], and the ability to be integrated in high-density cross-bar arrays [7,8].”
From Sub-nanosecond switching of a tantalum oxide memristor (2011) · cites this paper as [6]
Memristors can be used to implement digital logic, synapses in neural applications, and hybrid circuits.
“They can also be used to implement digital logic [9], synapses in neural applications [10,11], and hybrid circuits [6,12].”
From Sub-nanosecond switching of a tantalum oxide memristor (2011) · cites this paper as [6]
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Photonics for Neuromorphic Computing: Fundamentals, Devices, and Opportunities
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Memristive devices based on emerging two-dimensional materials beyond graphene
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Non–zero-crossing current-voltage hysteresis behavior in memristive system
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- Authors
- Xia, Q., Robinett, W., Cumbie, M. W., Banerjee, N., Cardinali, T. J., Yang, J. J., Wu, W., Li, X., Tong, W. M., Strukov, D. B., Snider, G. S., Medeiros-Ribeiro, G., & Williams, R. S.
- Affiliations
- Hewlett-Packard (United States) (US)
- Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, and Technology Development Organization (TDO), Hewlett-Packard Company, 1000 NE Circle Blvd., Corvallis, Oregon 97330
- Corresponding author
- Xia, Qiangfei
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2009-09-01
- Volume
- 9
- Issue
- 10
- Pages
- 3640-3645
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2136288682
- Semantic Scholar
- 1e9918b0123bc1dad1483e7976c111b1c7c2dc7b
- Cited by
- 671
- References
- 13
- Citations by year
- 2026: 19 · 2025: 19 · 2024: 24 · 2023: 25 · 2022: 20 · 2021: 43 · 2020: 50 · 2019: 60 · 2018: 40 · 2017: 36 · 2016: 45 · 2015: 47 · 2014: 58 · 2013: 62 · 2012: 50
- FWCI
- 31.70
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nano Letters (publishedVersion)
- PubMed (publishedVersion)
- Scholarworks (University of Massachusetts Amherst) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › VLSI and FPGA Design Techniques
- Keywords
- memristors, CMOS integration, reconfigurable logic, crossbar arrays, TiO2 thin films, nanoimprint lithography, FPGA, logic gates, flip-flops, device configuration, hybrid integrated circuits
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