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Low Energy Implantation into Transition-Metal Dichalcogenide Monolayers to Form Janus Structures
Abstract
Abstract Atomically thin two-dimensional (2D) materials face significant energy barriers for synthesis and processing into functional metastable phases such as Janus structures. Here, the controllable implantation of hyperthermal species from pulsed laser deposition (PLD) plasmas is introduced as a top-down method to compositionally engineer 2D monolayers. The kinetic energies of Se clusters impinging on suspended monolayer WS2 crystals were controlled in the <10 eV/atom range with in situ plasma diagnostics to determine the thresholds for selective top layer replacement of sulfur by selenium for the formation of high quality WSSe Janus monolayers at low (300 °C) temperatures and bottom layer replacement for complete conversion to WSe2. Atomic-resolution electron microscopy and spectroscopy in tilted geometry confirm the WSSe Janus monolayer. Molecular dynamics simulations reveal that Se clusters implant to form disordered metastable alloy regions, which then recrystallize to form highly ordered structures, demonstrating low-energy implantation by PLD for the synthesis of 2D Janus layers and alloys of variable composition.
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Cites
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
Kresse, G., & Furthmüller, J. (1996) · Physical Review B · doi:10.1103/physrevb.54.11169 · Cited by 123,652
Fast Parallel Algorithms for Short-Range Molecular Dynamics
Plimpton, S. (1995) · Journal of Computational Physics · doi:10.1006/jcph.1995.1039 · Cited by 44,721
Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
Visualization and analysis of atomistic simulation data with OVITO–the Open Visualization Tool
Stukowski, A. (2010) · Modelling and Simulation in Materials Science and Engineering · doi:10.1088/0965-0393/18/1/015012 · Cited by 16,608
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
2D transition metal dichalcogenides
Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V., & Kis, A. (2017) · Nature Reviews Materials · doi:10.1038/natrevmats.2017.33 · Cited by 6,075
Togo, A., Oba, F., & Tanaka, I. (2008) · Physical Review B · doi:10.1103/physrevb.78.134106 · Cited by 5,486
The Stopping and Range of Ions in Matter
Ziegler, J. F., & Biersack, J. P. (1985) · Treatise on Heavy-Ion Science · doi:10.1007/978-1-4615-8103-1_3 · Cited by 3,984
Janus monolayers of transition metal dichalcogenides
Lu, A.-Y., Zhu, H., Xiao, J., Chuu, C.-P., Han, Y., Chiu, M.-H., Cheng, C.-C., Yang, C.-W., Wei, K.-H., Yang, Y., et al. (2017) · Nature Nanotechnology · doi:10.1038/nnano.2017.100 · Cited by 2,472
Band offsets and heterostructures of two-dimensional semiconductors
Kang, J., Tongay, S., Zhou, J., Li, J., & Wu, J. (2013) · Applied Physics Letters · doi:10.1063/1.4774090 · Cited by 1,708
Janus Monolayer Transition-Metal Dichalcogenides
Zhang, J., Jia, S., Kholmanov, I., Dong, L., Er, D., Chen, W., Guo, H., Jin, Z., Shenoy, V. B., Shi, L., et al. (2017) · ACS Nano · doi:10.1021/acsnano.7b03186 · Cited by 1,655
Identification of individual and few layers of WS2 using Raman Spectroscopy
Berkdemir, A., Gutiérrez, H. R., Botello-Méndez, A. R., Perea-López, N., Elías, A. L., Chia, C.-I., Wang, B., Crespi, V. H., López-Urías, F., Charlier, J.-C., et al. (2013) · Scientific Reports · doi:10.1038/srep01755 · Cited by 1,599
Phonons in single-layer and few-layer MoS2and WS2
Molina-Sánchez, A., & Wirtz, L. (2011) · Physical Review B · doi:10.1103/physrevb.84.155413 · Cited by 1,443
Komsa, H.-P., Kotakoski, J., Kurasch, S., Lehtinen, O., Kaiser, U., & Krasheninnikov, A. V. (2012) · Physical Review Letters · doi:10.1103/physrevlett.109.035503 · Cited by 1,168
Large In-Plane and Vertical Piezoelectricity in Janus Transition Metal Dichalchogenides
Dong, L., Lou, J., & Shenoy, V. B. (2017) · ACS Nano · doi:10.1021/acsnano.7b03313 · Cited by 947
Interlayer Breathing and Shear Modes in Few-Trilayer MoS2 and WSe2
Zhao, Y., Luo, X., Li, H., Zhang, J., Araujo, P. T., Gan, C. K., Wu, J., Zhang, H., Quek, S. Y., Dresselhaus, M. S., et al. (2013) · Nano Letters · doi:10.1021/nl304169w · Cited by 684
Synthesis of Novel Thin-Film Materials by Pulsed Laser Deposition
Lowndes, D. H., Geohegan, D. B., Puretzky, A. A., Norton, D. P., & Rouleau, C. M. (1996) · Science · doi:10.1126/science.273.5277.898 · Cited by 644
Self-citationFirst-principles Raman spectra of MoS2, WS2 and their heterostructures
Liang, L., & Meunier, V. (2014) · Nanoscale · doi:10.1039/c3nr06906k · Cited by 430
Self-citationSynthesis of WS2 xSe2–2 x Alloy Nanosheets with Composition-Tunable Electronic Properties
Duan, X., Wang, C., Fan, Z., Hao, G., Kou, L., Halim, U., Li, H., Wu, X., Wang, Y., Jiang, J., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b03662 · Cited by 381
Determination of core structure periodicity and point defect density along dislocations
Koch, C. T. (2002) · Cited by 359
Two-Dimensional Transition Metal Dichalcogenide Alloys: Stability and Electronic Properties
Komsa, H.-P., & Krasheninnikov, A. V. (2012) · The Journal of Physical Chemistry Letters · doi:10.1021/jz301673x · Cited by 356
Quaternary 2D Transition Metal Dichalcogenides (TMDs) with Tunable Bandgap
Susarla, S., Kutana, A., Hachtel, J. A., Kochat, V., Apte, A., Vajtai, R., Idrobo, J. C., Yakobson, B. I., Tiwary, C. S., & Ajayan, P. M. (2017) · Advanced Materials · doi:10.1002/adma.201702457 · Cited by 285
Cluster–surface interaction: From soft landing to implantation
Popok, V. N., Barke, I., Campbell, E. E. B., & Meiwes-Broer, K.-H. (2011) · Surface Science Reports · doi:10.1016/j.surfrep.2011.05.002 · Cited by 278
Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
Mahjouri-Samani, M., Lin, M.-W., Wang, K., Lupini, A. R., Lee, J., Basile, L., Boulesbaa, A., Rouleau, C. M., Puretzky, A. A., Ivanov, I. N., et al. (2015) · Nature Communications · doi:10.1038/ncomms8749 · Cited by 257
Self-citationMonolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing
Kang, J., Tongay, S., Li, J., & Wu, J. (2013) · Journal of Applied Physics · doi:10.1063/1.4799126 · Cited by 247
Ion Implantation of Graphene—Toward IC Compatible Technologies
Bangert, U., Pierce, W., Kepaptsoglou, D. M., Ramasse, Q., Zan, R., Gass, M. H., Van den Berg, J. A., Boothroyd, C. B., Amani, J., & Hofsäss, H. (2013) · Nano Letters · doi:10.1021/nl402812y · Cited by 213
Raman scattering intensities in α-quartz: A first-principles investigation
Umari, P., Pasquarello, A., & Dal Corso, A. (2001) · Physical Review B · doi:10.1103/physrevb.63.094305 · Cited by 211
Ghorbani-Asl, M., Kretschmer, S., Spearot, D. E., & Krasheninnikov, A. V. (2017) · 2D Materials · doi:10.1088/2053-1583/aa6b17 · Cited by 194
Classifying the Electronic and Optical Properties of Janus Monolayers
Riis-Jensen, A. C., Deilmann, T., Olsen, T., & Thygesen, K. S. (2019) · ACS Nano · doi:10.1021/acsnano.9b06698 · Cited by 176
Metal–Semiconductor Phase‐Transition in WSe2(1‐x)Te2x Monolayer
Yu, P., Lin, J., Sun, L., Le, Q. L., Yu, X., Gao, G., Hsu, C., Wu, D., Chang, T., Zeng, Q., et al. (2016) · Advanced Materials · doi:10.1002/adma.201603991 · Cited by 152
Ma, Q., Isarraraz, M., Wang, C. S., Preciado, E., Klee, V., Bobek, S., Yamaguchi, K., Li, E. Y., Odenthal, P., Nguyen, A. E., et al. (2014) · ACS Nano · doi:10.1021/nn5004327 · Cited by 124
Imaging of Vapor Plumes Produced by Matrix Assisted Laser Desorption: A Plume Sharpening Effect
Puretzky, A. A., Geohegan, D. B., Hurst, G. B., Buchanan, M. V., & Luk’yanchuk, B. (1999) · Physical Review Letters · doi:10.1103/physrevlett.83.444 · Cited by 112
Self-citationSuppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe2
Li, X., Puretzky, A. A., Sang, X., Santosh, K. C., Tian, M., Ceballos, F., Mahjouri‐Samani, M., Wang, K., Unocic, R. R., Zhao, H., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201603850 · Cited by 104
Self-citationStrain-Tuning Atomic Substitution in Two-Dimensional Atomic Crystals
Li, H., Liu, H., Zhou, L., Wu, X., Pan, Y., Ji, W., Zheng, B., Zhang, Q., Zhuang, X., Zhu, X., et al. (2018) · ACS Nano · doi:10.1021/acsnano.8b01646 · Cited by 91
Selective Engineering of Chalcogen Defects in MoS2 by Low-Energy Helium Plasma
Huang, B., Tian, F., Shen, Y., Zheng, M., Zhao, Y., Wu, J., Liu, Y., Pennycook, S. J., & Thong, J. T. L. (2019) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b05507 · Cited by 55
Pulsed Growth of Vertically Aligned Nanotube Arrays with Variable Density
Jackson, J. J., Puretzky, A. A., More, K. L., Rouleau, C. M., Eres, G., & Geohegan, D. B. (2010) · ACS Nano · doi:10.1021/nn102029y · Cited by 44
Self-citationLiang, L., & Meunier, V. (2013) · Applied Physics Letters · doi:10.1063/1.4800777 · Cited by 38
Self-citationConvergent ion beam alteration of 2D materials and metal-2D interfaces
Cheng, Z., Abuzaid, H., Yu, Y., Zhang, F., Li, Y., Noyce, S. G., Williams, N. X., Lin, Y.-C., Doherty, J. L., Tao, C., et al. (2019) · 2D Materials · doi:10.1088/2053-1583/ab1764 · Cited by 30
Self-citation
Metadata
- Authors
- Lin, Y.-C., Liu, C., Yu, Y., Zarkadoula, E., Yoon, M., Puretzky, A. A., Liang, L., Kong, X., Gu, Y., Strasser, A., Meyer, H. M., Lorenz, M., Chisholm, M. F., Ivanov, I. N., Rouleau, C. M., Duscher, G., Xiao, K., & Geohegan, D. B.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2020-03-09
- Volume
- 14
- Issue
- 4
- Pages
- 3896-3906
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W3009964724
- Cited by
- 284
- References
- 38
- FWCI
- 11.93
- Type
- journal article
- Language
- en
- Open access
- closed
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