The DOI matches its Crossref record; 52 of the 52 references it cites were found in a registry or an index.
Role of Hydrogen in Graphene Chemical Vapor Deposition Growth on a Copper Surface
Abstract
Synthesizing bilayer graphene (BLG), which has a band gap, is an important step in graphene application in microelectronics. Experimentally, it was broadly observed that hydrogen plays a crucial role in graphene chemical vapor deposition (CVD) growth on a copper surface. Here, by using ab initio calculations, we have revealed a crucial role of hydrogen in graphene CVD growth, terminating the graphene edges. Our study demonstrates the following. (i) At a low hydrogen pressure, the graphene edges are not passivated by H and thus tend to tightly attach to the catalyst surface. As a consequence, the diffusion of active C species into the area beneath the graphene top layer (GTL) is prohibited, and therefore, single-layer graphene growth is favored. (ii) At a high hydrogen pressure, the graphene edges tend to be terminated by H, and therefore, its detachment from the catalyst surface favors the diffusion of active C species into the area beneath the GTL to form the adlayer graphene below the GTL; as a result, the growth of BLG or few-layer graphene (FLG) is preferred. This insightful understanding reveals a crucial role of H in graphene CVD growth and paves a way for the controllable synthesis of BLG or FLG. Besides, this study also provides a reasonable explanation for the hydrogen pressure-dependent graphene CVD growth behaviors on a Cu surface.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Projector augmented-wave method
Blöchl, P. E. (1994) · Physical Review B · doi:10.1103/physrevb.50.17953 · Cited by 92,732
From ultrasoft pseudopotentials to the projector augmented-wave method
Kresse, G., & Joubert, D. (1999) · Physical Review B · doi:10.1103/physrevb.59.1758 · Cited by 85,307
Kresse, G., & Furthmüller, J. (1996) · Computational Materials Science · doi:10.1016/0927-0256(96)00008-0 · Cited by 75,638
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Semiempirical GGA‐type density functional constructed with a long‐range dispersion correction
Grimme, S. (2006) · Journal of Computational Chemistry · doi:10.1002/jcc.20495 · Cited by 31,038
A climbing image nudged elastic band method for finding saddle points and minimum energy paths
Henkelman, G., Uberuaga, B. P., & Jónsson, H. (2000) · The Journal of Chemical Physics · doi:10.1063/1.1329672 · Cited by 21,620
Ab initio molecular dynamics for open-shell transition metals
Kresse, G., & Hafner, J. (1993) · Physical Review B · doi:10.1103/physrevb.48.13115 · Cited by 8,359
Detection of individual gas molecules adsorbed on graphene
Schedin, F., Geim, A. K., Morozov, S. V., Hill, E. W., Blake, P., Katsnelson, M. I., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1967 · Cited by 8,028
Energy Band-Gap Engineering of Graphene Nanoribbons
Han, M. Y., Özyilmaz, B., Zhang, Y., & Kim, P. (2007) · Physical Review Letters · doi:10.1103/physrevlett.98.206805 · Cited by 5,207
Direct observation of a widely tunable bandgap in bilayer graphene
Zhang, Y., Tang, T.-T., Girit, C., Hao, Z., Martin, M. C., Zettl, A., Crommie, M. F., Shen, Y. R., & Wang, F. (2009) · Nature · doi:10.1038/nature08105 · Cited by 3,669
Controlling the Electronic Structure of Bilayer Graphene
Ohta, T., Bostwick, A., Seyller, T., Horn, K., & Rotenberg, E. (2006) · Science · doi:10.1126/science.1130681 · Cited by 3,339
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033
Gate-induced insulating state in bilayer graphene devices
Oostinga, J. B., Heersche, H. B., Liu, X., Morpurgo, A. F., & Vandersypen, L. M. K. (2008) · Nature Materials · doi:10.1038/nmat2082 · Cited by 1,669
Evolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling
Li, X., Cai, W., Colombo, L., & Ruoff, R. S. (2009) · Nano Letters · doi:10.1021/nl902515k · Cited by 1,604
Graphene nano-ribbon electronics
Chen, Z., Lin, Y.-M., Rooks, M. J., & Avouris, P. (2007) · Physica E: Low-dimensional Systems and Nanostructures · doi:10.1016/j.physe.2007.06.020 · Cited by 1,563
Yu, Q., Jauregui, L. A., Wu, W., Colby, R., Tian, J., Su, Z., Cao, H., Liu, Z., Pandey, D., Wei, D., et al. (2011) · Nature Materials · doi:10.1038/nmat3010 · Cited by 1,497
Li, X., Magnuson, C. W., Venugopal, A., Tromp, R. M., Hannon, J. B., Vogel, E. M., Colombo, L., & Ruoff, R. S. (2011) · Journal of the American Chemical Society · doi:10.1021/ja109793s · Cited by 1,274
Graphene segregated on Ni surfaces and transferred to insulators
Yu, Q., Lian, J., Siriponglert, S., Li, H., Chen, Y. P., & Pei, S.-S. (2008) · Applied Physics Letters · doi:10.1063/1.2982585 · Cited by 1,199
Graphene segregated on Ni surfaces and transferred to insulators
Yu, Q., Lian, J., Siriponglert, S., Li, H., Chen, Y. P., & Pei, S.-S. (2008) · Purdue e-Pubs (Purdue University System) · Cited by 1,073
Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes
Wu, J., Agrawal, M., Becerril, H. A., Bao, Z., Liu, Z., Chen, Y., & Peumans, P. (2010) · ACS Nano · doi:10.1021/nn900728d · Cited by 975
Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process
Li, X., Magnuson, C. W., Venugopal, A., An, J., Suk, J. W., Han, B., Borysiak, M., Cai, W., Velamakanni, A., Zhu, Y., et al. (2010) · Nano Letters · doi:10.1021/nl101629g · Cited by 933
Role of Hydrogen in Chemical Vapor Deposition Growth of Large Single-Crystal Graphene
Vlassiouk, I., Regmi, M., Fulvio, P., Dai, S., Datskos, P., Eres, G., & Smirnov, S. (2011) · ACS Nano · doi:10.1021/nn201978y · Cited by 900
Gao, L., Guest, J. R., & Guisinger, N. P. (2010) · Nano Letters · doi:10.1021/nl1016706 · Cited by 754
Half-Metallicity in Edge-Modified Zigzag Graphene Nanoribbons
Kan, E.-J., Li, Z., Yang, J., & Hou, J. G. (2008) · Journal of the American Chemical Society · doi:10.1021/ja710407t · Cited by 682
Scanning tunneling microscopy of graphene on Ru(0001)
Marchini, S., Günther, S., & Wintterlin, J. (2007) · Physical Review B · doi:10.1103/physrevb.76.075429 · Cited by 679
Structure, Stability, Edge States, and Aromaticity of Graphene Ribbons
Wassmann, T., Seitsonen, A. P., Saitta, A. M., Lazzeri, M., & Mauri, F. (2008) · Physical Review Letters · doi:10.1103/physrevlett.101.096402 · Cited by 639
Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
Mak, K. F., Lui, C. H., Shan, J., & Heinz, T. F. (2009) · Physical Review Letters · doi:10.1103/physrevlett.102.256405 · Cited by 638
Structure of epitaxial graphene on Ir(111)
N'Diaye, A. T., Coraux, J., Plasa, T. N., Busse, C., & Michely, T. (2008) · New Journal of Physics · doi:10.1088/1367-2630/10/4/043033 · Cited by 483
Graphene CVD growth on copper and nickel: role of hydrogen in kinetics and structure
Losurdo, M., Giangregorio, M. M., Capezzuto, P., & Bruno, G. (2011) · Physical Chemistry Chemical Physics · doi:10.1039/c1cp22347j · Cited by 472
Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition
Yan, K., Peng, H., Zhou, Y., Li, H., & Liu, Z. (2011) · Nano Letters · doi:10.1021/nl104000b · Cited by 419
Li, Z., Wu, P., Wang, C., Fan, X., Zhang, W., Zhai, X., Zeng, C., Li, Z., Yang, J., & Hou, J. (2011) · ACS Nano · doi:10.1021/nn200854p · Cited by 414
Gao, J., Yip, J., Zhao, J., Yakobson, B. I., & Ding, F. (2011) · Journal of the American Chemical Society · doi:10.1021/ja110927p · Cited by 349
Self-citationHexagonal Single Crystal Domains of Few-Layer Graphene on Copper Foils
Robertson, A. W., & Warner, J. H. (2011) · Nano Letters · doi:10.1021/nl104142k · Cited by 312
High-Yield Chemical Vapor Deposition Growth of High-Quality Large-Area AB-Stacked Bilayer Graphene
Liu, L., Zhou, H., Cheng, R., Yu, W. J., Liu, Y., Chen, Y., Shaw, J., Zhong, X., Huang, Y., & Duan, X. (2012) · ACS Nano · doi:10.1021/nn302918x · Cited by 282
Termini of Bottom-Up Fabricated Graphene Nanoribbons
Talirz, L., Söde, H., Cai, J., Ruffieux, P., Blankenburg, S., Jafaar, R., Berger, R., Feng, X., Müllen, K., Passerone, D., et al. (2013) · Journal of the American Chemical Society · doi:10.1021/ja311099k · Cited by 238
Domain Structure and Boundary in Single-Layer Graphene Grown on Cu(111) and Cu(100) Films
Ogawa, Y., Hu, B., Orofeo, C. M., Tsuji, M., Ikeda, K.-I., Mizuno, S., Hibino, H., & Ago, H. (2012) · The Journal of Physical Chemistry Letters · doi:10.1021/jz2015555 · Cited by 231
Ryu, J., Kim, Y., Won, D.-K., Kim, N., Park, J., Lee, E., Cho, D., Cho, S., Kim, S. J., Ryu, G. H., et al. (2013) · ACS Nano · doi:10.1021/nn405754d · Cited by 222
Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth
Shu, H., Chen, X., Tao, X., & Ding, F. (2012) · ACS Nano · doi:10.1021/nn300726r · Cited by 206
Self-citationGao, L., Ren, W., Zhao, J., Ma, L.-P., Chen, Z., & Cheng, H.-M. (2010) · Applied Physics Letters · doi:10.1063/1.3512865 · Cited by 200
Equiangular Hexagon‐Shape‐Controlled Synthesis of Graphene on Copper Surface
Wu, B., Geng, D., Guo, Y., Huang, L., Xue, Y., Zheng, J., Chen, J., Yu, G., Liu, Y., Jiang, L., et al. (2011) · Advanced Materials · doi:10.1002/adma.201101746 · Cited by 188
Growth from below: bilayer graphene on copper by chemical vapor deposition
Nie, S., Wu, W., Xing, S., Yu, Q., Bao, J., Pei, S.-S., & McCarty, K. F. (2012) · New Journal of Physics · doi:10.1088/1367-2630/14/9/093028 · Cited by 166
Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening
Ni, Z., Yu, T., Lu, Y., Wang, Y., Feng, Y. P., & Shen, Z. (2009) · ACS Nano · doi:10.1021/nn8008323 · Cited by 157
Transition Metal Surface Passivation Induced Graphene Edge Reconstruction
Gao, J., Zhao, J., & Ding, F. (2012) · Journal of the American Chemical Society · doi:10.1021/ja2104119 · Cited by 147
Self-citationGao, J., Yuan, Q., Hu, H., Zhao, J., & Ding, F. (2011) · The Journal of Physical Chemistry C · doi:10.1021/jp2051454 · Cited by 143
Self-citationControlled Growth of Multilayer, Few-Layer, and Single-Layer Graphene on Metal Substrates
Yao, Y., Li, Z., Lin, Z., Moon, K., Agar, J. C., & Wong, C. (2011) · The Journal of Physical Chemistry C · doi:10.1021/jp109002p · Cited by 141
Chemical doping-induced gap opening and spin polarization in graphene
Zanella, I., Guerini, S., Fagan, S. B., Filho, J. M., & Filho, A. G. S. (2008) · Physical Review B · doi:10.1103/physrevb.77.073404 · Cited by 141
Wu, W., Yu, Q., Peng, P., et al. (2011) · Nanotechnology · doi:10.1088/0957-4484/23/3/035603 · Cited by 134
Talyzin, A. V., Luzan, S. M., Anoshkin, I. V., Nasibulin, A. G., Jiang, H., Kauppinen, E. I., Mikoushkin, V. M., Shnitov, V. V., Marchenko, D. E., & Noréus, D. (2011) · ACS Nano · doi:10.1021/nn201224k · Cited by 119
Initial Stage of Graphene Growth on a Cu Substrate
Hwang, C., Yoo, K., Kim, S. J., Seo, E. K., Yu, H., & Biró, L. P. (2011) · The Journal of Physical Chemistry C · doi:10.1021/jp205980d · Cited by 59
Ziatdinov, M. A., Fujii, S., Kusakabe, K., Kiguchi, M., Mori, T., & Enoki, T. (2013) · Physical Review B · doi:10.1103/physrevb.87.115427 · Cited by 43
Hexagonal Graphene Onion Rings
Yan, Z., Liu, Y., Lin, J., Peng, Z., Wang, G., Pembroke, E., Zhou, H., Xiang, C., Raji, A. O., Samuel, E. L. G., et al. (2013) · Journal of the American Chemical Society · doi:10.1021/ja403915m · Cited by 36
Self-citation
Metadata
- Authors
- Zhang, X., Wang, L., Xin, J., Yakobson, B. I., & Ding, F.
- Venue
- Journal of the American Chemical Society
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-02-18
- Volume
- 136
- Issue
- 8
- Pages
- 3040-3047
- ISSN
- 0002-7863 (ISSN-L)
- 1520-5126
- OpenAlex
- W2318170937
- Cited by
- 284
- References
- 52
- FWCI
- 13.55
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
