The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.
Vacancy-Induced Ferromagnetism of MoS2 Nanosheets
Abstract
Outstanding magnetic properties are highly desired for two-dimensional ultrathin semiconductor nanosheets. Here, we propose a phase incorporation strategy to induce robust room-temperature ferromagnetism in a nonmagnetic MoS2 semiconductor. A two-step hydrothermal method was used to intentionally introduce sulfur vacancies in a 2H-MoS2 ultrathin nanosheet host, which prompts the transformation of the surrounding 2H-MoS2 local lattice into a trigonal (1T-MoS2) phase. 25% 1T-MoS2 phase incorporation in 2H-MoS2 nanosheets can enhance the electron carrier concentration by an order, introduce a Mo(4+) 4d energy state within the bandgap, and create a robust intrinsic ferromagnetic response of 0.25 μB/Mo by the exchange interactions between sulfur vacancy and the Mo(4+) 4d bandgap state at room temperature. This design opens up new possibility for effective manipulation of exchange interactions in two-dimensional nanostructures.
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Jiang, K., Luo, M., Liu, Z., Peng, M., Chen, D., Lu, Y.-R., Chan, T.-S., de Groot, F. M. F., & Tan, Y. (2021) · Nature Communications · doi:10.1038/s41467-021-21956-0 · Cited by 411
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Synthesis, stabilization and applications of 2-dimensional 1T metallic MoS 2
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Self-citation
Metadata
- Authors
- Cai, L., He, J., Liu, Q., Yao, T., Chen, L., Yan, W., Hu, F., Jiang, Y., Zhao, Y., Hu, T., Sun, Z., & Wei, S.
- Venue
- Journal of the American Chemical Society
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-02-10
- Volume
- 137
- Issue
- 7
- Pages
- 2622-2627
- ISSN
- 0002-7863 (ISSN-L)
- 1520-5126
- OpenAlex
- W2328237280
- Cited by
- 834
- References
- 29
- FWCI
- 24.51
- Type
- journal article
- Language
- en
- Open access
- closed
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