The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices
Abstract
Dynamic formation/rupture processes of metallic filament have been clarified in solid electrolyte- and oxide-based resistive memory devices, whereas they remain exclusive in organic ones. Here we report these dynamic processes in Cu/poly (3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester/indium–tin oxide (ITO) structure, which exhibits a typical bipolar resistive switching effect. Under illumination, an open circuit voltage of −0.15 V exists in high-resistance state, yet it vanishes in low-resistance state owing to the emergence of Cu filament. By combining the symmetry of current–voltage curves with corresponding energy band diagrams in different resistance states, it is demonstrated that the Cu filament grows from Cu/organics interface, ends at organics/ITO interface, and ruptures near organics/ITO interface. This work might advance the insight into resistive switching mechanisms in organic-based resistive memories.
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Cites
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Observation of conducting filament growth in nanoscale resistive memories
Yang, Y., Gao, P., Gaba, S., Chang, T., Pan, X., & Lu, W. (2012) · Nature Communications · doi:10.1038/ncomms1737 · Cited by 1,208
Yang, Y. C., Pan, F., Liu, Q., Liu, M., & Zeng, F. (2009) · Nano Letters · doi:10.1021/nl900006g · Cited by 876
Self-citationFujii, T., Arita, M., Takahashi, Y., & Fujiwara, I. (2011) · Applied Physics Letters · doi:10.1063/1.3593494 · Cited by 82
Cited by
Yoo, E. J., Lyu, M., Yun, J., Kang, C. J., Choi, Y. J., & Wang, L. (2015) · Advanced Materials · doi:10.1002/adma.201502889 · Cited by 567
Short-Term Plasticity and Long-Term Potentiation in Artificial Biosynapses with Diffusive Dynamics
Kim, M.-K., & Lee, J.-S. (2018) · ACS Nano · doi:10.1021/acsnano.7b08331 · Cited by 294
Gao, S., Zeng, F., Li, F., Wang, M., Mao, H., Wang, G., Song, C., & Pan, F. (2015) · Nanoscale · doi:10.1039/c4nr06406b · Cited by 113
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Metadata
- Authors
- Gao, S., Song, C., Chen, C., Zeng, F., & Pan, F.
- Venue
- The Journal of Physical Chemistry C
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-08-14
- Volume
- 116
- Issue
- 33
- Pages
- 17955-17959
- ISSN
- 1932-7447 (ISSN-L)
- 1932-7455
- OpenAlex
- W2317554828
- Cited by
- 217
- References
- 5
- FWCI
- 12.01
- Type
- journal article
- Language
- en
- Open access
- closed
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- Gao, S., Song, C., Chen, C., Zeng, F., & Pan, F. (2012). Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices. The Journal of Physical Chemistry C. https://doi.org/10.1021/jp305482c
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