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Cited by 537

The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.

Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics

Open access
Javey, Ali, Guo, Jing, Farmer, Damon B., Wang, Qian, Wang, Dunwei, Gordon, Roy G., Lundstrom, Mark, Dai, Hongjie·2004·Nano Letters

Abstract

High-performance enhancement-mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal−tube contacts, high-dielectric-constant HfO 2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents and subthreshold swings of ∼70−80 mV/decade and allows for low OFF currents and suppressed ambipolar conduction. The doped source and drain approach resembles that of MOSFETs and can impart excellent OFF states to nanotube FETs under aggressive vertical scaling. This presents an important advantage over devices with a metal source/drain, or devices commonly referred to as Schottky barrier FETs.

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Registry

Crossref · 10.1021/nl035185x

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Metadata

Authors
Javey, A., Guo, J., Farmer, D. B., Wang, Q., Wang, D., Gordon, R. G., Lundstrom, M., & Dai, H.
Venue
Nano Letters
Published
2004-02-20
Volume
4
Issue
3
Pages
447-450
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2146669227
Cited by
537
References
7
FWCI
25.00
Type
journal article
Language
en
Open access
green

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Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.