The DOI matches its Crossref record; 9 of the 9 references it cites were found in a registry or an index.
Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
Abstract
We have fabricated single-wall carbon nanotube field-effect transistors (CNFETs) in a conventional metal–oxide–semiconductor field-effect transistor (MOSFET) structure, with gate electrodes above the conduction channel separated from the channel by a thin dielectric. These top gate devices exhibit excellent electrical characteristics, including steep subthreshold slope and high transconductance, at gate voltages close to 1 V—a significant improvement relative to previously reported CNFETs which used the substrate as a gate and a thicker gate dielectric. Our measured device performance also compares very well to state-of-the-art silicon devices. These results are observed for both p- and n-type devices, and they suggest that CNFETs may be competitive with Si MOSFETs for future nanoelectronic applications.
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Cites
Crystalline Ropes of Metallic Carbon Nanotubes
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Room-temperature transistor based on a single carbon nanotube
Tans, S. J., Verschueren, A. R. M., & Dekker, C. (1998) · Nature · doi:10.1038/29954 · Cited by 5,425
American Institute of Physics Handbook
Dayton, I. E. (1964) · American Journal of Physics · doi:10.1119/1.1970399 · Cited by 3,000
Single- and multi-wall carbon nanotube field-effect transistors
Martel, R., Schmidt, T., Shea, H. R., Hertel, T., & Avouris, P. (1998) · Applied Physics Letters · doi:10.1063/1.122477 · Cited by 2,812
Self-citationLogic Circuits with Carbon Nanotube Transistors
Bachtold, A., Hadley, P., Nakanishi, T., & Dekker, C. (2001) · Science · doi:10.1126/science.1065824 · Cited by 2,616
Device scaling limits of Si MOSFETs and their application dependencies
Frank, D. J., Dennard, R. H., Nowak, E., Solomon, P. M., Taur, Y., & Wong, H.-S. P. (2001) · Proceedings of the IEEE · doi:10.1109/5.915374 · Cited by 1,572
Carbon Nanotube Inter- and Intramolecular Logic Gates
Derycke, V., Martel, R., Appenzeller, J., & Avouris, P. (2001) · Nano Letters · doi:10.1021/nl015606f · Cited by 1,053
Self-citationWork Functions and Surface Functional Groups of Multiwall Carbon Nanotubes
Ago, H., Kugler, T., Cacialli, F., Salaneck, W. R., Shaffer, M. S. P., Windle, A. H., & Friend, R. H. (1999) · The Journal of Physical Chemistry B · doi:10.1021/jp991659y · Cited by 969
Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes
Martel, R., Derycke, V., Lavoie, C., Appenzeller, J., Chan, K. K., Tersoff, J., & Avouris, P. (2001) · Physical Review Letters · doi:10.1103/physrevlett.87.256805 · Cited by 803
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Cited by
High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities
Lin, Y.-M., Appenzeller, J., Knoch, J., & Avouris, P. (2005) · IEEE Transactions On Nanotechnology · doi:10.1109/tnano.2005.851427 · Cited by 499
Self-citationA review on inkjet printing of nanoparticle inks for flexible electronics
Nayak, L., Mohanty, S., Nayak, S. K., & Ramadoss, A. (2019) · Journal of Materials Chemistry C · doi:10.1039/c9tc01630a · Cited by 497
Metadata
- Authors
- Wind, S. J., Appenzeller, J., Martel, R., Derycke, V., & Avouris, P.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2002-05-20
- Volume
- 80
- Issue
- 20
- Pages
- 3817-3819
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2054201028
- Cited by
- 668
- References
- 9
- FWCI
- 50.53
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
