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Cited by 451

The DOI matches its Crossref record; 19 of the 19 references it cites were found in a registry or an index.

Rational Synthesis of p-Type Zinc Oxide Nanowire Arrays Using Simple Chemical Vapor Deposition

Xiang, Bin, Wang, Pengwei, Zhang, Xingzheng, Dayeh, Shadi. A., Aplin, David P. R., Soci, Cesare, Yu, Dapeng, Wang, Deli·2007·Nano Letters

Abstract

We report, for the first time, the synthesis of the high-quality p-type ZnO NWs using a simple chemical vapor deposition method, where phosphorus pentoxide has been used as the dopant source. Single-crystal phosphorus doped ZnO NWs have their growth axis along the 001 direction and form perfect vertical arrays on a-sapphire. P-type doping was confirmed by photoluminescence measurements at various temperatures and by studying the electrical transport in single NWs field-effect transistors. Comparisons of the low-temperature PL of unintentionally doped ZnO (n-type), as-grown phosphorus-doped ZnO, and annealed phosphorus-doped ZnO NWs show clear differences related to the presence of intragap donor and acceptor states. The electrical transport measurements of phosphorus-doped NW FETs indicate a transition from n-type to p-type conduction upon annealing at high temperature, in good agreement with the PL results. The synthesis of p-type ZnO NWs enables novel complementary ZnO NW devices and opens up enormous opportunities for nanoscale electronics, optoelectronics, and medicines.

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Crossref · 10.1021/nl062410c

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Metadata

Authors
Xiang, B., Wang, P., Zhang, X., Dayeh, S. A., Aplin, D. P. R., Soci, C., Yu, D., & Wang, D.
Venue
Nano Letters
Published
2006-12-29
Volume
7
Issue
2
Pages
323-328
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2025117053
Cited by
451
References
19
FWCI
21.49
Type
journal article
Language
en
Open access
closed

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