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Cited by 177

The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.

Imaging, Simulation, and Electrostatic Control of Power Dissipation in Graphene Devices

Open access
Bae, Myung-Ho, Ong, Zhun-Yong, Estrada, David, Pop, Eric·2010·Nano Letters

Abstract

We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier distributions, fields, and GFET power dissipation. The hot spot corresponds to the location of minimum charge density along the GFET; by changing the applied bias, this can be shifted between electrodes or held in the middle of the channel in ambipolar transport. Interestingly, the hot spot shape bears the imprint of the density of states in mono- vs bilayer graphene. More broadly, we find that thermal imaging combined with self-consistent simulation provide a noninvasive approach for more deeply examining transport and energy dissipation in nanoscale devices.

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Crossref · 10.1021/nl1011596

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Metadata

Authors
Bae, M.-H., Ong, Z.-Y., Estrada, D., & Pop, E.
Venue
Nano Letters
Published
2010-06-03
Volume
10
Issue
12
Pages
4787-4793
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2122362929
Cited by
177
References
3
FWCI
7.10
Type
journal article
Language
en
Open access
green

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.