The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Stretchable Graphene Transistors with Printed Dielectrics and Gate Electrodes
Abstract
With the emergence of human interface technology, the development of new applications based on stretchable electronics such as conformal biosensors and rollable displays are required. However, the difficulty in developing semiconducting materials with high stretchability required for such applications has restricted the range of applications of stretchable electronics. Here, we present stretchable, printable, and transparent transistors composed of monolithically patterned graphene films. This material offers excellent mechanical, electrical, and optical properties, capable of use as semiconducting channels as well as the source/drain electrodes. Such monolithic graphene transistors show hole and electron mobilities of 1188 ± 136 and 422 ± 52 cm(2)/(V s), respectively, with stable operation at stretching up to 5% even after 1000 or more cycles.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Graphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Fine Structure Constant Defines Visual Transparency of Graphene
Nair, R. R., Blake, P., Grigorenko, A. N., Novoselov, K. S., Booth, T. J., Stauber, T., Peres, N. M. R., & Geim, A. K. (2008) · Science · doi:10.1126/science.1156965 · Cited by 9,084
Kim, D.-H., Lu, N., Ma, R., Kim, Y.-S., Kim, R.-H., Wang, S., Wu, J., Won, S. M., Tao, H., Islam, A., et al. (2011) · Science · doi:10.1126/science.1206157 · Cited by 4,836
Self-citationPermeation-driven flow in poly(dimethylsiloxane) microfluidic devices.
Randall, G. C., & Doyle, P. S. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0503287102 · Cited by 220
Cited by
Hammock, M. L., Chortos, A., Tee, B. C. ‐., Tok, J. B. ‐., & Bao, Z. (2013) · Advanced Materials · doi:10.1002/adma.201302240 · Cited by 2,396
Electrolyte‐Gated Transistors for Organic and Printed Electronics
Kim, S. H., Hong, K., Xie, W., Lee, K. H., Zhang, S., Lodge, T. P., & Frisbie, C. D. (2013) · Advanced Materials · doi:10.1002/adma.201202790 · Cited by 957
High-quality graphene via microwave reduction of solution-exfoliated graphene oxide
Voiry, D., Yang, J., Kupferberg, J., Fullon, R., Lee, C., Jeong, H. Y., Shin, H. S., & Chhowalla, M. (2016) · Science · doi:10.1126/science.aah3398 · Cited by 872
Self-citationStretchable and self-healing polymers and devices for electronic skin
Benight, S. J., Wang, C., Tok, J. B. H., & Bao, Z. (2013) · Progress in Polymer Science · doi:10.1016/j.progpolymsci.2013.08.001 · Cited by 617
Toward Printed Integrated Circuits based on Unipolar or Ambipolar Polymer Semiconductors
Baeg, K., Caironi, M., & Noh, Y. (2013) · Advanced Materials · doi:10.1002/adma.201205361 · Cited by 522
Metadata
- Authors
- Lee, S.-K., Kim, B. J., Jang, H., Yoon, S. C., Lee, C., Hong, B. H., Rogers, J. A., Cho, J. H., & Ahn, J.-H.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-10-11
- Volume
- 11
- Issue
- 11
- Pages
- 4642-4646
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2315972235
- Cited by
- 381
- References
- 5
- FWCI
- 16.27
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Stretchable Graphene Transistors with Printed Dielectrics and Gate Electrodes. https://app.cochat.ai/papers/10.1021/nl202134z
- The paper
- Lee, S.-K., Kim, B. J., Jang, H., Yoon, S. C., Lee, C., Hong, B. H., Rogers, J. A., Cho, J. H., & Ahn, J.-H. (2011). Stretchable Graphene Transistors with Printed Dielectrics and Gate Electrodes. Nano Letters. https://doi.org/10.1021/nl202134z
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.