The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Stretchable Graphene Transistors with Printed Dielectrics and Gate Electrodes
Abstract
With the emergence of human interface technology, the development of new applications based on stretchable electronics such as conformal biosensors and rollable displays are required. However, the difficulty in developing semiconducting materials with high stretchability required for such applications has restricted the range of applications of stretchable electronics. Here, we present stretchable, printable, and transparent transistors composed of monolithically patterned graphene films. This material offers excellent mechanical, electrical, and optical properties, capable of use as semiconducting channels as well as the source/drain electrodes. Such monolithic graphene transistors show hole and electron mobilities of 1188 ± 136 and 422 ± 52 cm(2)/(V s), respectively, with stable operation at stretching up to 5% even after 1000 or more cycles.
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Citations
Cites
Graphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Fine Structure Constant Defines Visual Transparency of Graphene
Nair, R. R., Blake, P., Grigorenko, A. N., Novoselov, K. S., Booth, T. J., Stauber, T., Peres, N. M. R., & Geim, A. K. (2008) · Science · doi:10.1126/science.1156965 · Cited by 9,084
Kim, D.-H., Lu, N., Ma, R., Kim, Y.-S., Kim, R.-H., Wang, S., Wu, J., Won, S. M., Tao, H., Islam, A., et al. (2011) · Science · doi:10.1126/science.1206157 · Cited by 4,836
Self-citationPermeation-driven flow in poly(dimethylsiloxane) microfluidic devices.
Randall, G. C., & Doyle, P. S. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0503287102 · Cited by 220
Cited by
Hammock, M. L., Chortos, A., Tee, B. C. ‐., Tok, J. B. ‐., & Bao, Z. (2013) · Advanced Materials · doi:10.1002/adma.201302240 · Cited by 2,396
Electrolyte‐Gated Transistors for Organic and Printed Electronics
Kim, S. H., Hong, K., Xie, W., Lee, K. H., Zhang, S., Lodge, T. P., & Frisbie, C. D. (2013) · Advanced Materials · doi:10.1002/adma.201202790 · Cited by 957
High-quality graphene via microwave reduction of solution-exfoliated graphene oxide
Voiry, D., Yang, J., Kupferberg, J., Fullon, R., Lee, C., Jeong, H. Y., Shin, H. S., & Chhowalla, M. (2016) · Science · doi:10.1126/science.aah3398 · Cited by 872
Self-citationHigh-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Wang, B., Huang, W., Chi, L., Al-Hashimi, M., Marks, T. J., & Facchetti, A. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.8b00045 · Cited by 818
Nanomaterial‐Enabled Stretchable Conductors: Strategies, Materials and Devices
Yao, S., & Zhu, Y. (2015) · Advanced Materials · doi:10.1002/adma.201404446 · Cited by 695
Metadata
- Authors
- Lee, S.-K., Kim, B. J., Jang, H., Yoon, S. C., Lee, C., Hong, B. H., Rogers, J. A., Cho, J. H., & Ahn, J.-H.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-10-11
- Volume
- 11
- Issue
- 11
- Pages
- 4642-4646
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2315972235
- Cited by
- 381
- References
- 5
- FWCI
- 16.27
- Type
- journal article
- Language
- en
- Open access
- closed
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