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Cited by 240

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

All Graphene-Based Thin Film Transistors on Flexible Plastic Substrates

Lee, Seoung-Ki, Jang, Ho Young, Jang, Sukjae, Choi, Euiyoung, Hong, Byung Hee, Lee, Jaichan, Park, Sungho, Ahn, Jong-Hyun·2012·Nano Letters

Abstract

High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GO dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm(2)), breakdown bias (1.5 × 10(6) V/cm), and good mechanical flexibility. Graphene-based TFTs showed a hole and electron mobility of 300 and 250 cm(2)/(V·s), respectively, at a drain bias of -0.1 V. Moreover, graphene TFTs on the plastic substrates exhibited remarkably good mechanical flexibility and optical transmittance. This method explores a significant step for the application of graphene toward flexible and stretchable electronics.

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Metadata

Authors
Lee, S.-K., Jang, H. Y., Jang, S., Choi, E., Hong, B. H., Lee, J., Park, S., & Ahn, J.-H.
Venue
Nano Letters
Published
2012-06-15
Volume
12
Issue
7
Pages
3472-3476
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2032175819
Cited by
240
References
2
FWCI
12.74
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: All Graphene-Based Thin Film Transistors on Flexible Plastic Substrates. https://app.cochat.ai/papers/10.1021/nl300948c
The paper
Lee, S.-K., Jang, H. Y., Jang, S., Choi, E., Hong, B. H., Lee, J., Park, S., & Ahn, J.-H. (2012). All Graphene-Based Thin Film Transistors on Flexible Plastic Substrates. Nano Letters. https://doi.org/10.1021/nl300948c

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