The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Resolution Limits of Electron-Beam Lithography toward the Atomic Scale
Open accessAbstract
We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread function at 200 keV. Furthermore, we measured the energy loss in the resist using electron-energy-loss spectroscopy.
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Self-citationOptical rectification and field enhancement in a plasmonic nanogap
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Self-citationUnderstanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
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Directed self-assembly of block copolymers for use in bit patterned media fabrication
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Printing Beyond sRGB Color Gamut by Mimicking Silicon Nanostructures in Free-Space
Dong, Z., Ho, J., Yu, Y. F., Fu, Y. H., Paniagua-Dominguez, R., Wang, S., Kuznetsov, A. I., & Yang, J. K. W. (2017) · Nano Letters · doi:10.1021/acs.nanolett.7b03613 · Cited by 335
Harinarayana, V., & Shin, Y. C. (2021) · Optics & Laser Technology · doi:10.1016/j.optlastec.2021.107180 · Cited by 259
Mojarad, N., Hojeij, M., Wang, L., Gobrecht, J., & Ekinci, Y. (2015) · Nanoscale · doi:10.1039/c4nr07420c · Cited by 102
Metadata
- Authors
- Manfrinato, V. R., Zhang, L., Su, D., Duan, H., Hobbs, R. G., Stach, E. A., & Berggren, K. K.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-03-19
- Volume
- 13
- Issue
- 4
- Pages
- 1555-1558
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W1980284953
- Cited by
- 451
- References
- 14
- FWCI
- 20.57
- Type
- journal article
- Language
- en
- Open access
- green
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