Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond
Abstract
Using extreme ultraviolet interference lithography, we demonstrate patterning of different inorganic photoresists, reaching the highest reported photolithography resolution of 7 nm half-pitch.
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Sub-10 nm half-pitch resolutions were demonstrated with EUV interference lithography at the XIL-II beamline of the Swiss Light Source at The Paul Scherrer Institute.
“Sub-10 nm half-pitch resolutions were demonstrated with EUV interference lithography at the XIL -II beamline of the Swiss Light Source at The Paul Scherrer Institute 52,53 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [52]
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- Authors
- Mojarad, N., Hojeij, M., Wang, L., Gobrecht, J., & Ekinci, Y.
- Affiliations
- Paul Scherrer Institute (CH)
- Corresponding author
- Mojarad, N.
- Ekinci, Y.
- ORCID
- Ekinci, Y.
- Venue
- Nanoscale
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2015
- Volume
- 7
- Issue
- 9
- Pages
- 4031-4037
- ISSN
- 2040-3364 (ISSN-L)
- 2040-3372
- OpenAlex
- W2102182765
- Cited by
- 102
- References
- 31
- Citations by year
- 2026: 2 · 2025: 7 · 2024: 4 · 2023: 5 · 2022: 5 · 2021: 7 · 2020: 10 · 2019: 11 · 2018: 15 · 2017: 14 · 2016: 15 · 2015: 7
- FWCI
- 8.20
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Nanoscale (publishedVersion)
- PubMed (publishedVersion)
- DORA PSI (Paul Scherrer Institute) (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Engineering › Biomedical Engineering › Nanofabrication and Lithography Techniques
- Keywords
- EUV lithography, 13.5 nm wavelength, transmission gratings, hard mask, pattern transfer, nanofabrication
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