Ultrafast photocurrents and THz generation in single InAs‐nanowires
Abstract
To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs‐nanowire‐based circuits, an on‐chip photocurrent pump‐probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo‐thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contributions. Moreover, it is shown that THz radiation is generated in the optically excited InAs‐nanowires, which is interpreted in terms of a dominating photo‐Dember effect. The results are relevant for nanowire‐based optoelectronic and photovoltaic applications as well as for the design of nanowire‐based THz sources.
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Diffusion currents are driven by localized excitations and uneven carrier mobilities in photo-Dember or photo-thermoelectric effects.
“Diffusion currents, on the other hand, are driven by localized excitations and uneven carrier mobilities in photo-Dember30 or photo-thermoelectric31 effects.”
From Ultrafast terahertz emission from emerging symmetry-broken materials (2023) · cites this paper as [31]
The photo-Dember effect arising from unequal electron-hole diffusion rates is a common source of charge currents in nanowires, often in addition to or in competition with junction fields, depending on doping type.
“The photo-Dember effect arising from unequal electron-hole diffusion rates is a common source of charge currents in nanowires31,222–224, often in addition to or in competition with junction fields221,222, depending on doping type.”
From Ultrafast terahertz emission from emerging symmetry-broken materials (2023) · cites this paper as [31]
Cites
Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires
Wang, J., Gudiksen, M. S., Duan, X., Cui, Y., & Lieber, C. M. (2001) · Science · doi:10.1126/science.1062340 · Cited by 1,858 · see citing works
Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures
Shah, J. (1999) · Springer series in solid-state sciences · doi:10.1007/978-3-662-03770-6 · Cited by 1,132 · see citing works
Ultrafast hot-carrier-dominated photocurrent in graphene
Sun, D., Aivazian, G., Jones, A. M., Ross, J., Yao, W., Cobden, D. H., & Xu, X. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2011.243 · Cited by 462 · see citing works
Bass, M. A., Franken, P. A., Ward, J. F., & Weinreich, G. (1962) · Physical Review Letters · doi:10.1103/physrevlett.9.446 · Cited by 429 · see citing works
Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection
Hayden, O., Agarwal, R., & Lieber, C. M. (2006) · Nature Materials · doi:10.1038/nmat1635 · Cited by 428 · see citing works
Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics
Zhang, X.-C., & Auston, D. H. (1992) · Journal of Applied Physics · doi:10.1063/1.350710 · Cited by 427 · see citing works
Semiconductor Surfaces and Interfaces
Mönch, W. (1995) · Springer series in surface sciences · doi:10.1007/978-3-662-03134-6 · Cited by 397 · see citing works
Simulation of terahertz generation at semiconductor surfaces
Johnston, M. B., Whittaker, D. M., Corchia, A., Davies, A. G., & Linfield, E. H. (2002) · Physical review. B, Condensed matter · doi:10.1103/physrevb.65.165301 · Cited by 364 · see citing works
Study of terahertz radiation from InAs and InSb
Gu, P., Tani, M., Kono, S., Sakai, K., & Zhang, X.-C. (2002) · Journal of Applied Physics · doi:10.1063/1.1465507 · Cited by 326 · see citing works
Intrinsic Response Time of Graphene Photodetectors
Urich, A., Unterrainer, K., & Mueller, T. (2011) · Nano Letters · doi:10.1021/nl2011388 · Cited by 298 · see citing works
Current-voltage characteristics and parameter retrieval of semiconducting nanowires
Zhang, Z., Jin, C. H., Liang, X., Chen, Q., & Peng, L. (2006) · Applied Physics Letters · doi:10.1063/1.2177362 · Cited by 277 · see citing works
Ahn, Y., Dunning, J. E., & Park, J. (2005) · Nano Letters · doi:10.1021/nl050631x · Cited by 263 · see citing works
Impulse response of photoconductors in transmission lines
Auston, D. H. (1983) · IEEE Journal of Quantum Electronics · doi:10.1109/jqe.1983.1071904 · Cited by 246 · see citing works
Carrier lifetime versus ion-implantation dose in silicon on sapphire
Doany, F. E., Grischkowsky, D., & C., C. (1987) · Applied Physics Letters · doi:10.1063/1.98173 · Cited by 214 · see citing works
Infrared Photodetectors in Heterostructure Nanowires
Pettersson, H., Trägårdh, J., Persson, A. I., Landin, L., Hessman, D., & Samuelson, L. (2006) · Nano Letters · doi:10.1021/nl052170l · Cited by 210 · see citing works
Subpicosecond carrier transport in GaAs surface-space-charge fields
Dekorsy, T., Pfeifer, Τ., Kütt, W., & Kurz, H. (1993) · Physical review. B, Condensed matter · doi:10.1103/physrevb.47.3842 · Cited by 209 · see citing works
Few-Cycle THz Emission from Cold Plasma Oscillations
Kersting, R., Unterrainer, K., Strasser, G., Kauffmann, H. F., & Gornik, E. (1997) · Physical Review Letters · doi:10.1103/physrevlett.79.3038 · Cited by 201 · see citing works
Terahertz radiation from InAs induced by carrier diffusion and drift
Liu, K., Xu, J., Yuan, T., & Zhang, X.-C. (2006) · Physical Review B · doi:10.1103/physrevb.73.155330 · Cited by 181 · see citing works
Time-resolved ultrafast photocurrents and terahertz generation in freely suspended graphene
Prechtel, L., Song, L., Schuh, D., Ajayan, P., Wegscheider, W., & Holleitner, A. W. (2012) · Nature Communications · doi:10.1038/ncomms1656 · Cited by 176 · see citing works
Self-citationDiameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors
Kim, C., Lee, H.-S., Cho, Y., Kang, K., & Jo, M. (2010) · Nano Letters · doi:10.1021/nl100136b · Cited by 161 · see citing works
Subpicosecond electrical pulse generation using photoconductive switches with long carrier lifetimes
Krökel, D., Grischkowsky, D., & Ketchen, M. B. (1989) · Applied Physics Letters · doi:10.1063/1.100792 · Cited by 145 · see citing works
Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy
Koblmüller, G., Hertenberger, S., Vizbaras, K., Bichler, M., Bao, F. Y., Zhang, J.-P., & Abstreiter, G. (2010) · Nanotechnology · doi:10.1088/0957-4484/21/36/365602 · Cited by 127 · see citing works
Self-citationGraham, R., Miller, C., Oh, E., & Yu, D. (2010) · Nano Letters · doi:10.1021/nl1038456 · Cited by 119 · see citing works
Photocurrent and photoconductance properties of a GaAs nanowire
Thunich, S., Prechtel, L., Spirkoska, D., Abstreiter, G., Morral, A. F. I., & Holleitner, A. W. (2009) · Applied Physics Letters · doi:10.1063/1.3193540 · Cited by 99 · see citing works
Self-citationExcitation wavelength dependence of terahertz emission from InN and InAs
Chern, G. D., Readinger, E. D., Shen, H., Wraback, M., Gallinat, C. S., Koblmüller, G., & Speck, J. S. (2006) · Applied Physics Letters · doi:10.1063/1.2358938 · Cited by 83 · see citing works
Self-citationEfficient terahertz emission from InAs nanowires
Seletskiy, D. V., Hasselbeck, M. P., Cederberg, J. G., Katzenmeyer, A., Toimil-Molares, M. E., Léonard, F., Talin, A. A., & Sheik-Bahae, M. (2011) · Physical Review B · doi:10.1103/physrevb.84.115421 · Cited by 81 · see citing works
Nonthermalized distribution of electrons on picosecond time scale in GaAs
Snoke, D. W., Rühle, W. W., Lu, Y., & Bauser, E. (1992) · Physical Review Letters · doi:10.1103/physrevlett.68.990 · Cited by 71 · see citing works
Hertenberger, S., Rudolph, D., Bolte, S., Döblinger, M., Max Bichler, A., Spirkoska, D., Finley, J. J., Abstreiter, G., & Koblmüller, G. (2011) · Applied Physics Letters · doi:10.1063/1.3567496 · Cited by 69 · see citing works
Self-citationTerahertz emission from (100) InAs surfaces at high excitation fluences
Reid, M., & Fedosejevs, R. (2004) · Applied Physics Letters · doi:10.1063/1.1842863 · Cited by 69 · see citing works
Vitiello, M. S., Viti, L., Romeo, L., Ercolani, D., Scalari, G., Faist, J., Beltram, F., Sorba, L., & Tredicucci, A. (2012) · Applied Physics Letters · doi:10.1063/1.4724309 · Cited by 57 · see citing works
Allen, J. E., Hemesath, E. R., & Lauhon, L. J. (2009) · Nano Letters · doi:10.1021/nl803924z · Cited by 49 · see citing works
Effective Seebeck coefficient for semiconductors
Cai, J., & Mahan, G. D. (2006) · Physical Review B · doi:10.1103/physrevb.74.075201 · Cited by 48 · see citing works
Gabor, N. M., Zhong, Z., Bosnick, K. A., & McEuen, P. L. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.087404 · Cited by 46 · see citing works
Hertenberger, S., Rudolph, D., Becker, J., Max Bichler, A., Finley, J. J., Abstreiter, G., & Koblmüller, G. (2012) · Nanotechnology · doi:10.1088/0957-4484/23/23/235602 · Cited by 43 · see citing works
Self-citationSingle photon emission and detection at the nanoscale utilizing semiconductor nanowires
Reimer, M. E., van Kouwen, M. P., Barkelid, M., Hocevar, M., van Weert, M. H. M., Algra, R. E., Bakkers, E. P. A. M., Björk, M. T., Schmid, H., Riel, H., et al. (2011) · Journal of Nanophotonics · doi:10.1117/1.3562279 · Cited by 42 · see citing works
Time-Resolved Photoinduced Thermoelectric and Transport Currents in GaAs Nanowires
Prechtel, L., Padilla, M., Erhard, N., Karl, H., Abstreiter, G., Morral, A. F. I., & Holleitner, A. W. (2012) · Nano Letters · doi:10.1021/nl300262j · Cited by 37 · see citing works
Self-citationTransient response of photodetectors
Dunn, G. M., Walker, A., Vickers, A. J., & Wicks, V. R. (1996) · Journal of Applied Physics · doi:10.1063/1.361449 · Cited by 27 · see citing works
Terahertz waves emitted from an optical fiber
Yi, M., Lee, K., Lim, J., Hong, Y., Jho, Y.-D., & Ahn, J. (2010) · Optics Express · doi:10.1364/oe.18.013693 · Cited by 24 · see citing works
Electrothermally driven current vortices in inhomogeneous bipolar semiconductors
Fu, D., Levander, A. X., Zhang, R., Ager, J. W., & Wu, J. (2011) · Physical Review B · doi:10.1103/physrevb.84.045205 · Cited by 24 · see citing works
Controlled oxide removal for the preparation of damage-free InAs(110) surfaces
Veal, T. D., & McConville, C. F. (2000) · Applied Physics Letters · doi:10.1063/1.1310211 · Cited by 19 · see citing works
Spatially resolved ultrafast transport current in GaAs photoswitches
Prechtel, L., Manus, S., Schuh, D., Wegscheider, W., & Holleitner, A. W. (2010) · Applied Physics Letters · doi:10.1063/1.3458819 · Cited by 8 · see citing works
Self-citationHot carrier relaxation in bulk In0.53Ga0.47As
Gregory, A. P., Usher, S., Majumder, F. A., & Phillips, R. T. (1993) · Solid State Communications · doi:10.1016/0038-1098(93)90121-3 · Cited by 7 · see citing works
Terahertz emission from surface optical rectification in n-InAs
Reid, M., & Fedosejevs, R. (2004) · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · doi:10.1117/12.567332 · Cited by 5 · see citing works
(2006) · doi:10.3403/30122197 · Cited by 5 · see citing works
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Kastl, C., Karnetzky, C., Karl, H., & Holleitner, A. W. (2015) · Nature Communications · doi:10.1038/ncomms7617 · Cited by 170 · see citing works
Self-citationLiu, Z., Luo, T., Liang, B., Chen, G., Yu, G., Xie, X., Chen, D., & Shen, G. (2013) · Nano Research · doi:10.1007/s12274-013-0356-0 · Cited by 138 · see citing works
“InAs NWs ~5 μm in length and ~130 nm in diameter have also been synthesized by the molecular beam epitaxy (MBE) method [9].”
MethodSingle Nanowire Photoconductive Terahertz Detectors
Peng, K., Parkinson, P., Fu, L., Gao, Q., Jiang, N., Guo, Y., Wang, F., Joyce, H. J., Boland, J. L., Tan, H. H., et al. (2014) · Nano Letters · doi:10.1021/nl5033843 · Cited by 118 · see citing works
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Pettine, J., Padmanabhan, P., Sirica, N., Prasankumar, R. P., Taylor, A. J., & Chen, H.-T. (2023) · Light: Science & Applications · doi:10.1038/s41377-023-01163-w · Cited by 81 · see citing works
Han, Y., Fu, M., Tang, Z., Zheng, X., Ji, X., Wang, X., Lin, W., Yang, T., & Chen, Q. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.6b13775 · Cited by 78 · see citing works
Pogna, E. A. A., Asgari, M., Zannier, V., Sorba, L., Viti, L., & Vitiello, M. S. (2020) · Light Science & Applications · doi:10.1038/s41377-020-00425-1 · Cited by 54 · see citing works
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Seifert, P., Vaklinova, K., Kern, K., Burghard, M., & Holleitner, A. W. (2017) · Nano Letters · doi:10.1021/acs.nanolett.6b04312 · Cited by 52 · see citing works
Self-citationHigh‐Performance Nanowire Oxide Photo‐Thin Film Transistor
Ahn, S., Jeon, S., Jeon, Y. W., Kim, C., Lee, M., Lee, C., Park, J., Song, I., Nathan, A., Lee, S., et al. (2013) · Advanced Materials · doi:10.1002/adma201301102 · Cited by 51 · see citing works
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Erhard, N., Zenger, S., Morkötter, S., Rudolph, D., Weiss, M., Krenner, H. J., Karl, H., Abstreiter, G., Finley, J. J., Koblmüller, G., et al. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b02766 · Cited by 43 · see citing works
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Limpert, S., Burke, A. M., Chen, I., Anttu, N., Lehmann, S., Fahlvik, S., Bremner, S., Conibeer, G., Thelander, C., Pistol, M., et al. (2017) · Nano Letters · doi:10.1021/acs.nanolett.7b00536 · Cited by 43 · see citing works
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Self-citationOptical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires
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Xi, F., Yang, H., Khayrudinov, V., He, Y., Haggrén, T., Zhou, Y., Lipsanen, H. K., Sun, Z., & Xu, X. (2021) · Nanotechnology · doi:10.1088/1361-6528/ac3948 · Cited by 6 · see citing works
“After, Erhard et al and Arlauskas et al have further reported the enhanced THz emission ef fi ciency of InAs NWs and attribute the THz emission mechanism to the photo-Dember effect [ 31, 32 ] .”
Trends in Terahertz Technology
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Buryakov, A. M., Ivanov, M., Khusyainov, D. I., Gorbatova, A. V., Bilyk, V. R., Klimov, E. A., Galiev, G. B., Vilarinho, P. M., & Мишина, Е. Д. (2021) · Annalen der Physik · doi:10.1002/andp.202100041 · Cited by 6 · see citing works
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BackgroundPogna, E. A. A., Asgari, M., Zannier, V., Sorba, L., Viti, L., & Vitiello, M. S. (2020) · arXiv (Cornell University) · doi:10.48550/arxiv.2011.10742
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Island, J. O. (2023) · Elsevier eBooks · doi:10.1016/b978-0-12-818876-7.00011-8
- Authors
- Erhard, N., Seifert, P., Prechtel, L., Hertenberger, S., Karl, H., Abstreiter, G., Koblmüller, G., & Holleitner, A. W.
- Affiliations
- Technical University of Munich (DE)
- University of Augsburg (DE)
- Corresponding author
- Erhard, Nadine
- Holleitner, Alexander W.
- Venue
- Annalen der Physik
- Publisher
- Wiley
- Published
- 2012-12-17
- Volume
- 525
- Issue
- 1-2
- Pages
- 180-188
- ISSN
- 0003-3804 (ISSN-L)
- 1521-3889
- OpenAlex
- W1905344023
- Cited by
- 30
- References
- 44
- Citations by year
- 2023: 5 · 2021: 4 · 2020: 3 · 2017: 5 · 2016: 1 · 2015: 6 · 2014: 4 · 2013: 2
- FWCI
- 2.19
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Annalen der Physik (publishedVersion)
- OPUS (Augsburg University) (submittedVersion)
- Funders
- National Institute for Materials Science
- Topics
- Physical Sciences › Engineering › Biomedical Engineering › Nanowire Synthesis and Applications
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor Quantum Structures and Devices
- Keywords
- InAs nanowires, ultrafast photocurrents, terahertz generation, photo-Dember effect, pump-probe spectroscopy, coplanar stripline, optoelectronic devices, photovoltaic devices
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