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Cited by 294

The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.

Piezoelectric-Potential-Controlled Polarity-Reversible Schottky Diodes and Switches of ZnO Wires

Zhou, Jun, Fei, Peng, Gu, Yudong, Mai, Wenjie, Gao, Yifan, Yang, Rusen, Bao, Gang, Wang, Zhong Lin·2008·Nano Letters

Abstract

Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in I-V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop along the PFW, which have been quantified using the thermionic emission-diffusion theory. A new piezotronic switch device with an "on" and "off" ratio of approximately 120 has been demonstrated. This work demonstrates a novel approach for fabricating diodes and switches that rely on a strain governed piezoelectric-semiconductor coupling process.

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Metadata

Authors
Zhou, J., Fei, P., Gu, Y., Mai, W., Gao, Y., Yang, R., Bao, G., & Wang, Z. L.
Venue
Nano Letters
Published
2008-09-30
Volume
8
Issue
11
Pages
3973-3977
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2161619292
Cited by
294
References
15
FWCI
7.07
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Piezoelectric-Potential-Controlled Polarity-Reversible Schottky Diodes and Switches of ZnO Wires. https://app.cochat.ai/papers/10.1021/nl802497e
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Zhou, J., Fei, P., Gu, Y., Mai, W., Gao, Y., Yang, R., Bao, G., & Wang, Z. L. (2008). Piezoelectric-Potential-Controlled Polarity-Reversible Schottky Diodes and Switches of ZnO Wires. Nano Letters. https://doi.org/10.1021/nl802497e

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