The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.
Piezoelectric-Potential-Controlled Polarity-Reversible Schottky Diodes and Switches of ZnO Wires
Abstract
Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in I-V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop along the PFW, which have been quantified using the thermionic emission-diffusion theory. A new piezotronic switch device with an "on" and "off" ratio of approximately 120 has been demonstrated. This work demonstrates a novel approach for fabricating diodes and switches that rely on a strain governed piezoelectric-semiconductor coupling process.
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Self-citationPiezotronics and piezo-phototronics for adaptive electronics and optoelectronics
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Self-citationRecent Progress on Piezoelectric and Triboelectric Energy Harvesters in Biomedical Systems
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Self-citation
Metadata
- Authors
- Zhou, J., Fei, P., Gu, Y., Mai, W., Gao, Y., Yang, R., Bao, G., & Wang, Z. L.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2008-09-30
- Volume
- 8
- Issue
- 11
- Pages
- 3973-3977
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2161619292
- Cited by
- 294
- References
- 15
- FWCI
- 7.07
- Type
- journal article
- Language
- en
- Open access
- closed
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