The DOI matches its Crossref record; 9 of the 9 references it cites were found in a registry or an index.
Topological Insulator Nanowires and Nanoribbons
Open accessAbstract
Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi(2)Se(3) material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi(2)Se(3) nanomaterials with a variety of morphologies. The synthesis of Bi(2)Se(3) nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with approximately 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.
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Cites
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Cited by
Topological insulators and superconductors
Qi, X.-L., & Zhang, S.-C. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.1057 · Cited by 14,394
Synthesis of MoS 2 and MoSe 2 Films with Vertically Aligned Layers
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Self-citationWang, H., Lu, Z., Xu, S., Kong, D., Cha, J. J., Zheng, G., Hsu, P.-C., Yan, K., Bradshaw, D., Prinz, F. B., et al. (2013) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1316792110 · Cited by 988
Self-citationModel Hamiltonian for topological insulators
Liu, C.-X., Qi, X.-L., Zhang, H., Dai, X., Fang, Z., & Zhang, S.-C. (2010) · Physical Review B · doi:10.1103/physrevb.82.045122 · Cited by 923
MoSe 2 and WSe 2 Nanofilms with Vertically Aligned Molecular Layers on Curved and Rough Surfaces
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Self-citationRaman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 Nanoplatelets
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Few-Layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential
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Self-citationOpportunities in chemistry and materials science for topological insulators and their nanostructures
Kong, D., & Cui, Y. (2011) · Nature Chemistry · doi:10.1038/nchem.1171 · Cited by 254
Self-citation
Metadata
- Authors
- Kong, D., Randel, J. C., Peng, H., Cha, J. J., Meister, S., Lai, K., Chen, Y., Shen, Z.-X., Manoharan, H. C., & Cui, Y.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2009-12-23
- Volume
- 10
- Issue
- 1
- Pages
- 329-333
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2056016207
- Cited by
- 330
- References
- 9
- FWCI
- 14.50
- Type
- journal article
- Language
- en
- Open access
- green
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