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Fluorographene: A Wide Bandgap Semiconductor with Ultraviolet Luminescence
Abstract
The manipulation of the bandgap of graphene by various means has stirred great interest for potential applications. Here we show that treatment of graphene with xenon difluoride produces a partially fluorinated graphene (fluorographene) with covalent C-F bonding and local sp(3)-carbon hybridization. The material was characterized by Fourier transform infrared spectroscopy, Raman spectroscopy, electron energy loss spectroscopy, photoluminescence spectroscopy, and near edge X-ray absorption spectroscopy. These results confirm the structural features of the fluorographane with a bandgap of 3.8 eV, close to that calculated for fluorinated single layer graphene, (CF)(n). The material luminesces broadly in the UV and visible light regions, and has optical properties resembling diamond, with both excitonic and direct optical absorption and emission features. These results suggest the use of fluorographane as a new, readily prepared material for electronic, optoelectronic applications, and energy harvesting applications.
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Metadata
- Authors
- Jeon, K.-J., Lee, Z., Pollak, E., Moreschini, L., Bostwick, A., Park, C.-M., Mendelsberg, R., Radmilovic, V., Kostecki, R., Richardson, T. J., & Rotenberg, E.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-01-04
- Volume
- 5
- Issue
- 2
- Pages
- 1042-1046
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2025226488
- Cited by
- 451
- References
- 25
- FWCI
- 22.00
- Type
- journal article
- Language
- en
- Open access
- closed
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