The DOI matches its Crossref record; 11 of the 11 references it cites were found in a registry or an index.
Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
Open accessAbstract
Bismuth selenide (Bi(2)Se(3)) is a topological insulator with metallic surface states (SS) residing in a large bulk bandgap. In experiments, synthesized Bi(2)Se(3) is often heavily n-type doped due to selenium vacancies. Furthermore, it is discovered from experiments on bulk single crystals that Bi(2)Se(3) gets additional n-type doping after exposure to the atmosphere, thereby reducing the relative contribution of SS in total conductivity. In this article, transport measurements on Bi(2)Se(3) nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi(2)Se(3) under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological SS. Appropriate surface passivation or encapsulation may be required to probe topological SS of Bi(2)Se(3) by transport measurements.
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Cites
Topological insulators and superconductors
Qi, X.-L., & Zhang, S.-C. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.1057 · Cited by 14,394
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
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Self-citationTopological insulators with inversion symmetry
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Self-citationA tunable topological insulator in the spin helical Dirac transport regime
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Cited by
Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
Kim, D., Cho, S., Butch, N. P., Syers, P., Kirshenbaum, K., Adam, S., Paglione, J., & Fuhrer, M. S. (2012) · Nature Physics · doi:10.1038/nphys2286 · Cited by 379
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Self-citationControlled Synthesis of High-Mobility Atomically Thin Bismuth Oxyselenide Crystals
Wu, J., Tan, C., Tan, Z., Liu, Y., Yin, J., Dang, W., Wang, M., & Peng, H. (2017) · Nano Letters · doi:10.1021/acs.nanolett.7b00335 · Cited by 312
Self-citationReactive Chemical Doping of theBi2Se3Topological Insulator
Benia, H. M., Lin, C., Kern, K., & Ast, C. R. (2011) · Physical Review Letters · doi:10.1103/physrevlett.107.177602 · Cited by 268
Metadata
- Authors
- Kong, D., Cha, J. J., Lai, K., Peng, H., Analytis, J. G., Meister, S., Chen, Y., Zhang, H.-J., Fisher, I. R., Shen, Z.-X., & Cui, Y.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-05-23
- Volume
- 5
- Issue
- 6
- Pages
- 4698-4703
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2071573149
- Cited by
- 362
- References
- 11
- FWCI
- 13.90
- Type
- journal article
- Language
- en
- Open access
- green
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