The DOI matches its Crossref record; 34 of the 34 references it cites were found in a registry or an index.
Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
Open accessAbstract
Despite their name, the bulk electrical conductivity of most topological insulators is relatively high, masking many of the important characteristics of its protected, surface conducting states. Counter-doping reduces the bulk conductivity of Bi2Se3 significantly, allowing these surface states and their properties to be clearly identified. The newly discovered three-dimensional strong topological insulators (STIs) exhibit topologically protected Dirac surface states1,2. Although the STI surface state has been studied spectroscopically, for example, by photoemission3,4,5 and scanned probes6,7,8,9,10, transport experiments11,12,13,14,15,16,17 have failed to demonstrate the most fundamental signature of the STI: ambipolar metallic electronic transport in the topological surface of an insulating bulk. Here we show that the surfaces of thin (∼ 10 nm), low-doped Bi2Se3 (≈1017 cm−3) crystals are strongly electrostatically coupled, and a gate electrode can completely remove bulk charge carriers and bring both surfaces through the Dirac point simultaneously. We observe clear surface band conduction with a linear Hall resistivity and a well-defined ambipolar field effect, as well as a charge-inhomogeneous minimum conductivity region18,19,20. A theory of charge disorder in a Dirac band19,20,21 explains well both the magnitude and the variation with disorder strength of the minimum conductivity (2 to 5 e2/h per surface) and the residual (puddle) carrier density (0.4×1012 to 4×1012 cm−2). From the measured carrier mobilities 320–1,500 cm2 V−1 s−1, the charged impurity densities 0.5×1013 to 2.3×1013 cm−2 are inferred. They are of a similar magnitude to the measured doping levels at zero gate voltage (1×1013 to 3×1013 cm−2), identifying dopants as the charged impurities.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
Zhang, H., Liu, C.-X., Qi, X.-L., Dai, X., Fang, Z., & Zhang, S.-C. (2009) · Nature Physics · doi:10.1038/nphys1270 · Cited by 6,359
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Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
Xia, Y., Qian, D., Hsieh, D., Wray, L., Pal, A., Lin, H., Bansil, A., Grauer, D., Hor, Y. S., Cava, R. J., et al. (2009) · Nature Physics · doi:10.1038/nphys1274 · Cited by 3,765
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Das, A., Pisana, S., Chakraborty, B., Piscanec, S., Saha, S. K., Waghmare, U. V., Novoselov, K. S., Krishnamurthy, H. R., Geim, A. K., Ferrari, A. C., et al. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.67 · Cited by 3,621
Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3
Chen, Y. L., Analytis, J. G., Chu, J.-H., Liu, Z. K., Mo, S.-K., Qi, X. L., Zhang, H. J., Lu, D. H., Dai, X., Fang, Z., et al. (2009) · Science · doi:10.1126/science.1173034 · Cited by 3,585
Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System
Hikami, S., Larkin, A. I., & Nagaoka, Y. (1980) · Progress of Theoretical Physics · doi:10.1143/ptp.63.707 · Cited by 2,789
A tunable topological insulator in the spin helical Dirac transport regime
Hsieh, D., Xia, Y., Qian, D., Wray, L., Dil, J. H., Meier, F., Osterwalder, J., Patthey, L., Checkelsky, J. G., Ong, N. P., et al. (2009) · Nature · doi:10.1038/nature08234 · Cited by 1,979
Charged-impurity scattering in graphene
Chen, J.-H., Jang, C., Adam, S., Fuhrer, M. S., Williams, E. D., & Ishigami, M. (2008) · Nature Physics · doi:10.1038/nphys935 · Cited by 1,477
Self-citationCarrier Transport in Two-Dimensional Graphene Layers
Hwang, E. H., Adam, S., & Sarma, S. D. (2007) · Physical Review Letters · doi:10.1103/physrevlett.98.186806 · Cited by 1,253
Self-citation
Cited by
Topological Insulator Materials
Ando, Y. (2013) · Journal of the Physical Society of Japan · doi:10.7566/jpsj.82.102001 · Cited by 1,789
Colloquium : Topological band theory
Bansil, A., Lin, H., & Das, T. (2016) · Reviews of Modern Physics · doi:10.1103/revmodphys.88.021004 · Cited by 1,587
Topological Crystalline Insulators and Topological Superconductors: From Concepts to Materials
Ando, Y., & Fu, L. (2015) · Annual Review of Condensed Matter Physics · doi:10.1146/annurev-conmatphys-031214-014501 · Cited by 723
Xu, Y., Miotkowski, I., Liu, C., Tian, J., Nam, H., Alidoust, N., Hu, J., Shih, C.-K., Hasan, M. Z., & Chen, Y. P. (2014) · Nature Physics · doi:10.1038/nphys3140 · Cited by 430
Dirac-fermion-mediated ferromagnetism in a topological insulator
Checkelsky, J. G., Ye, J., Onose, Y., Iwasa, Y., & Tokura, Y. (2012) · Nature Physics · doi:10.1038/nphys2388 · Cited by 355
Metadata
- Authors
- Kim, D., Cho, S., Butch, N. P., Syers, P., Kirshenbaum, K., Adam, S., Paglione, J., & Fuhrer, M. S.
- Venue
- Nature Physics
- Published
- 2012-04-15
- Volume
- 8
- Issue
- 6
- Pages
- 459-463
- ISSN
- 1745-2473 (ISSN-L)
- 1745-2481
- OpenAlex
- W2046670639
- Cited by
- 379
- References
- 34
- FWCI
- 26.59
- Type
- journal article
- Language
- en
- Open access
- green
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