The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Channel Length Scaling of MoS2 MOSFETs
Open accessAbstract
In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS(2) two-dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We compare the short channel behavior of sets of MOSFETs with various channel thickness, and reveal the superior immunity to short channel effects of MoS(2) transistors. We observe no obvious short channel effects on the device with 100 nm channel length (L(ch)) fabricated on a 5 nm thick MoS(2) 2D crystal even when using 300 nm thick SiO(2) as gate dielectric, and has a current on/off ratio up to ~10(9). We also observe the on-current saturation at short channel devices with continuous scaling due to the carrier velocity saturation. Also, we reveal the performance limit of short channel MoS(2) transistors is dominated by the large contact resistance from the Schottky barrier between Ni and MoS(2) interface, where a fully transparent contact is needed to achieve a high-performance short channel device.
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Cites
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Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Two-dimensional atomic crystals
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Datta, S. (1995) · doi:10.1017/cbo9780511805776 · Cited by 7,704
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
Zhang, H., Liu, C.-X., Qi, X.-L., Dai, X., Fang, Z., & Zhang, S.-C. (2009) · Nature Physics · doi:10.1038/nphys1270 · Cited by 6,359
Topological Insulators in Three Dimensions
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Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3
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Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Voiry, D., Fullon, R., Yang, J., de Carvalho Castro e Silva, C., Kappera, R., Bozkurt, I., Kaplan, D., Lagos, M. J., Batson, P. E., Gupta, G., et al. (2016) · Nature Materials · doi:10.1038/nmat4660 · Cited by 824
Two-dimensional transistors beyond graphene and TMDCs
Liu, Y., Duan, X., Huang, Y., & Duan, X. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00318a · Cited by 474
Li, N., Wang, Q., Shen, C., Wei, Z., Yu, H., Zhao, J., Lu, X., Wang, G., He, C., Xie, L., et al. (2020) · Nature Electronics · doi:10.1038/s41928-020-00475-8 · Cited by 452
Chuang, H.-J., Chamlagain, B., Koehler, M., Perera, M. M., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b05066 · Cited by 426
Metadata
- Authors
- Liu, H., Neal, A. T., & Ye, P. D.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-09-12
- Volume
- 6
- Issue
- 10
- Pages
- 8563-8569
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W1993916317
- Cited by
- 816
- References
- 7
- FWCI
- 28.24
- Type
- journal article
- Language
- en
- Open access
- green
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