The DOI matches its Crossref record; 25 of the 25 references it cites were found in a registry or an index.
Channel Length Scaling of MoS2 MOSFETs
Open accessAbstract
In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS(2) two-dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We compare the short channel behavior of sets of MOSFETs with various channel thickness, and reveal the superior immunity to short channel effects of MoS(2) transistors. We observe no obvious short channel effects on the device with 100 nm channel length (L(ch)) fabricated on a 5 nm thick MoS(2) 2D crystal even when using 300 nm thick SiO(2) as gate dielectric, and has a current on/off ratio up to ~10(9). We also observe the on-current saturation at short channel devices with continuous scaling due to the carrier velocity saturation. Also, we reveal the performance limit of short channel MoS(2) transistors is dominated by the large contact resistance from the Schottky barrier between Ni and MoS(2) interface, where a fully transparent contact is needed to achieve a high-performance short channel device.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Electronic Transport in Mesoscopic Systems
Datta, S. (1995) · doi:10.1017/cbo9780511805776 · Cited by 7,704
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
Zhang, H., Liu, C.-X., Qi, X.-L., Dai, X., Fang, Z., & Zhang, S.-C. (2009) · Nature Physics · doi:10.1038/nphys1270 · Cited by 6,359
Schwierz, F. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.89 · Cited by 5,267
Topological Insulators in Three Dimensions
Fu, L., Kane, C. L., & Mele, E. J. (2007) · Physical Review Letters · doi:10.1103/physrevlett.98.106803 · Cited by 4,651
Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3
Chen, Y. L., Analytis, J. G., Chu, J.-H., Liu, Z. K., Mo, S.-K., Qi, X. L., Zhang, H. J., Lu, D. H., Dai, X., Fang, Z., et al. (2009) · Science · doi:10.1126/science.1173034 · Cited by 3,585
Cited by
Graphene-Like Two-Dimensional Materials
Xu, M., Liang, T., Shi, M., & Chen, H. (2013) · Chemical Reviews · doi:10.1021/cr300263a · Cited by 4,531
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Ferrari, A. C., Bonaccorso, F., Fal'ko, V., Novoselov, K. S., Roche, S., Bøggild, P., Borini, S., Koppens, F. H. L., Palermo, V., Pugno, N., et al. (2015) · Nanoscale · doi:10.1039/c4nr01600a · Cited by 3,027
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Electrical contacts to two-dimensional semiconductors
Allain, A., Kang, J., Banerjee, K., & Kis, A. (2015) · Nature Materials · doi:10.1038/nmat4452 · Cited by 1,859
Isolation and characterization of few-layer black phosphorus
Castellanos-Gomez, A., Vicarelli, L., Prada, E., Island, J. O., Narasimha-Acharya, K. L., Blanter, S. I., Groenendijk, D. J., Buscema, M., Steele, G. A., Alvarez, J. V., et al. (2014) · 2D Materials · doi:10.1088/2053-1583/1/2/025001 · Cited by 1,621
MoS2transistors with 1-nanometer gate lengths
Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., et al. (2016) · Science · doi:10.1126/science.aah4698 · Cited by 1,511
Few-Layer MoS2: A Promising Layered Semiconductor
Ganatra, R., & Zhang, Q. (2014) · ACS Nano · doi:10.1021/nn405938z · Cited by 1,422
Promises and prospects of two-dimensional transistors
Liu, Y., Duan, X., Shin, H.-J., Park, S., Huang, Y., & Duan, X. (2021) · Nature · doi:10.1038/s41586-021-03339-z · Cited by 1,356
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
Cui, X., Lee, G.-H., Kim, Y. D., Arefe, G., Huang, P. Y., Lee, C.-H., Chenet, D. A., Zhang, X., Wang, L., Ye, F., et al. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.70 · Cited by 1,354
Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode
Deng, Y., Luo, Z., Conrad, N. J., Liu, H., Gong, Y., Najmaei, S., Ajayan, P. M., Lou, J., Xu, X., & Ye, P. D. (2014) · ACS Nano · doi:10.1021/nn5027388 · Cited by 1,246
Self-citationElectroluminescence in Single Layer MoS2
Sundaram, R. S., Engel, M., Lombardo, A., Krupke, R., Ferrari, A. C., Avouris, P., & Steiner, M. (2013) · Nano Letters · doi:10.1021/nl400516a · Cited by 1,007
Polarity-Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons
Cai, Y., Zhang, G., & Zhang, Y.-W. (2014) · Journal of the American Chemical Society · doi:10.1021/ja4109787 · Cited by 959
Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
Wang, X., Wang, P., Wang, J., Hu, W., Zhou, X., Guo, N., Huang, H., Sun, S., Shen, H., Lin, T., et al. (2015) · Advanced Materials · doi:10.1002/adma.201503340 · Cited by 853
Voiry, D., Fullon, R., Yang, J., de Carvalho Castro e Silva, C., Kappera, R., Bozkurt, I., Kaplan, D., Lagos, M. J., Batson, P. E., Gupta, G., et al. (2016) · Nature Materials · doi:10.1038/nmat4660 · Cited by 824
Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2
Wang, X., Gong, Y., Shi, G., Chow, W. L., Keyshar, K., Ye, G., Vajtai, R., Lou, J., Liu, Z., Ringe, E., et al. (2014) · ACS Nano · doi:10.1021/nn501175k · Cited by 818
Li, S.-L., Tsukagoshi, K., Orgiu, E., & Samorì, P. (2016) · Chemical Society Reviews · doi:10.1039/c5cs00517e · Cited by 549
Raman spectroscopy of shear and layer breathing modes in multilayer MoS2
Zhang, X., Han, W. P., Wu, J. B., Milana, S., Lu, Y., Li, Q. Q., Ferrari, A. C., & Tan, P. H. (2013) · Physical Review B · doi:10.1103/physrevb.87.115413 · Cited by 501
Two-dimensional transistors beyond graphene and TMDCs
Liu, Y., Duan, X., Huang, Y., & Duan, X. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00318a · Cited by 474
Li, N., Wang, Q., Shen, C., Wei, Z., Yu, H., Zhao, J., Lu, X., Wang, G., He, C., Xie, L., et al. (2020) · Nature Electronics · doi:10.1038/s41928-020-00475-8 · Cited by 452
Layer-by-Layer Thinning of MoS2 by Plasma
Liu, Y., Nan, H., Wu, X., Pan, W., Wang, W., Bai, J., Zhao, W., Sun, L., Wang, X., & Ni, Z. (2013) · ACS Nano · doi:10.1021/nn400644t · Cited by 447
Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes
Liu, Y., Wu, H., Cheng, H.-C., Yang, S., Zhu, E., He, Q., Ding, M., Li, D., Guo, J., Weiss, N. O., et al. (2015) · Nano Letters · doi:10.1021/nl504957p · Cited by 431
Chuang, H.-J., Chamlagain, B., Koehler, M., Perera, M. M., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b05066 · Cited by 426
Sulfur vacancies in monolayer MoS2 and its electrical contacts
Liu, D., Guo, Y., Fang, L., & Robertson, J. (2013) · Applied Physics Letters · doi:10.1063/1.4824893 · Cited by 417
Ambipolar Phosphorene Field Effect Transistor
Das, S., Demarteau, M., & Roelofs, A. (2014) · ACS Nano · doi:10.1021/nn505868h · Cited by 398
Chen, W., Zhao, J., Zhang, J., Gu, L., Yang, Z., Li, X., Yu, H., Zhu, X., Yang, R., Shi, D., et al. (2015) · Journal of the American Chemical Society · doi:10.1021/jacs.5b10519 · Cited by 389
Multifunctional high-performance van der Waals heterostructures
Huang, M., Li, S., Zhang, Z., Xiong, X., Li, X., & Wu, Y. (2017) · Nature Nanotechnology · doi:10.1038/nnano.2017.208 · Cited by 389
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
Perera, M. M., Lin, M.-W., Chuang, H.-J., Chamlagain, B. P., Wang, C., Tan, X., Cheng, M. M.-C., Tománek, D., & Zhou, Z. (2013) · ACS Nano · doi:10.1021/nn401053g · Cited by 344
Polarized photocurrent response in black phosphorus field-effect transistors
Hong, T., Chamlagain, B., Lin, W., Chuang, H.-J., Pan, M., Zhou, Z., & Xu, Y.-Q. (2014) · Nanoscale · doi:10.1039/c4nr02164a · Cited by 342
Electronic Transport in Two-Dimensional Materials
Sangwan, V. K., & Hersam, M. C. (2018) · Annual Review of Physical Chemistry · doi:10.1146/annurev-physchem-050317-021353 · Cited by 336
High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS3 Nanosheet
Chu, J., Wang, F., Yin, L., Lei, L., Yan, C., Wang, F., Wen, Y., Wang, Z., Jiang, C., Feng, L., et al. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201701342 · Cited by 293
Ryder, C. R., Wood, J. D., Wells, S. A., & Hersam, M. C. (2016) · ACS Nano · doi:10.1021/acsnano.6b01091 · Cited by 283
Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors
Xie, L., Liao, M., Wang, S., Yu, H., Du, L., Tang, J., Zhao, J., Zhang, J., Chen, P., Lu, X., et al. (2017) · Advanced Materials · doi:10.1002/adma.201702522 · Cited by 283
Chen, P., Li, N., Chen, X., Ong, W.-J., & Zhao, X. (2017) · 2D Materials · doi:10.1088/2053-1583/aa8d37 · Cited by 283
Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment
Tosun, M., Chan, L., Amani, M., Roy, T., Ahn, G. H., Taheri, P., Carraro, C., Ager, J. W., Maboudian, R., & Javey, A. (2016) · ACS Nano · doi:10.1021/acsnano.6b02521 · Cited by 265
Metadata
- Authors
- Liu, H., Neal, A. T., & Ye, P. D.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-09-12
- Volume
- 6
- Issue
- 10
- Pages
- 8563-8569
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W1993916317
- Cited by
- 816
- References
- 25
- FWCI
- 28.24
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
