The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Tunable Stress and Controlled Thickness Modification in Graphene by Annealing
Open accessAbstract
Graphene has many unique properties which make it an attractive material for fundamental study as well as for potential applications. In this paper, we report the first experimental study of process-induced defects and stress in graphene using Raman spectroscopy and imaging. While defects lead to the observation of defect-related Raman bands, stress causes shift in phonon frequency. A compressive stress (as high as 2.1 GPa) was induced in graphene by depositing a 5 nm SiO(2) followed by annealing, whereas a tensile stress ( approximately 0.7 GPa) was obtained by depositing a thin silicon capping layer. In the former case, both the magnitude of the compressive stress and number of graphene layers can be controlled or modified by the annealing temperature. As both the stress and thickness affect the physical properties of graphene, this study may open up the possibility of utilizing thickness and stress engineering to improve the performance of graphene-based devices. Local heating techniques may be used to either induce the stress or reduce the thickness selectively.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Chiral tunnelling and the Klein paradox in graphene
Katsnelson, M. I., Novoselov, K. S., & Geim, A. K. (2006) · Nature Physics · doi:10.1038/nphys384 · Cited by 3,896
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033 · cited 1×
“Researchers have successfully developed an energy gap in graphene by patterning it into nanoribbon,(5) forming quantum dots 4 or making use of mutilayer graphene sheets with or without the application of an external electrical field.(6,7) Besides global back gates,(8,9) top local gates(10-12) have also been employed t…”
Method
Cited by
Van der Waals integration before and beyond two-dimensional materials
Liu, Y., Huang, Y., & Duan, X. (2019) · Nature · doi:10.1038/s41586-019-1013-x · Cited by 1,541
Tight-binding approach to uniaxial strain in graphene
Pereira, V. M., Castro Neto, A. H., & Peres, N. M. R. (2009) · Physical Review B · doi:10.1103/physrevb.80.045401 · Cited by 1,350
Controllable N-Doping of Graphene
Guo, B., Liu, Q., Chen, E., Zhu, H., Fang, L., & Gong, J. R. (2010) · Nano Letters · doi:10.1021/nl103079j · Cited by 854
Understanding Pt Nanoparticle Anchoring on Graphene Supports through Surface Functionalization
Xin, L., Yang, F., Rasouli, S., Qiu, Y., Li, Z.-F., Uzunoglu, A., Sun, C.-J., Liu, Y., Ferreira, P., Li, W., et al. (2016) · ACS Catalysis · doi:10.1021/acscatal.5b02722 · Cited by 209
Metadata
- Authors
- Ni, Z. H., Wang, H. M., Ma, Y., Kasim, J., Wu, Y. H., & Shen, Z. X.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2008-05-01
- Volume
- 2
- Issue
- 5
- Pages
- 1033-1039
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2017283704
- Cited by
- 317
- References
- 4
- FWCI
- 9.94
- Type
- journal article
- Language
- en
- Open access
- green
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- Ni, Z. H., Wang, H. M., Ma, Y., Kasim, J., Wu, Y. H., & Shen, Z. X. (2008). Tunable Stress and Controlled Thickness Modification in Graphene by Annealing. ACS Nano. https://doi.org/10.1021/nn800031m
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