The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening
Abstract
Graphene was deposited on a transparent and flexible substrate, and tensile strain up to approximately 0.8% was loaded by stretching the substrate in one direction. Raman spectra of strained graphene show significant red shifts of 2D and G band (-27.8 and -14.2 cm(-1) per 1% strain, respectively) because of the elongation of the carbon-carbon bonds. This indicates that uniaxial strain has been successfully applied on graphene. We also proposed that, by applying uniaxial strain on graphene, tunable band gap at K point can be realized. First-principle calculations predicted a band-gap opening of approximately 300 meV for graphene under 1% uniaxial tensile strain. The strained graphene provides an alternative way to experimentally tune the band gap of graphene, which would be more efficient and more controllable than other methods that are used to open the band gap in graphene. Moreover, our results suggest that the flexible substrate is ready for such a strain process, and Raman spectroscopy can be used as an ultrasensitive method to determine the strain.
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Cites
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
Kresse, G., & Furthmüller, J. (1996) · Physical Review B · doi:10.1103/physrevb.54.11169 · Cited by 123,652
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033 · cited 1×
“Different attempts have been made by researchers, such as patterning graphene into nanoribbon,(3) forming graphene quantum dots,(2) making use of multilayer graphene sheets and applying an external electrical field.(4) According to the carbon nanotubes (CNTs) study, the strain will dramatically change the electronic s…”
Method
Cited by
Raman spectroscopy as a versatile tool for studying the properties of graphene
Ferrari, A. C., & Basko, D. M. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.46 · Cited by 7,405
Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering
Guinea, F., Katsnelson, M. I., & Geim, A. K. (2010) · Nature Physics · doi:10.1038/nphys1420 · Cited by 1,913
Tight-binding approach to uniaxial strain in graphene
Pereira, V. M., Castro Neto, A. H., & Peres, N. M. R. (2009) · Physical Review B · doi:10.1103/physrevb.80.045401 · Cited by 1,350
Graphene for Controlled and Accelerated Osteogenic Differentiation of Human Mesenchymal Stem Cells
Nayak, T. R., Andersen, H., Makam, V. S., Khaw, C., Bae, S., Xu, X., Ee, P.-L. R., Ahn, J.-H., Hong, B. H., Pastorin, G., et al. (2011) · ACS Nano · doi:10.1021/nn200500h · Cited by 916
Two-dimensional transistors beyond graphene and TMDCs
Liu, Y., Duan, X., Huang, Y., & Duan, X. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00318a · Cited by 474
Metadata
- Authors
- Ni, Z. H., Yu, T., Lu, Y. H., Wang, Y. Y., Feng, Y. P., & Shen, Z. X.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2008-10-30
- Volume
- 2
- Issue
- 11
- Pages
- 2301-2305
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2093603993
- Cited by
- 1,627
- References
- 4
- FWCI
- 25.43
- Type
- journal article
- Language
- en
- Open access
- closed
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