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Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors
Abstract
The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photoconductive characteristics of In2Se3 individual nanowires are first investigated. The electrical characterization of a single In2Se3 nanowire verifies an intrinsic n-type semiconductor behavior. These single-crystalline In2Se3 nanowires are then assembled in visible-light sensors which demonstrate a fast, reversible, and stable response. The high photosensitivity and quick photoresponse are attributed to the superior single-crystal quality and large surface-to-volume ratio resulting in fewer recombination barriers in nanostructures. These excellent performances clearly demonstrate the possibility of using In2Se3 nanowires in next-generation sensors and detectors for commercial, military, and space applications.
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Self-citation
Metadata
- Authors
- Zhai, T., Fang, X., Liao, M., Xu, X., Li, L., Liu, B., Koide, Y., Ma, Y., Yao, J., Bando, Y., & Golberg, D.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-02-10
- Volume
- 4
- Issue
- 3
- Pages
- 1596-1602
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2069776887
- Cited by
- 305
- References
- 34
- FWCI
- 11.58
- Type
- journal article
- Language
- en
- Open access
- closed
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