Cited by 680Topological Materials and PhenomenaGraphene research and applications2D Materials and Applications

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Topological valley transport at bilayer graphene domain walls

Ju, Long, Shi, Zhiwen, Nair, Nityan, Lv, Yinchuan, Jin, Chenhao, Velasco, Jairo, Ojeda-Aristizabal, Claudia, Bechtel, Hans A., Martin, Michael C., Zettl, Alex, Analytis, James, Wang, Feng·2015·Nature

DOI 10.1038/nature14364

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Abstract

Electron valley, a degree of freedom that is analogous to spin, can lead to novel topological phases in bilayer graphene. A tunable bandgap can be induced in bilayer graphene by an external electric field, and such gapped bilayer graphene is predicted to be a topological insulating phase protected by no-valley mixing symmetry, featuring quantum valley Hall effects and chiral edge states. Observation of such chiral edge states, however, is challenging because inter-valley scattering is induced by atomic-scale defects at real bilayer graphene edges. Recent theoretical work has shown that domain walls between AB- and BA-stacked bilayer graphene can support protected chiral edge states of quantum valley Hall insulators. Here we report an experimental observation of ballistic (that is, with no scattering of electrons) conducting channels at bilayer graphene domain walls. We employ near-field infrared nanometre-scale microscopy (nanoscopy) to image in situ bilayer graphene layer-stacking domain walls on device substrates, and we fabricate dual-gated field effect transistors based on the domain walls. Unlike single-domain bilayer graphene, which shows gapped insulating behaviour under a vertical electrical field, bilayer graphene domain walls feature one-dimensional valley-polarized conducting channels with a ballistic length of about 400 nanometres at 4 kelvin. Such topologically protected one-dimensional chiral states at bilayer graphene domain walls open up opportunities for exploring unique topological phases and valley physics in graphene.

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Authors: Ju, L., Shi, Z., Nair, N., Lv, Y., Jin, C., Velasco, J., Ojeda-Aristizabal, C., Bechtel, H. A., Martin, M. C., Zettl, A., Analytis, J., & Wang, F.
Affiliations: University of California, Berkeley (US)
Lawrence Berkeley National Laboratory (US)
Corresponding author: Wang, Feng
ORCID: Ju, Long
Shi, Zhiwen
Jin, Chenhao
Velasco, Jairo
Bechtel, Hans A.
Martin, Michael C.
Zettl, Alex
Analytis, James
Wang, Feng
Venue: Nature
Publisher: Springer Science and Business Media LLC
Published: 2015-04
Volume: 520
Issue: 7549
Pages: 650-655
ISSN: 0028-0836 (ISSN-L)
1476-4687
DOI: 10.1038/nature14364
OpenAlex: W1996794882
Cited by: 680
References: 33
Citations by year: 2026: 31 · 2025: 59 · 2024: 58 · 2023: 56 · 2022: 61 · 2021: 74 · 2020: 80 · 2019: 75 · 2018: 77 · 2017: 58 · 2016: 37 · 2015: 14
FWCI: 31.51
Type: journal article
Language: en
Open access: closed
Licence: www.springer.com/tdm (tdm)
Locations: Nature (publishedVersion)
PubMed (publishedVersion)
Topics: Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Topological Materials and Phenomena
Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
Keywords: bilayer graphene, domain walls, valley transport, valley polarization, quantum valley Hall effect, chiral edge states, topological insulators, ballistic transport, field-effect transistors, valley physics

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Topological valley transport at bilayer graphene domain walls

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