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Topological valley transport at bilayer graphene domain walls
Abstract
Electron valley, a degree of freedom that is analogous to spin, can lead to novel topological phases in bilayer graphene. A tunable bandgap can be induced in bilayer graphene by an external electric field, and such gapped bilayer graphene is predicted to be a topological insulating phase protected by no-valley mixing symmetry, featuring quantum valley Hall effects and chiral edge states. Observation of such chiral edge states, however, is challenging because inter-valley scattering is induced by atomic-scale defects at real bilayer graphene edges. Recent theoretical work has shown that domain walls between AB- and BA-stacked bilayer graphene can support protected chiral edge states of quantum valley Hall insulators. Here we report an experimental observation of ballistic (that is, with no scattering of electrons) conducting channels at bilayer graphene domain walls. We employ near-field infrared nanometre-scale microscopy (nanoscopy) to image in situ bilayer graphene layer-stacking domain walls on device substrates, and we fabricate dual-gated field effect transistors based on the domain walls. Unlike single-domain bilayer graphene, which shows gapped insulating behaviour under a vertical electrical field, bilayer graphene domain walls feature one-dimensional valley-polarized conducting channels with a ballistic length of about 400 nanometres at 4 kelvin. Such topologically protected one-dimensional chiral states at bilayer graphene domain walls open up opportunities for exploring unique topological phases and valley physics in graphene.
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“It is seen that the propagating directions of an edge state for K and K′ valleys are exactly opposite, no matter at an AB-type or BA-type domain wall. This is a manifestation of valley-chirality of the valley-Hall effect, in other words, the valley-polarized edge states are locked to one propagating direction in the absence of inter-valley scattering14,20.”
From Direct observation of valley-polarized topological edge states in designer surface plasmon crystals (2017) · cites this paper as [14]
Citations
Cites
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Quantum Spin Hall Effect in Graphene
Kane, C. L., & Mele, E. J. (2005) · Physical Review Letters · doi:10.1103/physrevlett.95.226801 · Cited by 8,197
Electronic Transport in Mesoscopic Systems
Datta, S. (1995) · doi:10.1017/cbo9780511805776 · Cited by 7,704
Quantum Spin Hall Insulator State in HgTe Quantum Wells
König, M., Wiedmann, S., Brüne, C., Roth, A., Buhmann, H., Molenkamp, L. W., Qi, X.-L., & Zhang, S.-C. (2007) · Science · doi:10.1126/science.1148047 · Cited by 6,151
Direct observation of a widely tunable bandgap in bilayer graphene
Zhang, Y., Tang, T., Girit, Ç., Hao, Z., Martin, M. C., Zettl, A. K., Crommie, M. F., Shen, Y. R., & Wang, F. (2009) · Nature · doi:10.1038/nature08105 · Cited by 3,639
Self-citationOne-Dimensional Electrical Contact to a Two-Dimensional Material
Wang, L., Meric, I., Huang, P. Y., Gao, Q., Gao, Y., Tran, H., Taniguchi, T., Watanabe, K., Campos, L. M., Muller, D. A., et al. (2013) · Science · doi:10.1126/science.1244358 · Cited by 3,064
Gate-tuning of graphene plasmons revealed by infrared nano-imaging
Fei, Z., Rodin, A. S., Andreev, G. O., Bao, W., McLeod, A. S., Wagner, M., Zhang, L. M., Zhao, Z., Thiemens, M. H., Dominguez, G., et al. (2012) · Nature · doi:10.1038/nature11253 · Cited by 2,136
Optical nano-imaging of gate-tunable graphene plasmons
Chen, J., Badioli, M., Alonso‐González, P., Thongrattanasiri, S., Huth, F., Osmond, J., Spasenović, M., Centeno, A., Pesquera, A., Godignon, P., et al. (2012) · Nature · doi:10.1038/nature11254 · Cited by 2,114
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033
Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene
Novoselov, K. S., McCann, E., Morozov, S. V., Fal’ko, V. I., Katsnelson, M. I., Zeitler, U., Jiang, D., Schedin, F., & Geim, A. K. (2006) · Nature Physics · doi:10.1038/nphys245 · Cited by 1,967
Gate-induced insulating state in bilayer graphene devices
Oostinga, J. B., Heersche, H. B., Liu, X., Morpurgo, A. F., & Vandersypen, L. M. K. (2007) · Nature Materials · doi:10.1038/nmat2082 · Cited by 1,665
Graphene Bilayer with a Twist: Electronic Structure
dos Santos, J. M. B. L., Peres, N. M. R., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.256802 · Cited by 1,552
Asymmetry gap in the electronic band structure of bilayer graphene
McCann, E. (2006) · Physical Review B · doi:10.1103/physrevb.74.161403 · Cited by 1,275
Near-field microscopy by elastic light scattering from a tip
Keilmann, F., & Hillenbrand, R. (2004) · Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences · doi:10.1098/rsta.2003.1347 · Cited by 737
Ab initiotheory of gate induced gaps in graphene bilayers
Min, H., Sahu, B. R., Banerjee, S. K., & MacDonald, A. H. (2007) · Physical Review B · doi:10.1103/physrevb.75.155115 · Cited by 586
Strain solitons and topological defects in bilayer graphene
Alden, J. S., Tsen, A. W., Huang, P. Y., Hovden, R., Brown, L., Park, J., Muller, D. A., & McEuen, P. L. (2013) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1309394110 · Cited by 563
Topological Confinement in Bilayer Graphene
Martin, I., Blanter, Y. M., & Morpurgo, A. F. (2008) · Physical Review Letters · doi:10.1103/physrevlett.100.036804 · Cited by 525
Spontaneous Quantum Hall States in Chirally Stacked Few-Layer Graphene Systems
Zhang, F., Jung, J., Fiete, G. A., Niu, Q., & MacDonald, A. H. (2011) · Physical Review Letters · doi:10.1103/physrevlett.106.156801 · Cited by 480
Valley Chern numbers and boundary modes in gapped bilayer graphene
Zhang, F., MacDonald, A. H., & Melé, E. J. (2013) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1308853110 · Cited by 407
Edge States in Graphene: From Gapped Flat-Band to Gapless Chiral Modes
Yao, W., Yang, S. A., & Niu, Q. (2009) · Physical Review Letters · doi:10.1103/physrevlett.102.096801 · Cited by 406
Broken-Symmetry States in Doubly Gated Suspended Bilayer Graphene
Weitz, R. T., Allen, M., Feldman, B. E., Martin, J., & Yacoby, A. (2010) · Science · doi:10.1126/science.1194988 · Cited by 403
Imaging Stacking Order in Few-Layer Graphene
Lui, C. H., Li, Z., Chen, Z., Klimov, P. V., Brus, L. E., & Heinz, T. F. (2010) · Nano Letters · doi:10.1021/nl1032827 · Cited by 382
Transport spectroscopy of symmetry-broken insulating states in bilayer graphene
Velasco, J., Jing, L., Bao, W., Lee, Y., Kratz, P. A., Aji, V., Bockrath, M., Lau, C. N., Varma, C. M., Stillwell, R. L., et al. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2011.251 · Cited by 318
Self-citationDislocations in bilayer graphene
Butz, B., Dölle, C., Niekiel, F., Weber, K. A., Waldmann, D., Weber, H. B., Meyer, B., & Spiecker, E. (2013) · Nature · doi:10.1038/nature12780 · Cited by 245
The evolution of electronic structure in few-layer graphene revealed by optical spectroscopy
Mak, K. F., Sfeir, M. Y., Misewich, J. A., & Heinz, T. F. (2010) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.1004595107 · Cited by 236
Weak Localization in Bilayer Graphene
Gorbachev, R., Tikhonenko, F. V., Mayorov, A. S., Horsell, D. W., & Savchenko, A. K. (2007) · Physical Review Letters · doi:10.1103/physrevlett.98.176805 · Cited by 234
Valley-Hall kink and edge states in multilayer graphene
Jung, J., Zhang, F., Qiao, Z., & MacDonald, A. H. (2011) · Physical Review B · doi:10.1103/physrevb.84.075418 · Cited by 180
Topological Edge States at a Tilt Boundary in Gated Multilayer Graphene
Vaezi, A., Liang, Y., Ngai, D. H., Yang, L., & Kim, E.-A. (2013) · Physical Review X · doi:10.1103/physrevx.3.021018 · Cited by 173
Electronic Structure of Multilayer Graphene
Min, H., & MacDonald, A. H. (2008) · Progress of Theoretical Physics Supplement · doi:10.1143/ptps.176.227 · Cited by 171
Evidence for a spin phase transition at charge neutrality in bilayer graphene
Maher, P., Dean, C. R., Young, A. F., Taniguchi, T., Watanabe, K., Shepard, K. L., Hone, J., & Kim, P. (2013) · Nature Physics · doi:10.1038/nphys2528 · Cited by 160
Symmetry-protected topological phases in noninteracting fermion systems
Wen, X.-G. (2012) · Physical Review B · doi:10.1103/physrevb.85.085103 · Cited by 127
Charge Transport in Dual Gated Bilayer Graphene with Corbino Geometry
Yan, J., & Fuhrer, M. S. (2010) · Nano Letters · doi:10.1021/nl102459t · Cited by 91
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Colloquium : Topological band theory
Bansil, A., Lin, H., & Das, T. (2016) · Reviews of Modern Physics · doi:10.1103/revmodphys.88.021004 · Cited by 1,587
Two-dimensional topological photonics
Khanikaev, A. B., & Shvets, G. B. (2017) · Nature Photonics · doi:10.1038/s41566-017-0048-5 · Cited by 1,002
Observation of topological valley transport of sound in sonic crystals
Lu, J., Qiu, C., Ye, L., Fan, X., Ke, M., Zhang, F., & Liu, Z. (2017) · Nature Physics · doi:10.1038/nphys3999 · Cited by 985
Towards properties on demand in quantum materials
Basov, D. N., Averitt, R. D., & Hsieh, D. (2017) · Nature Materials · doi:10.1038/nmat5017 · Cited by 946
Metadata
- Authors
- Ju, L., Shi, Z., Nair, N., Lv, Y., Jin, C., Velasco, J., Ojeda-Aristizabal, C., Bechtel, H. A., Martin, M. C., Zettl, A., Analytis, J., & Wang, F.
- Affiliations
- University of California, Berkeley (US)
- Lawrence Berkeley National Laboratory (US)
- Corresponding author
- Wang, Feng
- ORCID
- Venue
- Nature
- Published
- 2015-04
- Volume
- 520
- Issue
- 7549
- Pages
- 650-655
- ISSN
- 0028-0836 (ISSN-L)
- 1476-4687
- OpenAlex
- W1996794882
- Cited by
- 680
- References
- 33
- Citations by year
- 2026: 31 · 2025: 59 · 2024: 58 · 2023: 56 · 2022: 61 · 2021: 74 · 2020: 80 · 2019: 75 · 2018: 77 · 2017: 58 · 2016: 37 · 2015: 14
- FWCI
- 31.51
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.springer.com/tdm (tdm)
- Locations
- Nature (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Topological Materials and Phenomena
- Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Keywords
- bilayer graphene, domain walls, valley transport, valley polarization, quantum valley Hall effect, chiral edge states, topological insulators, ballistic transport, field-effect transistors, valley physics
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