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Cited by 334

The DOI matches its Crossref record; 84 of the 84 references it cites were found in a registry or an index.

Atomically thin quantum light-emitting diodes

Open access
Palacios-Berraquero, Carmen, Barbone, Matteo, Kara, Dhiren M., Chen, Xiaolong, Goykhman, Ilya, Yoon, Duhee, Ott, Anna K., Beitner, Jan, Watanabe, Kenji, Taniguchi, Takashi, Ferrari, Andrea C., Atatüre, Mete·2016·Nature Communications

Abstract

Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

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Crossref · 10.1038/ncomms12978

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Metadata

Authors
Palacios-Berraquero, C., Barbone, M., Kara, D. M., Chen, X., Goykhman, I., Yoon, D., Ott, A. K., Beitner, J., Watanabe, K., Taniguchi, T., Ferrari, A. C., & Atatüre, M.
Venue
Nature Communications
Published
2016-09-26
Volume
7
Issue
1
Pages
12978-12978
ISSN
2041-1723 (ISSN-L)
OpenAlex
W2322193316
Cited by
334
References
84
FWCI
17.61
Type
journal article
Language
en
Open access
gold

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