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Cited by 1462D Materials and ApplicationsSemiconductor Lasers and Optical DevicesPhotonic and Optical Devices

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Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers

Open access
Shang, Jingzhi, Cong, Chunxiao, Wang, Zilong, Peimyoo, Namphung, Wu, Lishu, Zou, Chenji, Chen, Yu, Chin, Xin Yu, Wang, Jianpu, Soci, Cesare, Huang, Wei, Yu, Ting·2017·Nature Communications
DOI 10.1038/s41467-017-00743-wPMC PMC5599555
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Abstract

Abstract Two-dimensional (2D) semiconductors are opening a new platform for revitalizing widely spread optoelectronic applications. The realisation of room-temperature vertical 2D lasing from monolayer semiconductors is fundamentally interesting and highly desired for appealing on-chip laser applications such as optical interconnects and supercomputing. Here, we present room-temperature low-threshold lasing from 2D semiconductor activated vertical-cavity surface-emitting lasers (VCSELs) under continuous-wave pumping. 2D lasing is achieved from a 2D semiconductor. Structurally, dielectric oxides were used to construct the half-wavelength-thick cavity and distributed Bragg reflectors, in favour of single-mode operation and ultralow optical loss; in the cavity centre, the direct-bandgap monolayer WS2was embedded as the gain medium, compatible with the planar VCSEL configuration and the monolithic integration technology. This work demonstrates 2D semiconductor activated VCSELs with desirable emission characteristics, which represents a major step towards practical optoelectronic applications of 2D semiconductor lasers.

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Crossref · 10.1038/s41467-017-00743-w

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Figures

Fig. 1 Structure of a 2D semiconductor embedded microcavity and its reflection. a Schematic of a 2D semiconductor embedded microcavity on the SiO2/Si substrate consisting of 12.5 pairs of bottom TiO2/SiO2 distributed Bragg reflectors (DBRs), half-wavelength-thick SiO2 cavity with embedded monolayer WS2 and 8.5 pairs of top DBRs. b Representative scanning electron microscope image of the cross-section. The inset shows the zoom-in image. Scale bars in b and its inset represent 500 nm. c, d Reflection spectra of monolayer WS2 embedded microcavity (in blue) and the blank microcavity region (in black) in the spectral range from 500 to 800 nm, respectively; The insets show the enlarged spectra together with the Lorentzian fits (in red) in the cavity-mode regions, respectively
Fig. 1 Structure of a 2D semiconductor embedded microcavity and its reflection. a Schematic of a 2D semiconductor embedded microcavity on the SiO2/Si substrate consisting of 12.5 pairs of bottom TiO2/SiO2 distributed Bragg reflectors (DBRs), half-wavelength-thick SiO2 cavity with embedded monolayer WS2 and 8.5 pairs of top DBRs. b Representative scanning electron microscope image of the cross-section. The inset shows the zoom-in image. Scale bars in b and its inset represent 500 nm. c, d Reflection spectra of monolayer WS2 embedded microcavity (in blue) and the blank microcavity region (in black) in the spectral range from 500 to 800 nm, respectively; The insets show the enlarged spectra together with the Lorentzian fits (in red) in the cavity-mode regions, respectivelyCC BY · PubMed Central
Fig. 2 Room-temperature single-mode vertical lasing. a Optical image of an isolated monolayer WS2 on the half cavity marked by the red dashed circle and b spatially resolved photoluminescence (PL) intensity mapping of the complete microcavity sample (integrated in the spectral range from 635.5 to 637.5 nm). The scale bars represent 2 µm. c The PL spectrum collected at the sample centre and at the excitation power of 100 nW. d PL spectra collected at the sample centre under varied excitation powers < 10 nW. The grey dashed lines are Lorentzian fits to the data. e–g PL output intensity, width and position as functions of excitation power, respectively. Error bars are extracted from Lorentzian fits. In e, three regions with different slopes are labelled as spontaneous emission (SE, blue), superlinear amplification (SLA, yellow) and lasing (green), respectively, where the dashed black line indicates the threshold region. The extracted slopes of SE, SLA and lasing are about 0.6, 1.6 and 1.0, respectively. With the increasing excitation power, the spectral width narrows f, while the position remains stable g
Fig. 2 Room-temperature single-mode vertical lasing. a Optical image of an isolated monolayer WS2 on the half cavity marked by the red dashed circle and b spatially resolved photoluminescence (PL) intensity mapping of the complete microcavity sample (integrated in the spectral range from 635.5 to 637.5 nm). The scale bars represent 2 µm. c The PL spectrum collected at the sample centre and at the excitation power of 100 nW. d PL spectra collected at the sample centre under varied excitation powers < 10 nW. The grey dashed lines are Lorentzian fits to the data. e–g PL output intensity, width and position as functions of excitation power, respectively. Error bars are extracted from Lorentzian fits. In e, three regions with different slopes are labelled as spontaneous emission (SE, blue), superlinear amplification (SLA, yellow) and lasing (green), respectively, where the dashed black line indicates the threshold region. The extracted slopes of SE, SLA and lasing are about 0.6, 1.6 and 1.0, respectively. With the increasing excitation power, the spectral width narrows f, while the position remains stable gCC BY · PubMed Central
Fig. 3 Confocal photoluminescence scanning along Z-direction. a Normalised photoluminescence spectra collected at the cavity centre (black), surface (red) and 5.1 µm (i.e., the distance above the cavity centre, blue), respectively. The used excitation power is 100 nW. The inset shows the emission schematic. b Comparison of normalised integrated intensities of the lasing emission (LE) and the leaked spontaneous emission band (LSE) at various Z-positions. Error bars are extracted from single and double Lorentzian fits to the confocal spectra. c The lasing intensity ratio to the detected total light output as a function of Z-position. The defined Z-direction is perpendicular to the sample surface. I LE and I LSE represent the integrated intensities of LE and LSE, respectively
Fig. 3 Confocal photoluminescence scanning along Z-direction. a Normalised photoluminescence spectra collected at the cavity centre (black), surface (red) and 5.1 µm (i.e., the distance above the cavity centre, blue), respectively. The used excitation power is 100 nW. The inset shows the emission schematic. b Comparison of normalised integrated intensities of the lasing emission (LE) and the leaked spontaneous emission band (LSE) at various Z-positions. Error bars are extracted from single and double Lorentzian fits to the confocal spectra. c The lasing intensity ratio to the detected total light output as a function of Z-position. The defined Z-direction is perpendicular to the sample surface. I LE and I LSE represent the integrated intensities of LE and LSE, respectivelyCC BY · PubMed Central
Fig. 4 2D lasing from monolayer WS2 flakes. a Optical image of three 1L-WS2 flakes on the half cavity and b spatially resolved PL intensity image of the complete microcavity samples. The PL intensity is integrated from 600 to 645 nm. Line profile analysis was carried out along the marked lines. L and R indicate left and right sides, respectively. The scale bars represent 3 µm. c The series of PL spectra taken along four marked lines with a step size of 500 nm. The colour traces from bottom to top correspond to the spectra taken from left to right of each scanning line in b. The dominant lasing modes are highlighted in cyan. d Statistics of positions and widths of narrow emission bands in 67 spectra sampling from three flakes
Fig. 4 2D lasing from monolayer WS2 flakes. a Optical image of three 1L-WS2 flakes on the half cavity and b spatially resolved PL intensity image of the complete microcavity samples. The PL intensity is integrated from 600 to 645 nm. Line profile analysis was carried out along the marked lines. L and R indicate left and right sides, respectively. The scale bars represent 3 µm. c The series of PL spectra taken along four marked lines with a step size of 500 nm. The colour traces from bottom to top correspond to the spectra taken from left to right of each scanning line in b. The dominant lasing modes are highlighted in cyan. d Statistics of positions and widths of narrow emission bands in 67 spectra sampling from three flakesCC BY · PubMed Central

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Metadata

Authors
Shang, J., Cong, C., Wang, Z., Peimyoo, N., Wu, L., Zou, C., Chen, Y., Chin, X. Y., Wang, J., Soci, C., Huang, W., & Yu, T.
Affiliations
  • Nanjing Tech University (CN)
  • Fudan University (CN)
  • Nanyang Technological University (SG)
Corresponding author
  • Huang, Wei
  • Yu, Ting
ORCID
Venue
Nature Communications
Publisher
Springer Science and Business Media LLC
Published
2017-09-14
Volume
8
Issue
1
Pages
543-543
ISSN
2041-1723 (ISSN-L)
DOI
10.1038/s41467-017-00743-w
PMC
PMC5599555
OpenAlex
W2754035931
Cited by
145
References
42
Citations by year
2026: 6 · 2025: 12 · 2024: 18 · 2023: 15 · 2022: 17 · 2021: 18 · 2020: 21 · 2019: 21 · 2018: 17
FWCI
6.81
Type
journal article
Language
en
Open access
Licence
Locations
  • Nature Communications (publishedVersion, cc-by)
  • Europe PMC (PubMed Central) (publishedVersion, cc-by)
  • PubMed Central (publishedVersion, cc-by)
  • PubMed (publishedVersion)
  • RePEc: Research Papers in Economics (submittedVersion)
  • DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion)
  • DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
  • DR-NTU (Nanyang Technological University) (submittedVersion, cc-by)
Funders
  • Natural Science Foundation of Shanghai (16ZR1402500, BM2012010)
  • Synergetic Innovation Center for Organic Electronics and Information Displays (61136003)
  • National Natural Science Foundation of China (51173081, 2015CB932200, BM2012010, YX03001, IRT1148, 61136003)
  • Ministry of Education of the People's Republic of China (2015CB932200, YX03001, IRT1148)
  • Government of Jiangsu Province (BM2012010, YX03001)
  • Ministry of Education, India
  • Natural Science Foundation of Jiangsu Province (61136003, BM2012010, YX03001)
  • Priority Academic Program Development of Jiangsu Higher Education Institutions (YX03001, IRT1148)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
Keywords
vertical-cavity surface-emitting lasers, two-dimensional semiconductors, monolayer WS2, room-temperature lasing, low-threshold lasing, distributed Bragg reflector, continuous-wave pumping, single-mode operation, monolithic integration

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