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Cited by 249Photorefractive and Nonlinear OpticsPhotonic and Optical DevicesOptical and Acousto-Optic Technologies

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Lithium tantalate photonic integrated circuits for volume manufacturing

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Wang, Chengli, Li, Zihan, Riemensberger, Johann, Lihachev, Grigory, Churaev, Mikhail, Kao, Wil, Ji, Xinru, Zhang, Junyin, Blesin, Terence, Davydova, Alisa, Chen, Yang, Huang, Kai, Wang, Xi, Ou, Xin, Kippenberg, Tobias J.·2024·Nature
DOI 10.1038/s41586-024-07369-1PMC PMC11111398
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Abstract

Abstract Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO 3 ) have demonstrated the vast capabilities of materials with a high Pockels coefficient 1,2 . They enable linear and high-speed modulators operating at complementary metal–oxide–semiconductor voltage levels 3 to be used in applications including data-centre communications 4 , high-performance computing and photonic accelerators for AI 5 . However, industrial use of this technology is hindered by the high cost per wafer and the limited wafer size. The high cost results from the lack of existing high-volume applications in other domains of the sort that accelerated the adoption of silicon-on-insulator (SOI) photonics, which was driven by vast investment in microelectronics. Here we report low-loss PICs made of lithium tantalate (LiTaO 3 ), a material that has already been adopted commercially for 5G radiofrequency filters 6 and therefore enables scalable manufacturing at low cost, and it has equal, and in some cases superior, properties to LiNbO 3 . We show that LiTaO 3 can be etched to create low-loss (5.6 dB m −1 ) PICs using a deep ultraviolet (DUV) stepper-based manufacturing process 7 . We demonstrate a LiTaO 3 Mach–Zehnder modulator (MZM) with a half-wave voltage–length product of 1.9 V cm and an electro-optic bandwidth of up to 40 GHz. In comparison with LiNbO 3 , LiTaO 3 exhibits a much lower birefringence, enabling high-density circuits and broadband operation over all telecommunication bands. Moreover, the platform supports the generation of soliton microcombs. Our work paves the way for the scalable manufacture of low-cost and large-volume next-generation electro-optical PICs.

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Figures

Fig. 1 LTOI substrates and optical waveguides. a, Schematic of the LTOI wafer-bonding workflow showing hydrogen-ion implantation, bonding, splitting and chemical mechanical polishing (CMP). b, Photograph of the bonded wafer demonstrating uniform and defect-free bonding. c, Thickness map of the LiTaO3 thin film on the wafer. The x,y axes represent the distance from the wafer centre. d, Atomic force micrograph of the LiTaO3 thin film surface. Scale bar, 500 nm. e, High-resolution scanning transmission electron-microscopy image of the LiTaO3–SiO2 bonding interface. The arrow represents the x-cut crystal orientation. Scale bar, 2 nm. f, Schematic of the fabrication workflow for LTOI optical waveguides, including DLC hard-mask deposition by plasma-enhanced chemical vapour deposition (PECVD) from the methane precursor, DLC dry etching through oxygen plasma, and LiTaO3 etching by argon ion-beam etching (IBE), followed by redeposition and mask removal. The layers are DLC (black), LiTaO3 (light blue), SiO2 (purple) and Si (grey). Spheres show C (black), O (red) and Ar+ (green). g, Colourized scanning electron micrograph (SEM) of LTOI microring resonator (blue). Scale bar, 50 μm. h, Colourized SEM of etched LTOI microring and bus waveguide coupling section. Scale bar, 2 μm. i, Colourized SEM of etched LTOI waveguide and sidewall. Scale bar, 2 μm. j, Colourized SEM cross-section of etched LTOI waveguide (blue) on top of SiO2 bottom cladding (purple). Scale bar, 500 nm.
Fig. 1 LTOI substrates and optical waveguides. a, Schematic of the LTOI wafer-bonding workflow showing hydrogen-ion implantation, bonding, splitting and chemical mechanical polishing (CMP). b, Photograph of the bonded wafer demonstrating uniform and defect-free bonding. c, Thickness map of the LiTaO3 thin film on the wafer. The x,y axes represent the distance from the wafer centre. d, Atomic force micrograph of the LiTaO3 thin film surface. Scale bar, 500 nm. e, High-resolution scanning transmission electron-microscopy image of the LiTaO3–SiO2 bonding interface. The arrow represents the x-cut crystal orientation. Scale bar, 2 nm. f, Schematic of the fabrication workflow for LTOI optical waveguides, including DLC hard-mask deposition by plasma-enhanced chemical vapour deposition (PECVD) from the methane precursor, DLC dry etching through oxygen plasma, and LiTaO3 etching by argon ion-beam etching (IBE), followed by redeposition and mask removal. The layers are DLC (black), LiTaO3 (light blue), SiO2 (purple) and Si (grey). Spheres show C (black), O (red) and Ar+ (green). g, Colourized scanning electron micrograph (SEM) of LTOI microring resonator (blue). Scale bar, 50 μm. h, Colourized SEM of etched LTOI microring and bus waveguide coupling section. Scale bar, 2 μm. i, Colourized SEM of etched LTOI waveguide and sidewall. Scale bar, 2 μm. j, Colourized SEM cross-section of etched LTOI waveguide (blue) on top of SiO2 bottom cladding (purple). Scale bar, 500 nm.CC BY · PubMed Central
Fig. 2 Optical characterization of LTOI PICs. a, Wafer-scale map of mean intrinsic loss, κ0/2π, for similar resonators. b, Normalized resonance transmission spectrum of an optical racetrack microresonator at 209.358 THz. c, Statistical distribution of intrinsic loss, κ0/2π, of the optical racetrack microresonator. Mean = 40.4 MHz, median = 36.4 MHz. d, Nonlinear optical-response measurement (solid red line) and fit (solid black line) of the thermo-optical (red dashed line) and Kerr (blue dashed line) nonlinear responses of the optical microresonator, demonstrating ultralow optical absorption loss. e, Illustration of the LiNbO3 (red) strongly negative uniaxial and LiTaO3 (blue) weakly positive uniaxial crystal birefringence. For LiTaO3, ordinary refractive index nLT.o = 2.119, extraordinary refractive index nLT.e = 2.123 and the difference ΔnLT = 0.004; for LiNbO3, ordinary refractive index nLN.o = 2.21, extraordinary refractive index nLN.e = 2.14 and the difference ΔnLN = −0.07. f, Illustration of the curve angle, θ, and fundamental transverse electric (TE00) and transverse magnetic (TM00) mode profiles in LTOI. Scale bar, 1 μm. g, Numerical simulation of fundamental TE00 and TM00 optical-mode effective refractive indices of LNOI (red) and LTOI (blue) as a function of the angle between the waveguide and the y axis of the x-cut LNOI or LTOI film. The reduced birefringence of LTOI precludes unwanted birefringent mixing between fundamental TE00 or TM00 modes in thick waveguides. Arrows indicate birefringent mode mixing. h, Dispersion profile of an LTOI racetrack microresonator with the waveguide cross-section 2 μm × 0.5 μm and a slab 100 nm thick. D1/2π = 82.234 GHz, D2/2π = 197.88 kHz. L, C, S, E and O telecommunication bands are marked with vertical dashed lines. i, Dispersion profile of an LNOI racetrack microresonator with similar cross-section and strong mode mixing at frequencies above 215 THz, which occupies the E-band and the O-band in the optical communication. D1/2π = 80.83 GHz, D2/2π = 105.72 kHz.
Fig. 2 Optical characterization of LTOI PICs. a, Wafer-scale map of mean intrinsic loss, κ0/2π, for similar resonators. b, Normalized resonance transmission spectrum of an optical racetrack microresonator at 209.358 THz. c, Statistical distribution of intrinsic loss, κ0/2π, of the optical racetrack microresonator. Mean = 40.4 MHz, median = 36.4 MHz. d, Nonlinear optical-response measurement (solid red line) and fit (solid black line) of the thermo-optical (red dashed line) and Kerr (blue dashed line) nonlinear responses of the optical microresonator, demonstrating ultralow optical absorption loss. e, Illustration of the LiNbO3 (red) strongly negative uniaxial and LiTaO3 (blue) weakly positive uniaxial crystal birefringence. For LiTaO3, ordinary refractive index nLT.o = 2.119, extraordinary refractive index nLT.e = 2.123 and the difference ΔnLT = 0.004; for LiNbO3, ordinary refractive index nLN.o = 2.21, extraordinary refractive index nLN.e = 2.14 and the difference ΔnLN = −0.07. f, Illustration of the curve angle, θ, and fundamental transverse electric (TE00) and transverse magnetic (TM00) mode profiles in LTOI. Scale bar, 1 μm. g, Numerical simulation of fundamental TE00 and TM00 optical-mode effective refractive indices of LNOI (red) and LTOI (blue) as a function of the angle between the waveguide and the y axis of the x-cut LNOI or LTOI film. The reduced birefringence of LTOI precludes unwanted birefringent mixing between fundamental TE00 or TM00 modes in thick waveguides. Arrows indicate birefringent mode mixing. h, Dispersion profile of an LTOI racetrack microresonator with the waveguide cross-section 2 μm × 0.5 μm and a slab 100 nm thick. D1/2π = 82.234 GHz, D2/2π = 197.88 kHz. L, C, S, E and O telecommunication bands are marked with vertical dashed lines. i, Dispersion profile of an LNOI racetrack microresonator with similar cross-section and strong mode mixing at frequencies above 215 THz, which occupies the E-band and the O-band in the optical communication. D1/2π = 80.83 GHz, D2/2π = 105.72 kHz.CC BY · PubMed Central
Fig. 3 Electro-optical tuning and switching in LTOI. a, Colourized SEM of LTOI (blue) racetrack optical microresonator with gold electrodes (yellow). Scale bar, 300 μm. b, Colourized SEM of pulley resonator and bus waveguide coupling section. Scale bar, 5 μm. c, Measured resonance shift as a result of tuning voltage. The linear fit indicates a voltage tuning response of 255 MHz V–1. Left inset: schematic of the measurement set-up for microresonator tuning measurement with phase-modulation (PM) sideband calibration. ECDL, external cavity diode laser; AFG, arbitrary frequency generator; OSC, oscilloscope; PD, fast photodiode. Right inset: normalized cavity transmission measurement showing electro-optical tuning of an LTOI resonance. Each colour step corresponds to an increase in DC tuning voltage of 5 V. d, Optical micrograph of 2.5 mm-long MZM. Scale bar, 200 μm. e, Colourized SEM of MZM waveguides and electrodes. Scale bar, 10 μm. f, Electro-optical bandwidth (S21 parameter, measured as the power ratio) of MZM for a device length of 2.5 mm at a wavelength of 1,550 nm. g, Normalized optical transmission as a function of applied voltage on travelling-wave electrodes at wavelengths of 1,310 nm and 1,550 nm, showing a voltage–length product,VπL, of 1.6 V cm at the O-band and 1.9 V cm at the C-band.
Fig. 3 Electro-optical tuning and switching in LTOI. a, Colourized SEM of LTOI (blue) racetrack optical microresonator with gold electrodes (yellow). Scale bar, 300 μm. b, Colourized SEM of pulley resonator and bus waveguide coupling section. Scale bar, 5 μm. c, Measured resonance shift as a result of tuning voltage. The linear fit indicates a voltage tuning response of 255 MHz V–1. Left inset: schematic of the measurement set-up for microresonator tuning measurement with phase-modulation (PM) sideband calibration. ECDL, external cavity diode laser; AFG, arbitrary frequency generator; OSC, oscilloscope; PD, fast photodiode. Right inset: normalized cavity transmission measurement showing electro-optical tuning of an LTOI resonance. Each colour step corresponds to an increase in DC tuning voltage of 5 V. d, Optical micrograph of 2.5 mm-long MZM. Scale bar, 200 μm. e, Colourized SEM of MZM waveguides and electrodes. Scale bar, 10 μm. f, Electro-optical bandwidth (S21 parameter, measured as the power ratio) of MZM for a device length of 2.5 mm at a wavelength of 1,550 nm. g, Normalized optical transmission as a function of applied voltage on travelling-wave electrodes at wavelengths of 1,310 nm and 1,550 nm, showing a voltage–length product,VπL, of 1.6 V cm at the O-band and 1.9 V cm at the C-band.CC BY · PubMed Central
Fig. 4 DKS generation in LTOI microresonators. a, Optical spectrum of a single soliton microcomb featuring a sech2-spectral profile with a 3 dB bandwidth of 4.9 THz, corresponding to an FWHM pulse duration of 63 fs at a pulse repetition rate, frep, of 81 GHz. Inset, the light generated during the rapid laser scan measured by filtering out the pump light. The soliton step is marked with light blue shading. Ipd, photodiode current. b, Optical spectrum of a single soliton with a repetition rate of 30.1 GHz; ΔTFWHM = 71 fs. Inset, the relative phase position inside the microresonator. c, Optical setup for soliton generation in x-cut LTOI microresonators. The orientation and TE polarization are also indicated in the schematic diagram of the fabricated LTOI chip. Rapid laser scans were generated using a single-sideband modulator (SSB) and voltage-controlled oscillator (VCO), continuous wave (CW) laser and an erbium-doped fibre amplifier (EDFA). FBG, fibre Bragg grating; FPC, fibre polarization controller. The soliton microcombs were analysed using an optical spectrum analyser (OSA) and the nonlinearly generated light and microwave beat notes were recorded with a PD and analysed with an OSC and electrical spectrum analyser (ESA), respectively. d, Variation of the Raman intensity with different LTOI crystal rotation angles. Inset, the angle between the orientation (z axis) and the polarization of the excitation laser. e, Optical spectrum of a three-soliton state with a repetition rate of 30.1 GHz. Inset, three solitons inside the microresonator. ΔTFWHM = 52 fs. f, Single-side band-phase noise-power spectral density (Sff) of a 30.1 GHz microwave beat note generated from the multisoliton state in e. Inset, spectrum of a microwave beat note with a resolution bandwidth of 30 Hz.
Fig. 4 DKS generation in LTOI microresonators. a, Optical spectrum of a single soliton microcomb featuring a sech2-spectral profile with a 3 dB bandwidth of 4.9 THz, corresponding to an FWHM pulse duration of 63 fs at a pulse repetition rate, frep, of 81 GHz. Inset, the light generated during the rapid laser scan measured by filtering out the pump light. The soliton step is marked with light blue shading. Ipd, photodiode current. b, Optical spectrum of a single soliton with a repetition rate of 30.1 GHz; ΔTFWHM = 71 fs. Inset, the relative phase position inside the microresonator. c, Optical setup for soliton generation in x-cut LTOI microresonators. The orientation and TE polarization are also indicated in the schematic diagram of the fabricated LTOI chip. Rapid laser scans were generated using a single-sideband modulator (SSB) and voltage-controlled oscillator (VCO), continuous wave (CW) laser and an erbium-doped fibre amplifier (EDFA). FBG, fibre Bragg grating; FPC, fibre polarization controller. The soliton microcombs were analysed using an optical spectrum analyser (OSA) and the nonlinearly generated light and microwave beat notes were recorded with a PD and analysed with an OSC and electrical spectrum analyser (ESA), respectively. d, Variation of the Raman intensity with different LTOI crystal rotation angles. Inset, the angle between the orientation (z axis) and the polarization of the excitation laser. e, Optical spectrum of a three-soliton state with a repetition rate of 30.1 GHz. Inset, three solitons inside the microresonator. ΔTFWHM = 52 fs. f, Single-side band-phase noise-power spectral density (Sff) of a 30.1 GHz microwave beat note generated from the multisoliton state in e. Inset, spectrum of a microwave beat note with a resolution bandwidth of 30 Hz.CC BY · PubMed Central
Extended Data Fig. 1 Optical loss of the acoustic and optical grade LTOI integrated photonic devices. (a) Photo of the bulk acoustic and optical grade LiTaO3 wafers. The black and yellow wafers are reductive and original acoustic grade LiTaO3 bulk wafers, respectively. The white wafers are optical grade. (b) Wafer map of the optical loss of LiTaO3 microresonators fabricated on acoustic grade LTOI wafers. The resonators are 2 μm wide racetracks with 80 GHz free spectral range. Figure shows the most probable values of the intrinsic loss rate κ0/2π for a resonator from every field. The test chip from one field on the acoustic grade wafer was damaged before the measurement (shown as NA). (c) XRD rocking curve measured on the LiTaO3 (110) Bragg peak of the acoustic grade LTOI wafer after bonding and polishing. (d,e) Same as (b,c) but for optical grade LTOI wafer.
Extended Data Fig. 1 Optical loss of the acoustic and optical grade LTOI integrated photonic devices. (a) Photo of the bulk acoustic and optical grade LiTaO3 wafers. The black and yellow wafers are reductive and original acoustic grade LiTaO3 bulk wafers, respectively. The white wafers are optical grade. (b) Wafer map of the optical loss of LiTaO3 microresonators fabricated on acoustic grade LTOI wafers. The resonators are 2 μm wide racetracks with 80 GHz free spectral range. Figure shows the most probable values of the intrinsic loss rate κ0/2π for a resonator from every field. The test chip from one field on the acoustic grade wafer was damaged before the measurement (shown as NA). (c) XRD rocking curve measured on the LiTaO3 (110) Bragg peak of the acoustic grade LTOI wafer after bonding and polishing. (d,e) Same as (b,c) but for optical grade LTOI wafer.CC BY · PubMed Central
Extended Data Fig. 2 Linear loss and dispersion measurement. (a) Optical micrograph of LTOI spiral (D101_LT_A2_F2_C7_Spiral5) with a length of 39 cm and a waveguide cross-section 1.75 μm × 0.6 μm. The rectangular footprint is 5 × 2 mm2. (b) Segmented Fourier transform of the optical frequency domain reflectometry (OFDR) signal showing the strength of the coherent optical backreflection as a function of the optical length. Colors encode the central wavelength of the segments and correspond to illustrations in panel (d). An optical distance of 88 cm can be identified according to the reflection peaks of the front and back facets of the waveguide spiral chip. A minor fabrication defect is found at an optical distance of 3.36 m. (c) Same as panel (b) but individual traces offset by 3 dB to highlight the linear fit for extraction of the optical propagation loss. (d) Optical propagation losses extracted from the fits in panel (c) showing a propagation loss of around 8 dB/m in the optical C- and L-bands and around 10 dB/m in the O-band. (e,f) Same as panel (b) but highlighting the regions around the front and back facet reflections of the chip. The colored markers point to the extracted position of the facet and are used to infer the dispersion of the spiral. (f) Frequency-dependent optical group velocity vg=β1⁻¹c=2.25 of the waveguide spiral and fit of the anomalous dispersion profile of β2 = -163 fs mm−2. The dispersion contribution of the 300 μm long tapers is neglected.
Extended Data Fig. 2 Linear loss and dispersion measurement. (a) Optical micrograph of LTOI spiral (D101_LT_A2_F2_C7_Spiral5) with a length of 39 cm and a waveguide cross-section 1.75 μm × 0.6 μm. The rectangular footprint is 5 × 2 mm2. (b) Segmented Fourier transform of the optical frequency domain reflectometry (OFDR) signal showing the strength of the coherent optical backreflection as a function of the optical length. Colors encode the central wavelength of the segments and correspond to illustrations in panel (d). An optical distance of 88 cm can be identified according to the reflection peaks of the front and back facets of the waveguide spiral chip. A minor fabrication defect is found at an optical distance of 3.36 m. (c) Same as panel (b) but individual traces offset by 3 dB to highlight the linear fit for extraction of the optical propagation loss. (d) Optical propagation losses extracted from the fits in panel (c) showing a propagation loss of around 8 dB/m in the optical C- and L-bands and around 10 dB/m in the O-band. (e,f) Same as panel (b) but highlighting the regions around the front and back facet reflections of the chip. The colored markers point to the extracted position of the facet and are used to infer the dispersion of the spiral. (f) Frequency-dependent optical group velocity vg=β1⁻¹c=2.25 of the waveguide spiral and fit of the anomalous dispersion profile of β2 = -163 fs mm−2. The dispersion contribution of the 300 μm long tapers is neglected.CC BY · PubMed Central
Extended Data Fig. 3 Photorefractive effect comparison between LiTaO3 and LiNbO3. (a) Schematic of resonance drifting measurement setup. A pump laser is Pound-Drever-Hall (PDH) locked to the resonance microresonators and the wavelength is monitored by a wavemeter. (b) Photorefractive-induced resonance frequency shift in LNOI (red) and LTOI (blue) microresonators.
Extended Data Fig. 3 Photorefractive effect comparison between LiTaO3 and LiNbO3. (a) Schematic of resonance drifting measurement setup. A pump laser is Pound-Drever-Hall (PDH) locked to the resonance microresonators and the wavelength is monitored by a wavemeter. (b) Photorefractive-induced resonance frequency shift in LNOI (red) and LTOI (blue) microresonators.CC BY · PubMed Central
Extended Data Fig. 4 Raman intensity comparison between LNOI and LTOI. Raman spectra of (a) x-cut LNOI and (b) LTOI for the excitation laser with polarization angles 0°, 30°, 60°, 90° with respects to the z-axis. (c) Variation of the Raman intensity ratio of LNOI and LTOI for the excitation laser with different polarization angles. The Raman intensity is obtained by integrating all peaks that correspond to LiNbO3 or LiTaO3 and is normalized. Inset illustrates the angles between the orientation and the polarization of the excitation laser.
Extended Data Fig. 4 Raman intensity comparison between LNOI and LTOI. Raman spectra of (a) x-cut LNOI and (b) LTOI for the excitation laser with polarization angles 0°, 30°, 60°, 90° with respects to the z-axis. (c) Variation of the Raman intensity ratio of LNOI and LTOI for the excitation laser with different polarization angles. The Raman intensity is obtained by integrating all peaks that correspond to LiNbO3 or LiTaO3 and is normalized. Inset illustrates the angles between the orientation and the polarization of the excitation laser.CC BY · PubMed Central
Extended Data Fig. 5 Scalable manufacturing process based on DUV stepper lithography for thick high speed gold electrodes. (a) Fabrication process flow of the electrodes. (b) Scanning electron micrography (SEM) of the cross-section of a silicon dummy wafer after step 2 in panel (a). The photoresist is colored in red, silicon dioxide in pink, and silicon in blue. (c) SEM of fabricated electrodes and LiTaO3 waveguide. The gold is colored in yellow and LiTaO3 in light blue.
Extended Data Fig. 5 Scalable manufacturing process based on DUV stepper lithography for thick high speed gold electrodes. (a) Fabrication process flow of the electrodes. (b) Scanning electron micrography (SEM) of the cross-section of a silicon dummy wafer after step 2 in panel (a). The photoresist is colored in red, silicon dioxide in pink, and silicon in blue. (c) SEM of fabricated electrodes and LiTaO3 waveguide. The gold is colored in yellow and LiTaO3 in light blue.CC BY · PubMed Central

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  1. Wang, J., Chen, P., Dai, D. & Liu, L. Polarization coupling of X-cut thin film lithium niobate based waveguides. IEEE Photonics J.12, 2200310 (2020).

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Metadata

Authors
Wang, C., Li, Z., Riemensberger, J., Lihachev, G., Churaev, M., Kao, W., Ji, X., Zhang, J., Blesin, T., Davydova, A., Chen, Y., Huang, K., Wang, X., Ou, X., & Kippenberg, T. J.
Affiliations
  • Chinese Academy of Sciences (CN)
  • École Polytechnique Fédérale de Lausanne (CH)
Corresponding author
  • Ou, Xin
  • Kippenberg, Tobias J.
ORCID
Venue
Nature
Publisher
Springer Science and Business Media LLC
Published
2024-05-08
Volume
629
Issue
8013
Pages
784-790
ISSN
  • 0028-0836 (ISSN-L)
  • 1476-4687
DOI
10.1038/s41586-024-07369-1
PMC
PMC11111398
OpenAlex
W4396732481
Cited by
248
References
49
Citations by year
2026: 106 · 2025: 105 · 2024: 35
FWCI
39.00
Type
journal article
Language
en
Open access
Licence
Locations
  • Nature (publishedVersion, cc-by)
  • PubMed Central (publishedVersion, cc-by)
  • PubMed (publishedVersion)
  • arXiv (Cornell University) (submittedVersion, cc-by)
  • Infoscience (Ecole Polytechnique Fédérale de Lausanne) (submittedVersion, cc-by-nc-nd)
  • RePEc: Research Papers in Economics (submittedVersion)
  • Figshare (submittedVersion, public-domain)
  • arXiv (Cornell University) (cc-by)
Funders
  • École Polytechnique Fédérale de Lausanne
  • Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (201923)
  • National Natural Science Foundation of China (2019-23, 62293521)
  • China Scholarship Council
  • HORIZON EUROPE Framework Programme
  • Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
  • H2020 European Research Council (835329)
  • HORIZON EUROPE European Innovation Council (101113260)
Topics
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Photorefractive and Nonlinear Optics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
  • Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Optical and Acousto-Optic Technologies
Keywords
lithium tantalate, photonic integrated circuits, electro-optic modulator, Mach-Zehnder modulator, low-loss waveguides, high-volume manufacturing, soliton microcombs, birefringence, electro-optic bandwidth, lithium niobate comparison, telecom band

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