Perspective on the future of silicon photonics and electronics
Open accessAbstract
Silicon photonics is advancing rapidly in performance and capability with multiple fabrication facilities and foundries having advanced passive and active devices, including modulators, photodetectors, and lasers. Integration of photonics with electronics has been key to increasing the speed and aggregate bandwidth of silicon photonics based assemblies, with multiple approaches to achieving transceivers with capacities of 1.6 Tbps and higher. Progress in electronics has been rapid as well, with state-of-the-art chips including switches having many tens of billions of transistors. However, the electronic system performance is often limited by the input/output (I/O) and the power required to drive connections at a speed of tens of Gbps. Fortunately, the convergence of progress in silicon photonics and electronics means that co-packaged silicon photonics and electronics enable the continued progress of both fields and propel further innovation in both.
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Monolithic integration using hetero-epitaxial growth remains the end goal, with several recent progress and more to come.
“Monolithic integration using hetero-epitaxial growth (Fig. 3f), where the III-V substrate is not even needed, remains the end goal, with several recent progress and more to come1.”
From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [1]
The option to integrate the PIC with the EIC has been around since the first commercially successful silicon photonic product.
“The option to integrate the PIC with the EIC has been around since the first commercially successful silicon photonic product1,127,129.”
From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [1]
Cites
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Roadmapping the next generation of silicon photonics
Shekhar, S., Bogaerts, W., Chrostowski, L., Bowers, J. E., Hochberg, M., Soref, R., & Shastri, B. J. (2024) · Nature Communications · doi:10.1038/s41467-024-44750-0 · Cited by 878 · see citing works
Self-citation3D integration enables ultralow-noise isolator-free lasers in silicon photonics
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- Authors
- Margalit, N., Xiang, C., Bowers, S. M., Bjorlin, A., Blum, R., & Bowers, J. E.
- Affiliations
- Broadcom (United States) (US)
- University of California, Santa Barbara (US)
- University of Virginia (US)
- Intel (United States) (US)
- Corresponding author
- Bowers, John E.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2021-05-31
- Volume
- 118
- Issue
- 22
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W3166752161
- Cited by
- 641
- References
- 4
- Citations by year
- 2026: 84 · 2025: 151 · 2024: 169 · 2023: 128 · 2022: 92 · 2021: 17
- FWCI
- 29.85
- Type
- journal article
- Language
- en
- Open access
- hybrid
- doi.org
- Licence
- Locations
- Applied Physics Letters (publishedVersion, cc-by)
- Funders
- Defense Advanced Research Projects Agency (HR0011-19-C-0083, HR0011-20C-0142, HR0011-20C-0136)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Photonic Communication Systems
- Keywords
- silicon photonics, transceiver, optical modulators, photodetectors, silicon lasers, power consumption, high-speed interconnects
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