A memristor-based Bayesian machine
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Level shifters in the periphery circuitry can sustain high voltages and raise on-chip signals for memristor programming.
“To overcome this, we included level shifters in the periphery circuitry of the memristor arrays (Fig. 1e), which can sustain high voltages. These circuits, similar to the ones used in ref. 20, use thick-oxide transistors to raise the voltage of the on-chip signals commanding the programming of memristors.”
From Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell (2024) · cites this paper as [20]
Memristors exhibit near-immunity to read disturb effects, especially when read by precharge sense amplifiers.
“In contrast, memristors exhibit near-immunity to read disturb effects, especially when read by precharge sense amplifiers20 (we observed no read disturb in our experiments)”
From Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell (2024) · cites this paper as [20]
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Querlioz, D. (2023) · Silicon Nanoelectronics Workshop (SNW) · doi:10.23919/snw57900.2023.10183919
Self-citationNeuromorphic Computing with Resistive Memory and Bayesian Machines
Frick, N. (2023) · IntechOpen eBooks · doi:10.5772/intechopen.1003254
Stochastic computing with biased optical parametric oscillators
Roques‐Carmes, C., Salamin, Y., Choi, S., Horodynski, M., Sloan, J., Luo, D., & Marin Soljacic, A. (2025) · AI and Optical Data Sciences · doi:10.1117/12.3037014
Bayesian-Informed Hyperdimensional Learning for Intelligent and Efficient Data Processing
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Experimental Demonstration of Stochastic Bayesian Inference Using Müller C-Elements
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Deterministic 1D Domain Wall Motion with Nucleation-Free Nature in Sliding Ferroelectric Switching
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Energy-Efficient Memristor-Based Artificial Intelligence Accelerators using In/Near Memory Computing
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- Authors
- Harabi, K.-E., Hirtzlin, T., Turck, C., Vianello, E., Laurent, R., Droulez, J., Bessière, P., Portal, J.-M., Bocquet, M., & Querlioz, D.
- Affiliations
- Centre National de la Recherche Scientifique (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Corresponding author
- Querlioz, Damien
- ORCID
- Venue
- Nature Electronics
- Published
- 2022-12-19
- Volume
- 6
- Pages
- 52
- ISSN
- 2520-1131 (ISSN-L)
- OpenAlex
- W4309423061
- Cited by
- 58
- References
- 53
- Citations by year
- 2026: 6 · 2025: 21 · 2024: 13 · 2023: 15 · 2022: 3
- FWCI
- 3.56
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Licence
- Locations
- Nature Electronics (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- HAL AMU (submittedVersion)
- arXiv (Cornell University)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Computer Science › Artificial Intelligence › Neural Networks and Applications
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Keywords
- memristors, Bayesian inference, stochastic computing, distributed memory, energy-efficient computing, gesture recognition, single event upset, edge computing, explainable decision-making
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