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The DOI matches its Crossref record; 13 of the 13 references it cites were found in a registry or an index.

Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems

Open access
Li, Yi, Zhong, Yingpeng, Zhang, Jinjian, Xu, Lei, Wang, Qing, Sun, Huajun, Tong, Hao, Cheng, Xiaoming, Miao, Xiangshui·2014·Scientific Reports

Abstract

Nanoscale inorganic electronic synapses or synaptic devices, which are capable of emulating the functions of biological synapses of brain neuronal systems, are regarded as the basic building blocks for beyond-Von Neumann computing architecture, combining information storage and processing. Here, we demonstrate a Ag/AgInSbTe/Ag structure for chalcogenide memristor-based electronic synapses. The memristive characteristics with reproducible gradual resistance tuning are utilised to mimic the activity-dependent synaptic plasticity that serves as the basis of memory and learning. Bidirectional long-term Hebbian plasticity modulation is implemented by the coactivity of pre- and postsynaptic spikes, and the sign and degree are affected by assorted factors including the temporal difference, spike rate and voltage. Moreover, synaptic saturation is observed to be an adjustment of Hebbian rules to stabilise the growth of synaptic weights. Our results may contribute to the development of highly functional plastic electronic synapses and the further construction of next-generation parallel neuromorphic computing architecture.

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Crossref · 10.1038/srep04906

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Metadata

Authors
Li, Y., Zhong, Y., Zhang, J., Xu, L., Wang, Q., Sun, H., Tong, H., Cheng, X., & Miao, X.
Venue
Scientific Reports
Published
2014-05-09
Volume
4
Issue
1
Pages
4906-4906
ISSN
2045-2322 (ISSN-L)
OpenAlex
W1996388323
Cited by
344
References
13
FWCI
9.55
Type
journal article
Language
en
Open access
gold

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