Joining Chemical Pressure and Epitaxial Strain to Yield Y-Doped BiFeO3 Thin Films with High Dielectric Response
Open accessAbstract
BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε' ∼2500) and low dielectric loss (tan δ < 0.01) obtained on Bi0.95Y0.05FeO3 films epitaxially grown on SrTiO3 (001) by pulsed laser deposition. High resolution transmission electron microscopy and geometric phase analysis evidenced nanostripe domains with alternating compressive/tensile strain and slight lattice rotations. Nanoscale mixed phase/domain ensembles are commonly found in different complex materials with giant dielectric/electromechanical (ferroelectric/ relaxors) or magnetoresistance (manganites) response. Our work brings insight into the joined role of chemical pressure and epitaxial strain on the appearance of nanoscale stripe structure which creates conditions for easy reorientation and high dielectric response, and could be of more general relevance for the field of materials science where engineered materials with huge response to external stimuli are a highly priced target.
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Strain gradients can be induced into film thickness by growing compositionally graded heterostructures through dopants, where lattice parameter evolution imposes chemical pressure as a driving force for the strain gradient.
“For example, different from the conventional epitaxial misfit homogenous strain induced in ferroelectric or multiferroic thin films, strain gradients can be induced into the film thickness by growing compositionally graded heterostructures through dopants [222,223], where the evolution of the lattice parameter with composition variation will impose a 'chemical pressure' as a driving force for the”
From Metal Oxide Thin Films for Advanced Photonic Applications (2026) · cites this paper as [222]
The Results and Discussion (page not provided) report that Y doping changes the in-plane lattice parameter and that Y-doped films exhibit higher microstrain than undoped films. But the Methods describe films grown from a single Bi0.95Y0.05FeO3 target; the paper does not report a compositionally graded heterostructure or show a composition-driven strain gradient through the film thickness. (LLM, conf=0.86)
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“…multiferroic thin films, strain gradients can be induced into the film thickness by growing compositionally graded heterostructures through dopants [222,223], where the evolution of the lattice parameter with composition variation will impose a “chemical pressure” as a driving force for the strain…”
Self-citation
- Authors
- Scarisoreanu, N. D., Craciun, F., Birjega, R., Ion, V., Teodorescu, V. S., Ghica, C., Negrea, R., & Dinescu, M.
- Affiliations
- National Institute for Laser Plasma and Radiation Physics (RO)
- Institute for Complex Systems (IT)
- University of Bucharest (RO)
- National Institute of Materials Physics (RO)
- Corresponding author
- Scarisoreanu, N. D.
- ORCID
- Venue
- Scientific Reports
- Published
- 2016-05-09
- Volume
- 6
- Issue
- 1
- Pages
- 25535-25535
- ISSN
- 2045-2322 (ISSN-L)
- PMC
- PMC4860595
- OpenAlex
- W2346026941
- Cited by
- 23
- References
- 46
- Citations by year
- 2026: 2 · 2025: 4 · 2024: 2 · 2023: 3 · 2021: 2 · 2020: 3 · 2019: 3 · 2018: 4
- FWCI
- 0.73
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Locations
- Scientific Reports (publishedVersion, cc-by)
- PubMed Central (publishedVersion, cc-by)
- PubMed (publishedVersion)
- Funders
- Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii
- Topics
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
- Keywords
- BiFeO3, multiferroics, dielectric constant, dielectric loss, chemical pressure, epitaxial strain, lattice rotation, SrTiO3 substrate, thin films, relaxor ferroelectrics
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