The DOI matches its Crossref record; 77 of the 77 references it cites were found in a registry or an index.
Nanoscale resistive switching devices: mechanisms and modeling
Abstract
Resistive switching devices (also termed memristive devices or memristors) are two-terminal nonlinear dynamic electronic devices that can have broad applications in the fields of nonvolatile memory, reconfigurable logic, analog circuits, and neuromorphic computing. Current rapid advances in memristive devices in turn demand better understanding of the switching mechanism and the development of physics-based as well as simplified device models to guide future device designs and circuit-level applications. In this article, we review the physical processes behind resistive switching (memristive) phenomena and discuss the experimental and modeling efforts to explain these effects. In this article three categories of devices, in which the resistive switching effects are driven by cation migration, anion migration, and electronic effects, will be discussed. The fundamental driving forces and the stochastic nature of resistive switching will also be discussed.
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Cites
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Memristor—The Missing Circuit Element
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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
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Nanoionics-based resistive switching memories
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Nanoscale Memristor Device as Synapse in Neuromorphic Systems
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Self-citationMemristive switching mechanism for metal/oxide/metal nanodevices
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Resistive switching in transition metal oxides
Sawa, A. (2008) · Materials Today · doi:10.1016/s1369-7021(08)70119-6 · Cited by 2,948
Memristive devices and systems
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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
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Cited by
Sim, K., Rao, Z., Zou, Z., Ershad, F., Lei, J., Thukral, A., Chen, J., Huang, Q.-A., Xiao, J., & Yu, C. (2019) · Science Advances · doi:10.1126/sciadv.aav9653 · Cited by 305
Status and prospects of ZnO-based resistive switching memory devices
Simanjuntak, F. M., Panda, D., Wei, K.-H., & Tseng, T.-Y. (2016) · Nanoscale Research Letters · doi:10.1186/s11671-016-1570-y · Cited by 244
Gao, S., Zeng, F., Li, F., Wang, M., Mao, H., Wang, G., Song, C., & Pan, F. (2015) · Nanoscale · doi:10.1039/c4nr06406b · Cited by 113
Yuan, F., Zhang, Z., Liu, C., Zhou, F., Yau, H. M., Lu, W., Qiu, X., Wong, H.-S. P., Dai, J., & Chai, Y. (2017) · ACS Nano · doi:10.1021/acsnano.7b00783 · Cited by 99
Self-citationMechanically Durable Memristor Arrays Based on a Discrete Structure Design
Wang, T., Cui, Z., Liu, Y., Lu, D., Wang, M., Wan, C., Leow, W. R., Wang, C., Pan, L., Cao, X., et al. (2022) · Advanced Materials · doi:10.1002/adma.202106212 · Cited by 42
Metadata
- Authors
- Yang, Y., & Lu, W.
- Venue
- Nanoscale
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2013
- Volume
- 5
- Issue
- 21
- Pages
- 10076
- ISSN
- 2040-3364 (ISSN-L)
- 2040-3372
- OpenAlex
- W1984423327
- Cited by
- 270
- References
- 77
- FWCI
- 14.18
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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