Cited by 78Advancements in Photolithography TechniquesNanofabrication and Lithography TechniquesBlock Copolymer Self-Assembly

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Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists

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Abstract

Novel positive-tone hybrid resists developed by vapor-phase inorganic infiltration feature fully tunable resist performance parameters and high-aspect-ratio pattern transfer capability.

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Crossref · 10.1039/c9tc02974e

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  • PMMA infiltrated with AlOx as a positive-tone hybrid EUV resist system demonstrated increased etch resistance and process stability through a higher level of cross-linking.

    “It also includes innovative applications such as poly methyl methacrylate (PMMA) infiltrated with AlOx as a positive-tone hybrid EUV resist system, which demonstrated increased etch resistance and process stability through a higher level of cross-linking, crucial for advanced patterning techniques [38].”
  • VPI applied ex situ to pre-lithography coatings generates hybrid inorganic-organic resist materials, significantly increasing EUV sensitivity and mechanical strength.

    “Moreover, VPI has been applied ex situ to pre-lithography coatings (Figure 6b) to generate hybrid inorganic–organic resist materials, significantly increasing EUV sensitivity and mechanical strength of the resists.”

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Research works printed but not linked: 93

  1. Wang, 2017, Chem. Soc. Rev., 46, 4855, 10.1039/C7CS00080D · DOI
  2. Giannelis, 2009, Adv. Resist Mater. Process. Technol. XXVI, 7273, 727326, 10.1117/12.814154 · DOI
  3. Morris, 2015, Microelectron. Eng., 132, 207, 10.1016/j.mee.2014.08.009 · DOI
  4. Roberts, 2013, J. Phys. D: Appl. Phys., 46, 503001, 10.1088/0022-3727/46/50/503001 · DOI
  5. Pease, 2008, Proc. IEEE, 96, 248, 10.1109/JPROC.2007.911853 · DOI
  6. Li, 2015, Chem. Mater., 27, 5027, 10.1021/acs.chemmater.5b01506 · DOI · Paper page
  7. Tavakkoli, K. G., 2011, J. Vac. Sci. Technol., B: Nanotechnol. Microelectron.: Mater., Process., Meas., Phenom., 29, 011035
  8. M. A. Hartney , R. R.Kunz , D. J.Ehrlich and D. C.Shaver , in Advances in Resist Technology and Processing VII , ed. M. P. C. Watts , 1990 , vol. 1262, p. 119 · DOI
  9. Thackeray, 1989, J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.–Process., Meas., Phenom., 7, 1620, 10.1116/1.584502 · DOI
  10. Endo, 2000, Microelectron. Eng., 53, 485, 10.1016/S0167-9317(00)00361-0 · DOI
  11. Pavelchek, 1990, J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.–Process., Meas., Phenom., 8, 1497, 10.1116/1.585104 · DOI
  12. Hutton, 1990, J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.–Process., Meas., Phenom., 8, 1502, 10.1116/1.585105 · DOI
  13. Roland, 1991, Microelectron. Eng., 13, 11, 10.1016/0167-9317(91)90038-F · DOI
  14. Pierrat, 1990, Microelectron. Eng., 11, 507, 10.1016/0167-9317(90)90160-U · DOI
  15. Kontziampasis, 2010, J. Appl. Polym. Sci., 117, 2189, 10.1002/app.31644 · DOI
  16. Arshak, 2002, Microelectron. Eng., 61–62, 783, 10.1016/S0167-9317(02)00446-X · DOI
  17. Ryoo, 2002, Microelectron. Eng., 61–62, 723, 10.1016/S0167-9317(02)00504-X · DOI
  18. Sinha, 2006, Electrochem. Solid-State Lett., 9, G330, 10.1149/1.2335939 · DOI
  19. Herbert, 1994, Engineering, 23, 263
  20. Prins, 1998, Microelectron. Eng., 42, 359, 10.1016/S0167-9317(98)00083-5 · DOI
  21. Arshak, 2003, Microelectron. Eng., 67–68, 130, 10.1016/S0167-9317(03)00169-2 · DOI
  22. Kasahara, 2017, J. Micro/Nanolithogr., MEMS, MOEMS, 16, 1
  23. C. Y. Ouyang , Y. S.Chung , L.Li , M.Neisser , K.Cho , E. P.Giannelis and C. K.Ober , in Advances in Resist Materials and Processing Technology XXX , ed. M. H. Somervell , 2013 , vol. 8682, p. 86820R
  24. Ober, 2013, J. Photopolym. Sci. Technol., 26, 659, 10.2494/photopolymer.26.659 · DOI
  25. Reddy, 2016, RSC Adv., 6, 67143, 10.1039/C6RA10575K · DOI
  26. Sortland, 2015, J. Micro/Nanolithogr., MEMS, MOEMS, 14, 043511, 10.1117/1.JMM.14.4.043511 · DOI
  27. Murphy, 2018, Proc. SPIE, 10586, 1058608
  28. Murphy, 2017, Extrem. Ultrav. Lithogr. VIII, 10143, 1014307, 10.1117/12.2258119 · DOI
  29. Grzeskowiak, 2017, Adv. Patterning Mater. Process. XXXIV, 10146, 1014605, 10.1117/12.2258151 · DOI
  30. J. Haitjema , Y.Zhang , M.Vockenhuber , D.Kazazis , Y.Ekinci and A. M.Brouwer , in Extreme Ultraviolet (EUV) Lithography VIII , ed. E. M. Panning and K. A. Goldberg , 2017 , vol. 10143, p. 1014325
  31. Haitjema, 2018, J. Photopolym. Sci. Technol., 31, 249, 10.2494/photopolymer.31.243 · DOI
  32. Webb, 1979, J. Vac. Sci. Technol., 16, 2008, 10.1116/1.570331 · DOI
  33. Yamaguchi, 1992, J. Electrochem. Soc., 139, L33, 10.1149/1.2069330 · DOI
  34. Nedelcu, 2010, Adv. Funct. Mater., 20, 2317, 10.1002/adfm.201000219 · DOI
  35. Subramanian, 2004, Nanotechnology, 15, 158, 10.1088/0957-4484/15/1/031 · DOI
  36. Saifullah, 2003, Nano Lett., 3, 1587, 10.1021/nl034584p · DOI
  37. Saifullah, 2010, J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.--Process., Meas., Phenom., 28, 90, 10.1116/1.3273536 · DOI
  38. Subramanian, 2004, Nanotechnology, 15, 158, 10.1088/0957-4484/15/1/031 · DOI
  39. Saifullah, 1999, 1999 Int. Microprocess. Nanotechnol. Conf., 38, 160, 10.1109/IMNC.1999.797526 · DOI
  40. Saifullah, 2004, J. Sol–Gel Sci. Technol., 29, 5, 10.1023/B:JSST.0000016131.35342.2f · DOI
  41. Saifullah, 2006, J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.--Process., Meas., Phenom., 24, 1215, 10.1116/1.2192545 · DOI
  42. M. S. M. saifullah , Cosmos , 2009 , 05 , 1–21
  43. Saifullah, 2005, Adv. Mater., 17, 1757, 10.1002/adma.200500484 · DOI
  44. Zanchetta, 2013, Adv. Mater., 25, 6261, 10.1002/adma.201301555 · DOI
  45. Brigo, 2010, Microelectron. Eng., 87, 947, 10.1016/j.mee.2009.11.151 · DOI
  46. Grenci, 2012, Microelectron. Eng., 98, 134, 10.1016/j.mee.2012.07.070 · DOI
  47. Grenci, 2011, Microelectron. Eng., 88, 1964, 10.1016/j.mee.2011.01.012 · DOI
  48. Cattoni, 2018, Microelectron. Eng., 193, 18, 10.1016/j.mee.2018.02.015 · DOI
  49. Oleksak, 2014, ACS Appl. Mater. Interfaces, 6, 2917, 10.1021/am405463u · DOI
  50. R. P. Oleksak and G. S.Herman , in Proc. of SPIE , ed. O. R. Wood and E. M. Panning , 2014 , vol. 9048, p. 90483H
  51. Cui, 2014, Mater. Res. Express, 1, 045102, 10.1088/2053-1591/1/4/045102 · DOI
  52. Zhang, 2015, Chem. Commun., 51, 17592, 10.1039/C5CC07117H · DOI
  53. Il Lee, 2013, Appl. Organomet. Chem., 27, 644, 10.1002/aoc.2985 · DOI
  54. Grenci, 2015, Appl. Mater. Today, 1, 13, 10.1016/j.apmt.2015.06.003 · DOI
  55. M. Zhao , B.Chen , C.Xie , M.Liu and J.Nie , 2010 IEEE 5th Int. Conf. Nano/Micro Eng. Mol. Syst. NEMS 2010 , 2010 , pp. 1021–1024
  56. Singh, 2011, Adv. Fabr. Technol. Micro/Nano Opt. Photonics IV, 7927, 792715, 10.1117/12.874851 · DOI
  57. Grigorescu, 2009, Nanotechnology, 20, 292001, 10.1088/0957-4484/20/29/292001 · DOI
  58. Grigorescu, 2007, Microelectron. Eng., 84, 822, 10.1016/j.mee.2007.01.022 · DOI
  59. Czaplewski, 2011, J. Vac. Sci. Technol., B: Nanotechnol. Microelectron.: Mater., Process., Meas., Phenom., 29, 021601
  60. Czaplewski, 2009, J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.--Process., Meas., Phenom., 27, 581, 10.1116/1.3086721 · DOI
  61. Thoms, 2014, J. Vac. Sci. Technol., B: Nanotechnol. Microelectron.: Mater., Process., Meas., Phenom., 32, 06FJ01
  62. Schirmer, 2013, 29th Eur. Mask Lithogr. Conf., 8886, 88860D, 10.1117/12.2030576 · DOI
  63. Gerardino, 1999, Microelectron. Eng., 46, 201, 10.1016/S0167-9317(99)00062-3 · DOI
  64. Kaya, 2017, Nanotechnology, 28, 455301, 10.1088/1361-6528/aa8bd5 · DOI
  65. Yasin, 2002, Microelectron. Eng., 61–62, 745, 10.1016/S0167-9317(02)00468-9 · DOI
  66. Gorelick, 2010, Nanotechnology, 21, 295303, 10.1088/0957-4484/21/29/295303 · DOI
  67. Chen, 2002, J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct.--Process., Meas., Phenom., 17, 2507, 10.1116/1.591119 · DOI
  68. Hu, 2003, Proc. IEEE Conf. Nanotechnol., 2, 602, 10.1109/NANO.2003.1230983 · DOI
  69. Koshelev, 2011, J. Vac. Sci. Technol., B: Nanotechnol. Microelectron.: Mater., Process., Meas., Phenom., 29, 06F306
  70. Manfrinato, 2017, Nano Lett., 17, 4562, 10.1021/acs.nanolett.7b00514 · DOI
  71. Zhang, 2004, J. Micromech. Microeng., 14, 663, 10.1088/0960-1317/14/5/001 · DOI
  72. Smith, 2010, Adv. Resist Mater. Process. Technol. XXVII, 7639, 763915, 10.1117/12.846924 · DOI
  73. Wang, 2006, J. Mater. Chem., 16, 3701, 10.1039/b607918k · DOI
  74. Peters, 2003, Adv. Resist Technol. Process. XX, 5039, 393, 10.1117/12.485132 · DOI
  75. Subramanian, 2019, JOM, 71, 185, 10.1007/s11837-018-3141-4 · DOI
  76. Tseng, 2011, J. Mater. Chem., 21, 11722, 10.1039/c1jm12461g · DOI
  77. Tseng, 2012, Adv. Mater., 24, 2608, 10.1002/adma.201104871 · DOI
  78. Subramanian, 2019, Nanoscale, 11, 9533, 10.1039/C9NR00206E · DOI
  79. Biswas, 2014, Chem. Mater., 26, 6135, 10.1021/cm502427q · DOI
  80. Tobing, 2013, Nanotechnology, 24, 075303, 10.1088/0957-4484/24/7/075303 · DOI
  81. Ozaki, 2018, Jpn. J. Appl. Phys., 57, 06HG01, 10.7567/JJAP.57.06HG01 · DOI
  82. Kulsreshath, 2018, Micro Nano Eng., 1, 42, 10.1016/j.mne.2018.10.007 · DOI
  83. Wu, 2010, J. Appl. Phys., 108, 051101, 10.1063/1.3474652 · DOI
  84. Dusoe, 2017, Nano Lett., 17, 7416, 10.1021/acs.nanolett.7b03238 · DOI
  85. R. L. Brainard , M.Neisser , G. M.Gallatin and A. K.Narasimhan , EUV Lithography, Second Edition , SPIE , 2018 , pp. 493–591
  86. R. Fallica , J.Haitjema , L.Wu , S.Castellanos , A. M.Brouwer and Y.Ekinci , J. Micro/Nanolithography, MEMS, MOEMS , 2018 , 17 , 1
  87. R. Fallica , J.Haitjema , L.Wu , S.Castellanos , F.Brouwer and Y.Ekinci , in Extreme Ultraviolet (EUV) Lithography VIII , ed. E. M. Panning and K. A. Goldberg , 2017 , vol. 10143, p. 101430A
  88. Kamcev, 2013, ACS Nano, 7, 339, 10.1021/nn304122b · DOI
  89. Peng, 2017, Langmuir, 33, 13214, 10.1021/acs.langmuir.7b02922 · DOI
  90. Ye, 2017, Chem. Mater., 29, 4535, 10.1021/acs.chemmater.7b01222 · DOI
  91. Ocola, 2017, J. Phys. Chem. C, 121, 1893, 10.1021/acs.jpcc.6b08007 · DOI
  92. Nam, 2017, Adv. Opt. Mater., 5, 1700807, 10.1002/adom.201700807 · DOI
  93. Kim, 2018, Nanoscale, 10, 3469, 10.1039/C7NR07642H · DOI

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Metadata

Authors
Tiwale, N., Subramanian, A., Kisslinger, K., Lu, M., Kim, J., Stein, A., & Nam, C.-Y.
Affiliations
  • Brookhaven National Laboratory (US)
  • Stony Brook University (US)
  • The University of Texas at Dallas (US)
Corresponding author
Nam, Chang-Yong
Venue
Journal of Materials Chemistry C
Published
2019
Volume
7
Issue
29
Pages
8803-8812
ISSN
  • 2050-7526 (ISSN-L)
  • 2050-7534
OpenAlex
W2960993351
Cited by
78
References
0
Citations by year
2026: 19 · 2025: 16 · 2024: 14 · 2023: 6 · 2022: 10 · 2021: 6 · 2020: 5 · 2019: 2
FWCI
2.07
Type
journal article
Language
en
Open access
Locations
  • Journal of Materials Chemistry C (publishedVersion)
  • OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
Funders
Office of Science (DE-SC0012704)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
  • Physical Sciences › Materials Science › Surfaces, Coatings and Films › Nanofabrication and Lithography Techniques
  • Physical Sciences › Materials Science › Materials Chemistry › Block Copolymer Self-Assembly
Keywords
nanolithography, positive resist, vapor phase infiltration, high aspect ratio patterning

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