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Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists
Open accessAbstract
Novel positive-tone hybrid resists developed by vapor-phase inorganic infiltration feature fully tunable resist performance parameters and high-aspect-ratio pattern transfer capability.
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PMMA infiltrated with AlOx as a positive-tone hybrid EUV resist system demonstrated increased etch resistance and process stability through a higher level of cross-linking.
“It also includes innovative applications such as poly methyl methacrylate (PMMA) infiltrated with AlOx as a positive-tone hybrid EUV resist system, which demonstrated increased etch resistance and process stability through a higher level of cross-linking, crucial for advanced patterning techniques [38].”
From Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography (2024) · cites this paper as [38]
VPI applied ex situ to pre-lithography coatings generates hybrid inorganic-organic resist materials, significantly increasing EUV sensitivity and mechanical strength.
“Moreover, VPI has been applied ex situ to pre-lithography coatings (Figure 6b) to generate hybrid inorganic–organic resist materials, significantly increasing EUV sensitivity and mechanical strength of the resists.”
From Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography (2024) · cites this paper as [38]
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Metadata
- Authors
- Tiwale, N., Subramanian, A., Kisslinger, K., Lu, M., Kim, J., Stein, A., & Nam, C.-Y.
- Affiliations
- Brookhaven National Laboratory (US)
- Stony Brook University (US)
- The University of Texas at Dallas (US)
- Corresponding author
- Nam, Chang-Yong
- ORCID
- Venue
- Journal of Materials Chemistry C
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2019
- Volume
- 7
- Issue
- 29
- Pages
- 8803-8812
- ISSN
- 2050-7526 (ISSN-L)
- 2050-7534
- OpenAlex
- W2960993351
- Cited by
- 78
- References
- 0
- Citations by year
- 2026: 19 · 2025: 16 · 2024: 14 · 2023: 6 · 2022: 10 · 2021: 6 · 2020: 5 · 2019: 2
- FWCI
- 2.07
- Type
- journal article
- Language
- en
- Open access
- green
- www.osti.gov
- Locations
- Journal of Materials Chemistry C (publishedVersion)
- OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
- Funders
- Office of Science (DE-SC0012704)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Materials Science › Surfaces, Coatings and Films › Nanofabrication and Lithography Techniques
- Physical Sciences › Materials Science › Materials Chemistry › Block Copolymer Self-Assembly
- Keywords
- nanolithography, positive resist, vapor phase infiltration, high aspect ratio patterning
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
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