Cited by 7Semiconductor materials and devicesThin-Film Transistor TechnologiesElectronic and Structural Properties of Oxides

High-performance oxide thin-film diode and its conduction mechanism based on ALD-assisted interface engineering

Yeom, Hye-In, Kim, Jingyu, Jeon, Guk-Jin, Park, Jeongwoo, Han, Dong Uk, Kim, Joohyeong, Kim, Kyung Min, Shong, Bonggeun +1 more·2023·Journal of Materials Chemistry C

Abstract

With in-depth analysis and the exact conduction mechanism, the oxide thin-film diodes were developed by ALD-assisted interface engineering.

Integrity signals

Registry

Crossref · 10.1039/d2tc03751c

Cites

41 of 41 references verified0 citation errors · 0 not checkable

Statistics

Recomputing p-values needs the paper’s full text.

Claims the paper makes

We couldn’t retrieve this paper’s full text, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

Cites

Flagged first, then by citations

Cited by

Sorted by citations

Authors
Yeom, H.-I., Kim, J., Jeon, G.-J., Park, J., Han, D. U., Kim, J., Kim, K. M., Shong, B., & Park, S.-H. K.
Affiliations
  • Korea Advanced Institute of Science and Technology (KR)
  • Hongik University (KR)
Corresponding author
Park, Sang-Hee Ko
Venue
Journal of Materials Chemistry C
Published
2023
Volume
11
Issue
4
Pages
1336-1345
ISSN
  • 2050-7526 (ISSN-L)
  • 2050-7534
OpenAlex
W4313592562
Cited by
7
References
41
Citations by year
2026: 1 · 2025: 2 · 2024: 3 · 2023: 1
FWCI
0.41
Type
journal article
Language
en
Open access
closed
Locations
Journal of Materials Chemistry C (publishedVersion)
Funders
  • Ministry of SMEs and Startups (S3207541)
  • Ministry of Trade, Industry and Energy (20006400)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Thin-Film Transistor Technologies
  • Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
Keywords
atomic layer deposition, interface engineering, conduction mechanism

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review