High-performance oxide thin-film diode and its conduction mechanism based on ALD-assisted interface engineering
Abstract
With in-depth analysis and the exact conduction mechanism, the oxide thin-film diodes were developed by ALD-assisted interface engineering.
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Replacing the oxidant for the Al2O3 tunneling layer from H2O to O3 reduced H-passivated traps and improved programming speed.
“we replaced the oxidant for the Al2O3 tunneling layer from H2O to O3 to reduce the H-passivated traps30–33, thereby improving the programming speed”
From Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis (2025) · cites this paper as [33]
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- Authors
- Yeom, H.-I., Kim, J., Jeon, G.-J., Park, J., Han, D. U., Kim, J., Kim, K. M., Shong, B., & Park, S.-H. K.
- Affiliations
- Korea Advanced Institute of Science and Technology (KR)
- Hongik University (KR)
- Corresponding author
- Park, Sang-Hee Ko
- ORCID
- Venue
- Journal of Materials Chemistry C
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2023
- Volume
- 11
- Issue
- 4
- Pages
- 1336-1345
- ISSN
- 2050-7526 (ISSN-L)
- 2050-7534
- OpenAlex
- W4313592562
- Cited by
- 7
- References
- 41
- Citations by year
- 2026: 1 · 2025: 2 · 2024: 3 · 2023: 1
- FWCI
- 0.41
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Materials Chemistry C (publishedVersion)
- Funders
- Ministry of SMEs and Startups (S3207541)
- Ministry of Trade, Industry and Energy (20006400)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Thin-Film Transistor Technologies
- Physical Sciences › Materials Science › Materials Chemistry › Electronic and Structural Properties of Oxides
- Keywords
- atomic layer deposition, interface engineering, conduction mechanism
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