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Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al x Ga1−x N heterojunctions
Abstract
We have confirmed the presence of a two-dimensional electron gas (2DEG) in a wide band-gap GaN-AlxGa1−xN heterojunction by observing steplike features in the quantum Hall effect. The 2DEG mobility for a GaN-Al0.13Ga0.87N heterojunction was measured to be 834 cm2/V s at room temperature. It monotonically increased and saturated at a value of 2626 cm2/V s at 77 K. The 2DEG mobility remained nearly constant for temperatures ranging from 77 to 4.2 K. Using Shubnikov–de Haas (SdH) measurements the two-dimensional carrier concentration was estimated to be 1×1011 cm−2. The peak mobility for the 2DEG was found to decrease with the heterojunction aluminum compositions in excess of 13%.
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Khan, M. A., Van Hove, J. M., Kuznia, J. N., & Olson, D. T. (1991) · Applied Physics Letters · doi:10.1063/1.104886 · Cited by 182
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Metadata
- Authors
- Khan, M. A., Kuznia, J. N., Van Hove, J. M., Pan, N., & Carter, J.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1992-06-15
- Volume
- 60
- Issue
- 24
- Pages
- 3027-3029
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2043463741
- Cited by
- 248
- References
- 1
- FWCI
- 3.94
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al x Ga1−x N heterojunctions. https://app.cochat.ai/papers/10.1063/1.106798
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- Khan, M. A., Kuznia, J. N., Van Hove, J. M., Pan, N., & Carter, J. (1992). Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al x Ga1−x N heterojunctions. Applied Physics Letters. https://doi.org/10.1063/1.106798
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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