The DOI matches its Crossref record; 48 of the 48 references it cites were found in a registry or an index.
Emerging gallium nitride based devices
Abstract
Wide bandgap GaN has long been sought for its applications to blue and UV emitters and high temperature/high power electronic devices. Recent introduction of commercial blue and blue-green LED's have led to a plethora of activity in all three continents into the heterostructures based on GaN and its alloys with AlN and InN. In this review, the status and future prospects of emerging wide bandgap gallium nitride semiconductor devices are discussed. Recent successes in p-doping of GaN and its alloys with InN and AlN, and in n-doping with much reduced background concentrations have paved the way for the design, fabrication, and characterization of devices such as MESFET's, MISFET's, HBT's, LED's, and optically pumped lasers. We discuss the electrical properties of these devices and their drawbacks followed by future prospects. After a short elucidation of materials characteristics of the nitrides, we explore their electrical transport properties in detail. Recent progress in processing such as formation of low-resistance ohmic contacts and etching is also presented. The promising features of quarternaries and double heterostructures in relation to possible current injection lasers, LED's, and photodetectors are also elaborated on.>
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Cites
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Cited by
Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction
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High-power wind energy conversion systems: State-of-the-art and emerging technologies
Yaramasu, V., Wu, B., Sen, P. C., Kouro, S., & Narimani, M. (2015) · Proceedings of the IEEE · doi:10.1109/jproc.2014.2378692 · Cited by 991
Gallium Nitride Nanowire Nanodevices
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Wide Band Gap Chalcogenide Semiconductors
Woods-Robinson, R., Han, Y., Zhang, H., Ablekim, T., Khan, I., Persson, K. A., & Zakutayev, A. (2020) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00600 · Cited by 513
Thermal Conductivity and Large Isotope Effect in GaN from First Principles
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Metadata
- Authors
- Mohammad, S. N., Salvador, A. A., & Morkoc, H.
- Venue
- Proceedings of the IEEE
- Published
- 1995
- Volume
- 83
- Issue
- 10
- Pages
- 1306-1355
- ISSN
- 0018-9219 (ISSN-L)
- OpenAlex
- W2141493987
- Cited by
- 614
- References
- 48
- FWCI
- 31.75
- Type
- journal article
- Language
- en
- Open access
- closed
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