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p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
Abstract
Temperature dependences of the hole concentration and Hall mobility in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy were measured by the van der Pauw method over a wide temperature range from 100 to 500 K. Assuming that the effective mass of holes in Al0.08Ga0.92N is equal to that of GaN, the activation energy of the Mg shallow acceptor in Al0.08Ga0.92N is estimated to be about 35 meV deeper than that in GaN.
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Citations
Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Emerging gallium nitride based devices
Mohammad, S. N., Salvador, A. A., & Morkoc, H. (1995) · Proceedings of the IEEE · doi:10.1109/5.469300 · Cited by 614
Progress and prospects of group-III nitride semiconductors
Mohammad, S. N., & Morkoç, H. (1996) · Progress in Quantum Electronics · doi:10.1016/s0079-6727(96)00002-x · Cited by 502
Growth of Group III Nitrides. A Review of Precursors and Techniques
Neumayer, D. A., & Ekerdt, J. G. (1996) · Chemistry of Materials · doi:10.1021/cm950108r · Cited by 313
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Stampfl, C., & Van de Walle, C. G. (2002) · Physical Review B · doi:10.1103/physrevb.65.155212 · Cited by 276
Metadata
- Authors
- Tanaka, T., Watanabe, A., Amano, H., Kobayashi, Y., Akasaki, I., Yamazaki, S., & Koike, M.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1994-08-01
- Volume
- 65
- Issue
- 5
- Pages
- 593-594
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2045714396
- Cited by
- 258
- References
- 0
- FWCI
- 5.28
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy. https://app.cochat.ai/papers/10.1063/1.112309
- The paper
- Tanaka, T., Watanabe, A., Amano, H., Kobayashi, Y., Akasaki, I., Yamazaki, S., & Koike, M. (1994). p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy. Applied Physics Letters. https://doi.org/10.1063/1.112309
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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