The DOI matches its Crossref record; 9 of the 9 references it cites were found in a registry or an index.
Phonon-boundary scattering in thin silicon layers
Abstract
Temperature fields in microdevices made from silicon-on-insulator (SOI) wafers are strongly influenced by the lateral thermal conductivity of the silicon overlayer, which is diminished by phonon scattering on the layer boundaries. This study measures the thermal conductivity of single-crystal silicon layers in SOI substrates at temperatures between 20 and 320 K using Joule heating and electrical-resistance thermometry in microfabricated structures. Data for layers of thickness between 0.4 and 1.6 μm demonstrate the large reduction resulting from phonon-boundary scattering, particularly at low temperatures, and are consistent with predictions based on the phonon Boltzmann transport equation.
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“The thermal conductivity of thin single-crystal silicon layers has been reported for a range of thicknesses from 20 nm [8] to 3 l m [7,11,12].”
From Mean Free Path Effects on the Experimentally Measured Thermal Conductivity of Single-Crystal Silicon Microbridges (2013) · cites this paper as [11]
Citations
Cites
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Analysis of Lattice Thermal Conductivity
Holland, M. G. (1963) · Physical Review · doi:10.1103/physrev.132.2461 · Cited by 1,165
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Maszara, W. (1991) · Journal of The Electrochemical Society · doi:10.1149/1.2085575 · Cited by 170
Chui, B. W., Stowe, T. D., Kenny, T. W., Mamin, H. J., Terris, B. D., & Rugar, D. (1996) · Applied Physics Letters · doi:10.1063/1.117669 · Cited by 117
Annealing-temperature dependence of the thermal conductivity of LPCVD silicon-dioxide layers
Goodson, K. E., Flik, M. I., Su, L. T., & Antoniadis, D. A. (1993) · IEEE Electron Device Letters · doi:10.1109/55.244740 · Cited by 94
Self-citationDetermination of the thermal conductivity of CMOS IC polysilicon
Paul, O., Korvink, J. G., & Baltes, H. (1994) · Sensors and Actuators A Physical · doi:10.1016/0924-4247(94)80106-1 · Cited by 53
Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI
Leung, Y.-K., Kuehne, S. C., Huang, V. S. K., Nguyen, C. T., Paul, A. K., Plummer, J. D., & Wong, S. S. (1997) · IEEE Electron Device Letters · doi:10.1109/55.553061 · Cited by 26
Self-citationJu, Y. S., & Goodson, K. E. (1997) · Japanese Journal of Applied Physics · doi:10.1143/jjap.36.l798 · Cited by 6
Self-citation
Research works printed but not linked: 2
- 1993, Semicond. Int., 16, 48
- 1994, Sens. Actuators A, A41, 161
Cited by
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Enhanced thermoelectric performance of rough silicon nanowires
Hochbaum, A. I., Chen, R., Delgado, R. D., Liang, W., Garnett, E. C., Najarian, M., Majumdar, A., & Yang, P. (2008) · Nature · doi:10.1038/nature06381 · Cited by 4,109
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Hochbaum, A. I., & Yang, P. (2009) · Chemical Reviews · doi:10.1021/cr900075v · Cited by 1,412
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Wu, S., Yan, T., Kuai, Z., & Pan, W. (2020) · Energy Storage Materials · doi:10.1016/j.ensm.2019.10.010 · Cited by 962
Phonon-engineered extreme thermal conductivity materials
Qian, X., Zhou, J., & Chen, G. (2021) · Nature Materials · doi:10.1038/s41563-021-00918-3 · Cited by 872
Phonon scattering in silicon films with thickness of order 100 nm
Ju, Y. S., & Goodson, K. E. (1999) · Applied Physics Letters · doi:10.1063/1.123994 · Cited by 653
Self-citation
Metadata
- Authors
- Asheghi, M., Leung, Y. K., Wong, S. S., & Goodson, K. E.
- Affiliations
- Stanford University (US)
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1997-09-29
- Volume
- 71
- Issue
- 13
- Pages
- 1798-1800
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2086218869
- Cited by
- 337
- References
- 9
- Citations by year
- 2026: 5 · 2025: 11 · 2024: 8 · 2023: 9 · 2022: 7 · 2021: 9 · 2020: 13 · 2019: 15 · 2018: 15 · 2017: 25 · 2016: 28 · 2015: 35 · 2014: 20 · 2013: 16 · 2012: 16
- FWCI
- 1.31
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Applied Physics Letters (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Keywords
- phonon boundary scattering, thermal conductivity, silicon-on-insulator, silicon thin films, Joule heating, phonon Boltzmann transport equation, low-temperature thermal transport, microfabricated structures
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