Cited by 337Thermal properties of materialsAdvancements in Semiconductor Devices and Circuit DesignPhotonic and Optical Devices

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Phonon-boundary scattering in thin silicon layers

Asheghi, M., Leung, Y. K., Wong, S. S., Goodson, K. E.·1997·Applied Physics Letters

DOI 10.1063/1.119402

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Abstract

Temperature fields in microdevices made from silicon-on-insulator (SOI) wafers are strongly influenced by the lateral thermal conductivity of the silicon overlayer, which is diminished by phonon scattering on the layer boundaries. This study measures the thermal conductivity of single-crystal silicon layers in SOI substrates at temperatures between 20 and 320 K using Joule heating and electrical-resistance thermometry in microfabricated structures. Data for layers of thickness between 0.4 and 1.6 μm demonstrate the large reduction resulting from phonon-boundary scattering, particularly at low temperatures, and are consistent with predictions based on the phonon Boltzmann transport equation.

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Authors: Asheghi, M., Leung, Y. K., Wong, S. S., & Goodson, K. E.
Affiliations: Stanford University (US)
ORCID: Asheghi, M.
Wong, S. S.
Goodson, K. E.
Venue: Applied Physics Letters
Publisher: AIP Publishing
Published: 1997-09-29
Volume: 71
Issue: 13
Pages: 1798-1800
ISSN: 0003-6951 (ISSN-L)
1077-3118
DOI: 10.1063/1.119402
OpenAlex: W2086218869
Cited by: 337
References: 9
Citations by year: 2026: 5 · 2025: 11 · 2024: 8 · 2023: 9 · 2022: 7 · 2021: 9 · 2020: 13 · 2019: 15 · 2018: 15 · 2017: 25 · 2016: 28 · 2015: 35 · 2014: 20 · 2013: 16 · 2012: 16
FWCI: 1.31
Type: journal article
Language: en
Open access: closed
Locations: Applied Physics Letters (publishedVersion)
Topics: Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
Keywords: phonon boundary scattering, thermal conductivity, silicon-on-insulator, silicon thin films, Joule heating, phonon Boltzmann transport equation, low-temperature thermal transport, microfabricated structures

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Phonon-boundary scattering in thin silicon layers

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