The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC
Abstract
The electron mobility and free electron density have been measured in 4H– and 6H–SiC metal-oxide-semiconductor inversion layers using the Hall effect. The 4H–SiC inversion layers are found to have very poor conductance which is caused by severe trapping of electrons at the Si/SiO2 interface. The trapping causes reduced conductance through a reduction in the number of free electrons in the inversion layer, and also because of a drop in the mobility due to increased Coulombic scattering.
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Citations
Cites
Electronic properties of two-dimensional systems
Ando, T., Fowler, A. B., & Stern, F. (1982) · Reviews of Modern Physics · doi:10.1103/revmodphys.54.437 · Cited by 7,455
Cited by
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Okamoto, D., Yano, H., Hirata, K., Hatayama, T., & Fuyuki, T. (2010) · IEEE Electron Device Letters · doi:10.1109/led.2010.2047239 · Cited by 309
Metadata
- Authors
- Saks, N. S., & Agarwal, A. K.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2000-11-13
- Volume
- 77
- Issue
- 20
- Pages
- 3281-3283
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2061756481
- Cited by
- 172
- References
- 1
- FWCI
- 5.20
- Type
- journal article
- Language
- en
- Open access
- closed
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- Saks, N. S., & Agarwal, A. K. (2000). Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC. Applied Physics Letters. https://doi.org/10.1063/1.1326046
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