The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide
Abstract
We propose a new technique for fabricating 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with high inversion channel mobility. P atoms were incorporated into the SiO2/4H-SiC (0001) interface by postoxidation annealing using phosphoryl chloride (POCl3). The interface state density near the conduction band edge of 4H-SiC was reduced significantly, and the peak field-effect mobility of lateral 4H-SiC MOSFETs on (0001) Si face was improved to 89 cm2/V · s by POCl3annealing at 1000°C.
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Cites
Physics of Semiconductor Devices
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MOS /metal oxide semiconductor/ physics and technology
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MOS (Metal Oxide Semiconductor) Physics and Technology
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Cited by
A Survey of Wide Bandgap Power Semiconductor Devices
Millán, J., Godignon, P., Perpiñà, X., Pérez-Tomás, A., & Rebollo, J. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2268900 · Cited by 2,685
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
Review and analysis of SiC MOSFETs’ ruggedness and reliability
Wang, J., & Jiang, X. (2020) · IET Power Electronics · doi:10.1049/iet-pel.2019.0587 · Cited by 221
A Critical Review on Reliability and Short Circuit Robustness of Silicon Carbide Power MOSFETs
Sreejith, S., Ajayan, J., Devasenapati, S. B., Sivasankari, B., & Tayal, S. (2023) · Silicon · doi:10.1007/s12633-022-02039-1 · Cited by 11
Metadata
- Authors
- Okamoto, D., Yano, H., Hirata, K., Hatayama, T., & Fuyuki, T.
- Venue
- IEEE Electron Device Letters
- Published
- 2010-07
- Volume
- 31
- Issue
- 7
- Pages
- 710-712
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2113990904
- Cited by
- 309
- References
- 8
- FWCI
- 10.22
- Type
- journal article
- Language
- en
- Open access
- closed
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- Okamoto, D., Yano, H., Hirata, K., Hatayama, T., & Fuyuki, T. (2010). Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide. IEEE Electron Device Letters. https://doi.org/10.1109/led.2010.2047239
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
