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Mechanism of Yellow Luminescence in GaN

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Ogino, Toshio, Aoki, Masaharu·1980·Japanese Journal of Applied Physics

Abstract

The mechanism of the yellow luminescence in GaN has been studied. The yellow band is observed in microcrystals synthesized from Ga and NH 3 by direct reaction, but is not observed in needle-like crystals grown by sublimation-recrystallization. Doping with carbon emphasizes the yellow band. The characteristic excitation band is observed in C-doped GaN. The yellow band is due to a radiative transition from a shallow donor with a depth of 25 meV to a deep acceptor with a depth of 860 meV. The relation between the characteristic excitation band and the emission band is interpreted by the simple configuration coordinate model. The deep acceptor is thought to be a complex consisting of a gallium vacancy and a carbon atom substituted for a nearest neighbour of the gallium sites.

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Metadata

Authors
Ogino, T., & Aoki, M.
Venue
Japanese Journal of Applied Physics
Published
1980-12
Volume
19
Issue
12
Pages
2395-2405
ISSN
  • 0021-4922 (ISSN-L)
  • 1347-4065
OpenAlex
W2027197488
Cited by
686
References
0
FWCI
0.00
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Mechanism of Yellow Luminescence in GaN. https://app.cochat.ai/papers/10.1143/jjap.19.2395
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Ogino, T., & Aoki, M. (1980). Mechanism of Yellow Luminescence in GaN. Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.19.2395

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.