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Mechanism of Yellow Luminescence in GaN
Open accessAbstract
The mechanism of the yellow luminescence in GaN has been studied. The yellow band is observed in microcrystals synthesized from Ga and NH 3 by direct reaction, but is not observed in needle-like crystals grown by sublimation-recrystallization. Doping with carbon emphasizes the yellow band. The characteristic excitation band is observed in C-doped GaN. The yellow band is due to a radiative transition from a shallow donor with a depth of 25 meV to a deep acceptor with a depth of 860 meV. The relation between the characteristic excitation band and the emission band is interpreted by the simple configuration coordinate model. The deep acceptor is thought to be a complex consisting of a gallium vacancy and a carbon atom substituted for a nearest neighbour of the gallium sites.
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Cited by
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Trapping effects in GaN and SiC microwave FETs
Binari, S. C., Klein, P. B., & Kazior, T. E. (2002) · Proceedings of the IEEE · doi:10.1109/jproc.2002.1021569 · Cited by 470
Some effects of oxygen impurities on AlN and GaN
Slack, G. A., Schowalter, L. J., Morelli, D., & Freitas, J. A. (2002) · Journal of Crystal Growth · doi:10.1016/s0022-0248(02)01753-0 · Cited by 415
Klein, P. B., Binari, S. C., Ikossi, K., Wickenden, A. E., Koleske, D. D., & Henry, R. L. (2001) · Applied Physics Letters · doi:10.1063/1.1418452 · Cited by 288
Metadata
- Authors
- Ogino, T., & Aoki, M.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 1980-12
- Volume
- 19
- Issue
- 12
- Pages
- 2395-2405
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2027197488
- Cited by
- 686
- References
- 0
- FWCI
- 0.00
- Type
- journal article
- Language
- en
- Open access
- bronze
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