The DOI matches its Crossref record.
Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
Abstract
The structure of stacking faults formed in forward-biased 4H- and 6H-SiC p–n− diodes was determined using conventional and high-resolution transmission electron microscopy. Typical fault densities were between 103 and 104 cm−1. All observed faults were isolated single-layer Shockley faults bound by partial dislocations with Burgers vector of a/3〈1–100〉-type.
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Citations
Cited by
Material Science and Device Physics in SiC Technology for High-Voltage Power Devices
Kimoto, T. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.040103 · Cited by 1,176
A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
Agarwal, A., Fatima, H., Haney, S., & Ryu, S.-H. (2007) · IEEE Electron Device Letters · doi:10.1109/led.2007.897861 · Cited by 300
AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Farhadi, M., Vankayalapati, B. T., Sajadi, R., & Akin, B. (2023) · IEEE Transactions on Vehicular Technology · doi:10.1109/tvt.2023.3271251 · Cited by 24
Metadata
- Authors
- Liu, J. Q., Skowronski, M., Hallin, C., Söderholm, R., & Lendenmann, H.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2002-02-04
- Volume
- 80
- Issue
- 5
- Pages
- 749-751
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1990374314
- Cited by
- 189
- References
- 0
- FWCI
- 21.03
- Type
- journal article
- Language
- en
- Open access
- closed
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- Liu, J. Q., Skowronski, M., Hallin, C., Söderholm, R., & Lendenmann, H. (2002). Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions. Applied Physics Letters. https://doi.org/10.1063/1.1446212
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